Caregivers for persons with Alzheimer’s disease

D. Cohen,

DOI: https://doi.org/10.1007/S11920-000-0039-X

2000-02-01

Current Psychiatry Reports

Abstract:

What problem does this paper attempt to address?

Identification of Twist-Angle-dependent Excitons in WS2/WSe2 Heterobilayers

Ke Wu,Hongxia Zhong,Quanbing Guo,Jibo Tang,Jing Zhang,Lihua Qian,Zhifeng Shi,Chendong Zhang,Shengjun Yuan,Shunping Zhang,Hongxing Xu

DOI: https://doi.org/10.1093/nsr/nwab135

IF: 20.6

2021-01-01

National Science Review

Abstract:Abstract Stacking atomically thin films enables artificial construction of van der Waals heterostructures with exotic functionalities such as superconductivity, the quantum Hall effect, and engineered light-matter interactions. In particular, heterobilayers composed of monolayer transition metal dichalcogenides have attracted significant interest due to their controllable interlayer coupling and trapped valley excitons in moiré superlattices. However, the identification of twist-angle-modulated optical transitions in heterobilayers is sometimes controversial since both momentum-direct (K–K) and -indirect excitons reside on the low energy side of the bright exciton in the monolayer constituents. Here, we attribute the optical transition at ∼1.35 eV in the WS2/WSe2 heterobilayer to an indirect Γ–K transition based on a systematic analysis and comparison of experimental photoluminescence spectra with theoretical calculations. The exciton wavefunction obtained by the state-of-the-art GW-Bethe-Salpeter equation approach indicates that both the electron and hole of the excitons are contributed by the WS2 layer. Polarization-resolved k-space imaging further confirms that the transition dipole moment of this optical transition is dominantly in-plane and is independent of the twist angle. The calculated absorption spectrum predicts that the so-called interlayer exciton peak coming from the K–K transition is located at 1.06 eV, but with a much weaker amplitude. Our work provides new insight into the steady-state and dynamic properties of twist-angle-dependent excitons in van der Waals heterostructures.
Exciton Spin Hall Effect In Arc-Shaped Strained WSe$_2$

A. Shubnic,V. Shahnazaryan,I. A. Shelykh,H. Rostami

2024-05-07

Abstract:Generating a pure spin current using electrons, which have degrees of freedom beyond spin, such as electric charge and valley index, presents challenges. In response, we propose a novel mechanism based on intervalley exciton dynamics in {\em arc-shaped} strained transition metal dichalcogenides (TMDs) to achieve the {\em exciton spin Hall effect} in an electrically insulating regime, without the need for an external electric field. The interplay between strain gradients and strain-induced pseudomagnetic fields results in a net Lorentz force on long-lived intervalley excitons in WSe$_2$, carrying non-zero spin angular momentum. This process generates an exciton-mediated pure spin Hall current, resulting in opposite-sign spin accumulations and local magnetization on the two sides of the single-layer arc-shaped TMD. We demonstrate that the magnetic field induced by spin accumulation, at approximately $\sim {\rm mT}$, can be detected using techniques such as superconducting quantum interference magnetometry or spatially-resolved magneto-optical Faraday and Kerr rotations.

Mesoscale and Nanoscale Physics,Materials Science
Light Induced Hall effect in semiconductors with spin-orbit coupling

Xi Dai,Fu-Chun Zhang

DOI: https://doi.org/10.1103/PhysRevB.76.085343

2006-05-06

Abstract:We show that optically excited electrons by a circularly polarized light in a semiconductor with spin-orbit coupling subject to a weak electric field will carry a Hall current transverse to the electric field. This light induced Hall effect is a result of quantum interference of the light and the electric field, and can be viewed as a physical consequence of the spin current induced by the electric field. The light induced Hall conductance is calculated for the p-type GaAs bulk material, and the n-type and p-type quantum well structures.

