Abstract:Semiconductor laser is one of the most critical components in the field of modern communication. Research and development of single-mode semiconductor laser with high stability, high power, high beam quality and narrow line width is an important research area in this field. In this paper, A novel edge-emitting semiconductor laser diode structure is proposed. In the structure an active multimode interference waveguide structure serves as a main gain region. To modulate the longitudinal mode of the laser, a gain-coupled distributed feedback(DFB) laser based on high order surface gain coupled grating is introduced into the structure as well. The novel structure is then fabricated and compared with an conventional DFB laser. The experimental results show that higher slope efficiency and output power are achieved with the proposed structure than those with the conventional distributed feedback semiconductor lasers. The novel structure is also compared with conventional MMI laser with only Fabry-Parot(FP) cavity. The result shows that the proposed structure has higher beam quality and better stability than the FP cavity multimode interference waveguide lasers. To enhance the gain contrast in the quantum wells without introducing the effective index-coupled effect, the groove length and depth are well designed. Our device provides a single longitudinal mode with the maximum CW output power up to 53.8 mW/facet at 981.21 nm and 400 mA without facet coating, 3 dB linewidth < 13.6 pm, and SMSR > 32 dB. Optical bistable characteristic is observed with a threshold current difference. Meanwhile, by using high-order distribution feedback grating formed by shallow surface etching in the process of chip design and fabrication, the proposed structure of laser diode can realize regrowth freely and only micronscale precision i-line lithography is required. Such a structure with simple fabrication process and low manufacturing cost has great potential for commercial mass production.

Linear polarization and narrow-linewidth external-cavity semiconductor laser based on birefringent Bragg grating optical feedback

High linear polarization, narrow linewidth hybrid semiconductor laser with an external birefringence waveguide Bragg grating

Narrow-linewidth external cavity semiconductor laser based on permanent index modulated grating optical feedback for radiation resistance

Single polarization, narrow linewidth hybrid laser based on selective polarization mode feedback

Ultra-narrow linewidth laser across the C-band using polarization-controlled dual-cavity feedback

A 1-μm-Band Injection-Locked Semiconductor Laser with a High Side-Mode Suppression Ratio and Narrow Linewidth

Narrow Line-Width Ytterbium-Doped Fiber Ring Laser Based on Saturated Absorber

Research Progress of Wide Tunable Bragg Grating External Cavity Semiconductor Lasers

All Polarization Maintaining Brillouin Erbium-Doped Fiber Laser With Sub-kHz Linewidth Using Saturated Absorber and Self-Injection Feedback

Research on Narrow Line Width External Cavity 846 nm Semiconductor Laser

Narrow-linewidth high-efficiency single-frequency ytterbium-doped fiber laser with highly linear polarization at 1064 nm

Practical Multisegment Composite-Cavity Semiconductor Lasers

Single-polarization, switchable dual-wavelength erbium-doped fiber laser with two polarization-maintaining fiber Bragg gratings

Narrow-linewidth Single-Polarization Fiber Laser Using Non-Polarization Optics.

All-polarization-maintaining linear fiber laser mode-locked by nonlinear polarization evolution with phase bias

Sub-kHz Linewidth Fiber Laser via Weak Fiber Bragg Grating Enabled Self-Injection Locking

Design of a Multimode Interference Waveguide Semiconductor Laser Combining Gain Coupled Distributed Feedback Grating

A Compact Low Noise Single Frequency Linearly Polarized DBR Fiber Laser at 1550 nm

Single-frequency pulsed fiber laser based on an electro-optic modulator with injection seeding technique

High power external cavity semiconductor laser

High-power narrow-linewidth diode laser based on external cavity feedback technology for Yb: YAG pumping