Abstract:We study disorder induced topological phase transitions in magnetically doped (Bi,Sb)2Te3 thin films by using large scale transport simulations of the conductance through a disordered region coupled to reservoirs in the quantum spin Hall regime. Besides the disorder strength, the rich phase diagram also strongly depends on the magnetic exchange field, the Fermi level, and the initial topological state in the undoped and clean limit of the films. In an initially trivial system at nonzero exchange field, varying the disorder strength can induce a sequence of transitions from a normal insulating to a quantum anomalous Hall, then a spin-Chern insulating, and finally an Anderson insulating state. In contrast, for a system which is initially in the topological phase, a similar sequence can be induced by the disorder, but only starting from the quantum anomalous Hall phase that is also stabilized by the weak disorder. Varying the Fermi level we find a similarly rich phase diagram, including transitions from the quantum anomalous Hall to the spin-Chern insulating state via a state that behaves as a mixture of a quantum anomalous Hall and a metallic state, akin to recent experimental reports.

What problem does this paper attempt to address?

The paper primarily investigates the disorder-induced topological phase transitions in magnetically doped \((\text{Bi}, \text{Sb})_2\text{Te}_3\) thin films. Specifically, the study explores how the disorder strength affects the topological phase transitions in a quantum spin Hall state by coupling a system with a disordered region to reservoirs through large-scale transport simulations. Key points of the paper include: 1. **Types of Disorder**: The study distinguishes between two types of disorder effects—magnetic disorder (which breaks time-reversal symmetry) and non-magnetic disorder (which does not break time-reversal symmetry but leads to spatial inhomogeneity). 2. **Sequence of Topological Phase Transitions**: In an initially trivial system, under a non-zero exchange field, increasing the disorder strength can induce a series of transitions from a normal insulator to a quantum anomalous Hall state, then to a spin Chern insulator, and finally to an Anderson insulator. For a system initially in a topological phase, a similar sequence can be induced by disorder, starting from the quantum anomalous Hall phase. 3. **Fermi Level Changes**: Changing the Fermi level also produces a rich phase diagram, including transitions from the quantum anomalous Hall phase to the spin Chern insulator phase, and a state resembling the recently experimentally reported mixed state of quantum anomalous Hall and metallic states. The study employs tight-binding transport simulations to reveal these topological phase transitions and compares them with the self-consistent Born approximation. These findings not only help in understanding the mechanisms of topological phase transitions in magnetically doped topological insulator thin films but also provide guidance for experimentally distinguishing different scenarios for realizing the quantum anomalous Hall state.

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