Mesoscale and Nanoscale Physics
Valley-dependent exciton fine structure and Autler–Townes doublets from Berry phases in monolayer MoSe2

Chaw-Keong Yong,M. Iqbal Bakti Utama,Chin Shen Ong,Ting Cao,Emma C. Regan,Jason Horng,Yuxia Shen,Hui Cai,Kenji Watanabe,Takashi Taniguchi,Sefaattin Tongay,Hui Deng,Alex Zettl,Steven G. Louie,Feng Wang

DOI: https://doi.org/10.1038/s41563-019-0447-8

IF: 41.2

2019-08-05

Nature Materials

Abstract:The Berry phase of Bloch states can have profound effects on electron dynamics<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41563-019-0447-8#ref-CR3">3</a> and lead to novel transport phenomena, such as the anomalous Hall effect and the valley Hall effect<a href="#ref-CR4">4</a>,<a href="#ref-CR5">5</a>,<a href="/articles/s41563-019-0447-8#ref-CR6">6</a>. Recently, it was predicted that the Berry phase effect can also modify the exciton states in transition metal dichalcogenide monolayers, and lift the energy degeneracy of exciton states with opposite angular momentum through an effective valley-orbital coupling<a href="/articles/s41563-019-0447-8#ref-CR1">1</a>,<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="#ref-CR9">9</a>,<a href="#ref-CR10">10</a>,<a href="/articles/s41563-019-0447-8#ref-CR11">11</a>. Here, we report the observation and control of the Berry phase-induced splitting of the 2p exciton states in monolayer molybdenum diselenide (MoSe2) using the intraexciton optical Stark spectroscopy. We observe the time-reversal-symmetric analogue of the orbital Zeeman effect resulting from the valley-dependent Berry phase, which leads to energy difference of +14 (−14) meV between the 2p+ and 2p− exciton states in the K (K′) valley, consistent with the ordering from our ab initio GW-Bethe–Salpeter equation results. In addition, we show that the light–matter coupling between intraexciton states is remarkably strong, leading to a prominent valley-dependent Autler–Townes doublet under resonant driving. Our study opens up pathways to coherently manipulate the quantum states and excitonic excitation with infrared radiation in two-dimensional semiconductors.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Unveiling Ultrafast Spin-Valley Dynamics and Phonon-Mediated Charge Transfer in MoSe$_{2}$/WSe$_{2}$ Heterostructures

Julian Wagner,Robin Bernhardt,Lukas Rieland,Omar Abdul-Aziz,Qiuyang Li,Xiaoyang Zhu,Stefano Dal Conte,Giulio Cerullo,Paul H. M. van Loosdrecht,Hamoon Hedayat

2024-11-21

Abstract:We use helicity-resolved ultrafast transient absorption spectroscopy to study spin-valley polarization dynamics in a vertically stacked MoSe$_{2}$/WSe$_{2}$ heterostructure. The experimental findings reveal details of interlayer charge transfer on ultrafast timescales, showing that the spin-valley polarized state of photoexcited carriers is conserved during the charge transfer and formation of interlayer excitons. Our results confirm that phonon scattering mediates the interlayer charge transfer process, while a high phonon population at elevated temperatures causes a significant decrease in spin-valley selective charge transfer. Moreover, the experimental findings demonstrate the possibility that interlayer excitons and their spin-valley polarization can be probed in the optical response of intralayer excitons. These findings pave the way for ultrafast detection, control, and manipulation of spin-valley polarized excitons in transition metal dichalcogenide-based 2D heterostructures.

Applied Physics,Mesoscale and Nanoscale Physics
Effect of spin-dependent tunneling in a MoSe$_2$/Cr$_2$Ge$_2$Te$_6$ van der Waals heterostructure on exciton and trion emission

Annika Bergmann,Swarup Deb,Veronika Schneidt,Mustafa Hemaid,Kenji Watanabe,Takashi Taniguchi,Rico Schwartz,Tobias Korn

2024-07-16

Abstract:We study van der Waals heterostructures consisting of monolayer MoSe$_2$ and few-layer Cr$_2$Ge$_2$Te$_6$ fully encapsulated in hexagonal Boron Nitride using low-temperature photoluminescence and polar magneto-optic Kerr effect measurements. Photoluminescence characterization reveals a partial quenching and a change of the exciton-trion emission ratio in the heterostructure as compared to the isolated MoSe$_2$ monolayer. Under circularly polarized excitation, we find that the exciton-trion emission ratio depends on the relative orientation of excitation helicity and Cr$_2$Ge$_2$Te$_6$ magnetization, even though the photoluminescence emission itself is unpolarized. This observation hints at an ultrafast, spin-dependent interlayer charge transfer that competes with exciton and trion formation and recombination.

