A Self-Powered Broadband Photodetector with High Photocurrent Based on Ferroelectric Thin Film Using Energy Band Structure Design

Xing Gao,Xin Song,Shan Zhang,Xinxiang Yang,Pei Han,Liwen Zhang,Chunxiao Lu,Xihong Hao,Yong Li

DOI: https://doi.org/10.3390/cryst14010079

IF: 2.7

2024-01-14

Crystals

Abstract:Self-powered photodetectors have the advantages of high sensitivity, sustainability, and small size and have become a research hotspot in advanced optoelectronic systems. However, the low output photocurrent density seriously hinders the practical application of ferroelectric self-powered photodetectors. Herein, the high-efficiency photoelectric detection performance of the Bi1-xHoxFeO3 ferroelectric self-powered photodetector is realized by doping Ho. The responsivity (R) and detectivity (D*) can reach 0.0159 A/W and 1.94 × 1011 Jones under monochromatic light with a wavelength of 900 nm. Meanwhile, the R and D* can reach 0.022 A/W and 2.65 × 1011 Jones under sunlight. These excellent photodetection performances are attributed to the high short-circuit current density (Jsc). When the Ho content is 6%, the output photocurrent reaches up to 0.81 mA/cm2. The systematic structure and photo-electric characteristic analysis suggest that the decrease in the band gap leads to the generation of a larger photocurrent while the ferroelectric polarization is reduced slightly. This work provides a new way to obtain high-performance self-powered photodetectors.

materials science, multidisciplinary,crystallography

What problem does this paper attempt to address?

The problem this paper attempts to address is improving the photoelectric performance of ferroelectric self-powered photodetectors, particularly the output photocurrent density. Specifically, the researchers designed a broadband self-powered photodetector with high photocurrent by doping Ho elements into BiFeO₃ (BFO) thin films. The main goal of the study is to enhance the responsivity and detectivity of the photodetector by adjusting the band structure, thereby achieving higher photocurrent density and a broader spectral response range.

### Main Issues
1. **Low Output Photocurrent Density**: Traditional ferroelectric self-powered photodetectors have low output photocurrent density, which severely limits their practical applications.
2. **Improving Photoelectric Performance**: By doping Ho elements, the band structure of BFO thin films is optimized to improve the responsivity and detectivity of the photodetector.

### Solutions
1. **Doping Ho Elements**: By doping Ho elements into BFO thin films, the researchers achieved high-efficiency photoelectric detection performance. When the Ho content is 6%, the output photocurrent density reaches 0.81 mA/cm².
2. **Band Structure Adjustment**: Doping Ho elements leads to a reduction in the band gap, thereby generating a larger photocurrent. Meanwhile, ferroelectric polarization slightly decreases.
3. **Experimental Verification**: The doped films were characterized for structure and performance using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and piezoresponse force microscopy (PFM), verifying the effect of Ho element doping.

### Main Achievements
- **High Responsivity and Detectivity**: Under monochromatic light (wavelength 900 nm), the responsivity (R) and detectivity (D*) reach 0.0159 A/W and 1.94 × 10¹¹ Jones, respectively; under sunlight, R and D* reach 0.022 A/W and 2.65 × 10¹¹ Jones, respectively.
- **Band Structure Analysis**: First-principles calculations confirmed that after doping Ho elements, the band structure of BFO thin films changes, forming intermediate energy levels that allow the films to respond to lower energy photons, extending the light response range to the near-infrared region.

In summary, this study successfully improved the photoelectric performance of ferroelectric self-powered photodetectors by doping Ho elements, providing a new method for developing high-performance self-powered photodetectors.