Electro-optic and thermoelectric reponse of SiP and SiAs for solar and thermal applications
Mazia Asghar,Hafiza Sumaira Waheed,Aima Shabbir,Hamid Ullah,M. Junaid Iqbal Khan,Faiza Anjum,N.A. Noor,Mohamed A. El-Sheikh,Muhammad Waqas Iqbal
DOI: https://doi.org/10.1088/1402-4896/ad32b8
2024-03-12
Physica Scripta
Abstract:Based on first-principles calculations, we investigated the electro-optic and thermoelectric properties of SiX (X = P, As). We find that the SiAs (-30613.62300 Ry) is more favorable than SiP(-1158.99360 Ry) due to higher optimized energies. The positive phonon spectra confirms the dynamical stability of these materials. The SiP and SiAs exhibited the semiconductor nature with the band gap of 2.33 eV, and 2.04 eV, respectively. Interestingly, the SiP possesses a direct band gap, which could be promising for optoelectronic devices. We find that SiX (X = P, As) showed the electron transition from valance band to conduction band owing towards the strong absorption of sharp band edges. The SiX (X = P, As) compound strongly absorbed light of energy 4.0 eV, which suggests it a potential candidate for solar cell applications. Furthermore, the compound exhibited the strong absorption of whole sun spectrum (ultra-violet to infra-red wave length), makes it capable for the applications in optical devices. Additionally, we have computed the thermoelectric properties using Boltztrap code. We have estimated the zT value 0.67 and 0.76 for SiP and SiAs, respectively. Both the SiAs and SiP exhibits a high zT, which could be applicable in the thermoelectric devices. Based on our calculated results, we anticipate that our studied materials could be an encouraging candidate for optical devices and thermoelectric devices.
physics, multidisciplinary