Mesoscale and Nanoscale Physics,Materials Science
Phonon-Mediated Interlayer Charge Separation and Recombination in a MoSe2/WSe2 Heterostructure

Zilong Wang,Patrick Altmann,Christoph Gadermaier,Yating Yang,Wei Li,Lavinia Ghirardini,Chiara Trovatello,Marco Finazzi,Lamberto Duò,Michele Celebrano,Run Long,Deji Akinwande,Oleg V Prezhdo,Giulio Cerullo,Stefano Dal Conte

DOI: https://doi.org/10.1021/acs.nanolett.0c04955

2021-03-10

Abstract:Monolayer transition metal dichalcogenides bear great potential for photodetection and light harvesting due to high absorption coefficients. However, these applications require dissociation of strongly bound photogenerated excitons. The dissociation can be achieved by vertically stacking different monolayers to realize band alignment that favors interlayer charge transfer. In such heterostructures, the reported recombination times vary strongly, and the charge separation and recombination mechanisms remain elusive. We use two color pump-probe microscopy to demonstrate that the charge separation in a MoSe2/WSe2 heterostructure is ultrafast (∼200 fs) and virtually temperature independent, whereas the recombination accelerates strongly with temperature. Ab initio quantum dynamics simulations rationalize the experiments, indicating that the charge separation is temperature-independent because it is barrierless, involves dense acceptor states, and is promoted by higher-frequency out-of-plane vibrations. The strong temperature dependence of the recombination, on the other hand, arises from a transient indirect-to-direct bandgap modulation by low-frequency shear and layer breathing motions.
Excitonic density wave and spin-valley superfluid in bilayer transition metal dichalcogenide

Zhen Bi,Liang Fu

DOI: https://doi.org/10.1038/s41467-020-20802-z

2021-01-28

Abstract:Artificial moiré superlattices in 2d van der Waals heterostructures are a new venue for realizing and controlling correlated electronic phenomena. Recently, twisted bilayer WSe2 emerged as a new robust moiré system hosting a correlated insulator at moiré half-filling over a range of twist angle. In this work, we present a theory of this insulating state as an excitonic density wave due to intervalley electron-hole pairing. We show that exciton condensation is strongly enhanced by a van Hove singularity near the Fermi level. Our theory explains the remarkable sensitivity of the insulating gap to the vertical electric field. In contrast, the gap is weakly reduced by a perpendicular magnetic field, with quadratic dependence at low field. The different responses to electric and magnetic field can be understood in terms of pair-breaking versus non-pair-breaking effects in a BCS analog of the system. We further predict superfluid spin transport in this electrical insulator, which can be detected by optical spin injection and spatial-temporal imaging.
Probing the inter-layer exciton physics in a MoS$_2$/MoSe$_2$/MoS$_2$ van der Waals heterostructure

M. Baranowski,A. Surrente,L. Klopotowski,J. M. Urban,N. Zhang,D. K. Maude,K. Wiwatowski,S. Mackowski,Y. C. Kung,D. Dumcenco,A. Kis,P. Plochocka

DOI: https://doi.org/10.48550/arXiv.1709.04150

2017-09-13

Mesoscale and Nanoscale Physics

Abstract:Stacking atomic monolayers of semiconducting transition metal dichalcogenides (TMDs) has emerged as an effective way to engineer their properties. In principle, the staggered band alignment of TMD heterostructures should result in the formation of inter-layer excitons with long lifetimes and robust valley polarization. However, these features have been observed simultaneously only in MoSe$_2$/WSe$_2$ heterostructures. Here we report on the observation of long lived inter-layer exciton emission in a MoS$_2$/MoSe$_2$/MoS$_2$ trilayer van der Waals heterostructure. The inter-layer nature of the observed transition is confirmed by photoluminescence spectroscopy, as well as by analyzing the temporal, excitation power and temperature dependence of the inter-layer emission peak. The observed complex photoluminescence dynamics suggests the presence of quasi-degenerate momentum-direct and momentum-indirect bandgaps. We show that circularly polarized optical pumping results in long lived valley polarization of inter-layer exciton. Intriguingly, the inter-layer exciton photoluminescence has helicity opposite to the excitation. Our results show that through a careful choice of the TMDs forming the van der Waals heterostructure it is possible to control the circular polarization of the inter-layer exciton emission.
Quantum confined Stark effect in a MoS$_2$ monolayer van der Waals heterostructure

Jonas G. Roch,Nadine Leisgang,Guillaume Froehlicher,Peter Makk,Kenji Watanabe,Takashi Taniguchi,Christian Schönenberger,Richard J. Warburton

