Electrical Transport Properties and Spin Injection in $\hbox{Co}_{2}\hbox{FeAl}_{0.5}\hbox{Si}_{0.5}/\hbox{GaAs}$ Junctions

T. Saito,N. Tezuka,S. Sugimoto
DOI: https://doi.org/10.1109/TMAG.2011.2153189
IF: 1.848
2011-09-26
IEEE Transactions on Magnetics
Abstract:We investigated the electrical transport properties in Co<sub>2</sub>FeAl<sub>0.5</sub>Si<sub>0.5</sub> (CFAS)/GaAs junctions. From current density-voltage characteristics, the formation of a Schottky tunnel barrier in the CFAS/GaAs interface was indicated. Moreover, junction resistance of 2×10<sup>-9</sup> Ω·m<sup>2</sup> which is adequate for high magnetoresistance ratio attributable to high spin injection efficiency was obtained. Comparing the bias dependencies of conductance with samples, which CFAS ordering is lower, indicated that <i>L</i>2<sub>1</sub> ordered CFAS contributes to electrical transport. Finally, the spin injection signal was observed with 3-terminal Hanle measurement, and spin relaxation time was estimated to be 380 ps at 5 K.
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