DOI: https://doi.org/10.1021/acs.nanolett.7b04553

2017-10-26

Abstract:The optics of dangling-bond-free van der Waals heterostructures containing transition metal dichalcogenides are dominated by excitons. A crucial property of a confined exciton is the quantum confined Stark effect (QCSE). Here, such a heterostructure is used to probe the QCSE by applying a uniform vertical electric field across a molybdenum disulfide (MoS$_2$) monolayer. The photoluminescence emission energies of the neutral and charged excitons shift quadratically with the applied electric field provided the electron density remains constant, demonstrating that the exciton can be polarized. Stark shifts corresponding to about half the homogeneous linewidth were achieved. Neutral and charged exciton polarizabilities of $(7.8~\pm~1.0)\times 10^{-10}~\tr{D~m~V}^{-1}$ and $(6.4~\pm~0.9)\times 10^{-10}~\tr{D~m~V}^{-1}$ at relatively low electron density ($8 \times 10^{11}~\tr{cm}^{-2}$) have been extracted, respectively. These values are one order of magnitude lower than the previously reported values, but in line with theoretical calculations. The methodology presented here is versatile and can be applied to other semiconducting layered materials as well.

Mesoscale and Nanoscale Physics,Optics
Title : Observation of Long-Lived Interlayer Excitons in Monolayer MoSe 2-WSe 2 Heterostructures

Pasqual Rivera,John R. Schaibley,Aaron M. Jones,Jason S. Ross,Sanfeng Wu,Grant Aivazian,Philip Klement,Nirmal J. Ghimire,Jiaqiang Yan,D. G. Mandrus,Wang Yao,Xiaodong Xu

2014-01-01

Abstract:Two-dimensional (2D) materials, such as graphene, boron nitride, and transition metal dichalcogenides (TMDs), have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D monolayers can be stacked together with precise control to form novel van der Waals heterostructures for new functionalities. One highly coveted but yet to be realized heterostructure is that of differing monolayer TMDs with type II band alignment. Their application potential hinges on the fabrication, understanding, and control of bonded monolayers, with bound electrons and holes localized in individual monolayers, i.e. interlayer excitons. Here, we report the first observation of interlayer excitons in monolayer MoSe2-WSe2 heterostructures by both photoluminescence and photoluminescence excitation spectroscopy. The energy and luminescence intensity of interlayer excitons are highly tunable by an applied vertical gate voltage, implying electrical control of the heterojunction band-alignment. Using time resolved photoluminescence, we find that the interlayer exciton is long-lived with a lifetime of about 1.8 ns, an order of magnitude longer than intralayer excitons. Our work demonstrates the ability to optically pump interlayer electric polarization and provokes the immediate exploration of interlayer excitons for condensation phenomena, as well as new applications in 2D light-emitting diodes, lasers, and photovoltaic devices.
Unveiling Ultrafast Spin‐Valley Dynamics and Phonon‐Mediated Charge Transfer in MoSe2/WSe2 Heterostructures

Julian Wagner,Robin Bernhardt,Lukas Rieland,Omar Abdul‐Aziz,Qiuyang Li,Xiaoyang Zhu,Stefano Dal Conte,Giulio Cerullo,Paul H. M. van Loosdrecht,Hamoon Hedayat

DOI: https://doi.org/10.1002/adom.202402703

IF: 9

2024-12-01

Advanced Optical Materials

Abstract:This study reveals the potential to manipulate spin‐valley polarization dynamics in MoSe2/WSe2 heterostructures by quantifying different scattering processes following selective photoexcitation. The results show that these heterostructures enable ultrafast valley‐selective charge transfer, with phonon scattering playing a significant role in the process. After charge transfer, the signatures of interlayer excitons can be observed in the transient absorption response. Helicity‐resolved ultrafast transient absorption spectroscopy is used to study spin‐valley polarization dynamics in a vertically stacked MoSe2/WSe2 heterostructure. The experimental findings reveal details of interlayer charge transfer on ultrafast timescales, showing that the spin‐valley polarized state of photoexcited carriers is conserved during the charge transfer and formation of interlayer excitons. These results confirm that phonon scattering mediates the interlayer charge transfer process, while a high phonon population at elevated temperatures causes a significant decrease in spin‐valley selective charge transfer. Moreover, the experimental findings demonstrate the possibility that interlayer excitons and their spin‐valley polarization can be probed in the optical response of intralayer excitons. These findings pave the way for ultrafast detection, control, and manipulation of spin‐valley polarized excitons in transition metal dichalcogenide‐based 2D heterostructures.

materials science, multidisciplinary,optics
Probing Evolution of Twist-Angle-Dependent Interlayer Excitons in MoSe2/WSe2 van der Waals Heterostructures

Pramoda K Nayak,Yevhen Horbatenko,Seongjoon Ahn,Gwangwoo Kim,Jae-Ung Lee,Kyung Yeol Ma,A-Rang Jang,Hyunseob Lim,Dogyeong Kim,Sunmin Ryu,Hyeonsik Cheong,Noejung Park,Hyeon Suk Shin

DOI: https://doi.org/10.1021/acsnano.7b00640

IF: 17.1

2017-04-25

ACS Nano

Abstract:Interlayer excitons were observed at the heterojunctions in van der Waals heterostructures (vdW HSs). However, it is not known how the excitonic phenomena are affected by the stacking order. Here, we report twist-angle-dependent interlayer excitons in MoSe2/WSe2 vdW HSs based on photoluminescence (PL) and vdW-corrected density functional theory calculations. The PL intensity of the interlayer excitons depends primarily on the twist angle: It is enhanced at coherently stacked angles of 0° and 60° (owing to strong interlayer coupling) but disappears at incoherent intermediate angles. The calculations confirm twist-angle-dependent interlayer coupling: The states at the edges of the valence band exhibit a long tail that stretches over the other layer for coherently stacked angles; however, the states are largely confined in the respective layers for intermediate angles. This interlayer hybridization of the band edge states also correlates with the interlayer separation between MoSe2 and WSe2 layers. Furthermore, the interlayer coupling becomes insignificant, irrespective of twist angles, by the incorporation of a hexagonal boron nitride monolayer between MoSe2 and WSe2.
Interlayer Exciton Transport in MoSe 2 /WSe 2 Heterostructures

Zidong Li,Xiaobo Lu,Darwin F. Cordovilla Leon,Zhengyang Lyu,Hongchao Xie,Jize Hou,Yanzhao Lu,Xiaoyu Guo,Austin Kaczmarek,Takashi Taniguchi,Kenji Watanabe,Liuyan Zhao,Li Yang,Parag B. Deotare

DOI: https://doi.org/10.1021/acsnano.0c08981

IF: 17.1

2021-01-08

ACS Nano

Abstract:A moiré superlattice formed by stacking two lattice mismatched transition metal dichalcogenide monolayers, functions as a diffusion barrier that affects the energy transport and dynamics of interlayer excitons (electron and hole spatially concentrated in different monolayers). In this work, we experimentally quantify the diffusion barrier experienced by interlayer excitons in hexagonal boron nitride-encapsulated molybdenum diselenide/tungsten diselenide (MoSe2/WSe2) heterostructures with different twist angles. We observe the localization of interlayer excitons at low temperature and the temperature-activated diffusivity as a function of twist angle and hence attribute it to the deep periodic potentials arising from the moiré superlattice. We further support the observations with theoretical calculations, Monte Carlo simulations, and a three-level model that represents the exciton dynamics at various temperatures.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Exciton spectroscopy and unidirectional transport in MoSe 2 -WSe 2 lateral heterostructures encapsulated in hexagonal boron nitride

Dorian Beret,Ioannis Paradisanos,Hassan Lamsaadi,Ziyang Gan,Emad Najafidehaghani,Antony George,Tibor Lehnert,Johannes Biskupek,Ute Kaiser,Shivangi Shree,Ana Estrada-Real,Delphine Lagarde,Xavier Marie,Pierre Renucci,Kenji Watanabe,Takashi Taniguchi,Sébastien Weber,Vincent Paillard,Laurent Lombez,Jean-Marie Poumirol,Andrey Turchanin,Bernhard Urbaszek

DOI: https://doi.org/10.1038/s41699-022-00354-0

IF: 10.516

2022-11-20

npj 2D Materials and Applications

Abstract:Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures. Critical for carrier and exciton transport is the material quality and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy of CVD grown MoSe 2 -WSe 2 lateral heterostructures, encapsulated in hBN. Photoluminescence (PL), reflectance contrast and Raman spectroscopy reveal optical transition linewidths similar to high quality exfoliated monolayers, while PL imaging experiments uncover the effective excitonic diffusion length of both materials. The typical extent of the covalently bonded MoSe 2 -WSe 2 heterojunctions is 3 nm measured by scanning transmission electron microscopy (STEM). Tip-enhanced, sub-wavelength optical spectroscopy mapping shows the high quality of the heterojunction which acts as an excitonic diode resulting in unidirectional exciton transfer from WSe 2 to MoSe 2 .

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Evidence for moiré excitons in van der Waals heterostructures

Kha Tran,Galan Moody,Fengcheng Wu,Xiaobo Lu,Junho Choi,Kyounghwan Kim,Amritesh Rai,Daniel A. Sanchez,Jiamin Quan,Akshay Singh,Jacob Embley,André Zepeda,Marshall Campbell,Travis Autry,Takashi Taniguchi,Kenji Watanabe,Nanshu Lu,Sanjay K. Banerjee,Kevin L. Silverman,Suenne Kim,Emanuel Tutuc,Li Yang,Allan H. MacDonald,Xiaoqin Li

DOI: https://doi.org/10.1038/s41586-019-0975-z

IF: 64.8

2019-02-25

Nature

Abstract:Recent advances in the isolation and stacking of monolayers of van der Waals materials have provided approaches for the preparation of quantum materials in the ultimate two-dimensional limit1,2. In van der Waals heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moiré superlattice3. It is widely recognized that the moiré superlattice can modulate the electronic band structure of the material and lead to transport properties such as unconventional superconductivity4 and insulating behaviour driven by correlations5–7; however, the influence of the moiré superlattice on optical properties has not been investigated experimentally. Here we report the observation of multiple interlayer exciton resonances with either positive or negative circularly polarized emission in a molybdenum diselenide/tungsten diselenide (MoSe2/WSe2) heterobilayer with a small twist angle. We attribute these resonances to excitonic ground and excited states confined within the moiré potential. This interpretation is supported by recombination dynamics and by the dependence of these interlayer exciton resonances on twist angle and temperature. These results suggest the feasibility of engineering artificial excitonic crystals using van der Waals heterostructures for nanophotonics and quantum information applications.

multidisciplinary sciences
Interlayer Exciton in Multilayer-Monolayer Van Der Waals Heterostructures

Qinghai Tan,Abdullah Rasmita,Zumeng Huang,Sheng Liu,Qihua Xiong,Changyou Gao,Wei-bo

2019-01-01

Abstract:Interlayer excitons are tightly bounded electron and hole pairs in heterostructures with electrons and holes residing in different layers. They have a long lifetime, making them a promising platform for exploiting many-body interactions. However, the current research is mostly focused on monolayer-monolayer heterostructures. Here, we observed the photoluminescence from multilayer WSe2/monolayer MoS2 heterostructures. We found that the temperature dependence of the interlayer exciton photoluminescence intensity, lifetime, and peak energy depends on the number of the WSe2 layers. By comparing the optical transition energies in monolayer-monolayer and multilayer-monolayer heterostructures, we can extract the valence band shift of multilayer WSe2, which is otherwise only possible with sophisticated methods such as angle-resolved photoemission spectroscopy (ARPES). These findings expand our understanding of the interlayer excitons and bandgap engineering with the layer degree of freedom.
Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures

Pasqual Rivera,John R. Schaibley,Aaron M. Jones,Jason S. Ross,Sanfeng Wu,Grant Aivazian,Philip Klement,Nirmal J. Ghimire,Jiaqiang Yan,D. G. Mandrus,Wang Yao,Xiaodong Xu

DOI: https://doi.org/10.1038/ncomms7242

2014-03-20

Abstract:Two-dimensional (2D) materials, such as graphene1, boron nitride2, and transition metal dichalcogenides (TMDs)3-5, have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D monolayers can be stacked together with precise control to form novel van der Waals heterostructures for new functionalities2,6-9. One highly coveted but yet to be realized heterostructure is that of differing monolayer TMDs with type II band alignment10-12. Their application potential hinges on the fabrication, understanding, and control of bonded monolayers, with bound electrons and holes localized in individual monolayers, i.e. interlayer excitons. Here, we report the first observation of interlayer excitons in monolayer MoSe2-WSe2 heterostructures by both photoluminescence and photoluminescence excitation spectroscopy. The energy and luminescence intensity of interlayer excitons are highly tunable by an applied vertical gate voltage, implying electrical control of the heterojunction band-alignment. Using time resolved photoluminescence, we find that the interlayer exciton is long-lived with a lifetime of about 1.8 ns, an order of magnitude longer than intralayer excitons13-16. Our work demonstrates the ability to optically pump interlayer electric polarization and provokes the immediate exploration of interlayer excitons for condensation phenomena, as well as new applications in 2D light-emitting diodes, lasers, and photovoltaic devices.

Mesoscale and Nanoscale Physics,Materials Science
Signatures of Electric Field and Layer Separation Effects on the Spin-Valley Physics of MoSe2/WSe2 Heterobilayers: From Energy Bands to Dipolar Excitons

Paulo E Faria Junior,Jaroslav Fabian

DOI: https://doi.org/10.3390/nano13071187

2023-03-27

Abstract:Multilayered van der Waals heterostructures based on transition metal dichalcogenides are suitable platforms on which to study interlayer (dipolar) excitons, in which electrons and holes are localized in different layers. Interestingly, these excitonic complexes exhibit pronounced valley Zeeman signatures, but how their spin-valley physics can be further altered due to external parameters-such as electric field and interlayer separation-remains largely unexplored. Here, we perform a systematic analysis of the spin-valley physics in MoSe2/WSe2 heterobilayers under the influence of an external electric field and changes of the interlayer separation. In particular, we analyze the spin (Sz) and orbital (Lz) degrees of freedom, and the symmetry properties of the relevant band edges (at K, Q, and Γ points) of high-symmetry stackings at 0° (R-type) and 60° (H-type) angles-the important building blocks present in moiré or atomically reconstructed structures. We reveal distinct hybridization signatures on the spin and the orbital degrees of freedom of low-energy bands, due to the wave function mixing between the layers, which are stacking-dependent, and can be further modified by electric field and interlayer distance variation. We find that H-type stackings favor large changes in the g-factors as a function of the electric field, e.g., from -5 to 3 in the valence bands of the Hhh stacking, because of the opposite orientation of Sz and Lz of the individual monolayers. For the low-energy dipolar excitons (direct and indirect in k-space), we quantify the electric dipole moments and polarizabilities, reflecting the layer delocalization of the constituent bands. Furthermore, our results show that direct dipolar excitons carry a robust valley Zeeman effect nearly independent of the electric field, but tunable by the interlayer distance, which can be rendered experimentally accessible via applied external pressure. For the momentum-indirect dipolar excitons, our symmetry analysis indicates that phonon-mediated optical processes can easily take place. In particular, for the indirect excitons with conduction bands at the Q point for H-type stackings, we find marked variations of the valley Zeeman (∼4) as a function of the electric field, which notably stands out from the other dipolar exciton species. Our analysis suggests that stronger signatures of the coupled spin-valley physics are favored in H-type stackings, which can be experimentally investigated in samples with twist angle close to 60°. In summary, our study provides fundamental microscopic insights into the spin-valley physics of van der Waals heterostructures, which are relevant to understanding the valley Zeeman splitting of dipolar excitonic complexes, and also intralayer excitons.
Direct visualization of hybrid excitons in van der Waals heterostructures

Giuseppe Meneghini,Marcel Reutzel,Stefan Mathias,Samuel Brem,Ermin Malic

DOI: https://doi.org/10.1021/acsphotonics.3c00599

2023-05-05

Abstract:Van der Waals heterostructures show fascinating physics including trapped moire exciton states, anomalous moire exciton transport, generalized Wigner crystals, etc. Bilayers of transition metal dichalcogenides (TMDs) are characterized by long-lived spatially separated interlayer excitons. Provided a strong interlayer tunneling, hybrid exciton states consisting of interlayer and intralayer excitons can be formed. Here, electrons and/or holes are in a superposition of both layers. Although crucial for optics, dynamics, and transport, hybrid excitons are usually optically inactive and have therefore not been directly observed yet. Based on a microscopic and material-specific theory, we show that time- and angle-resolved photoemission spectroscopy (tr-ARPES) is the ideal technique to directly visualize these hybrid excitons. Concretely, we predict a characteristic double-peak ARPES signal arising from the hybridized hole in the MoS$_2$ homobilayer. The relative intensity is proportional to the quantum mixture of the two hybrid valence bands at the $\Gamma$ point. Due to the strong hybridization, the peak separation of more than 0.5 eV can be resolved in ARPES experiments. Our study provides a concrete recipe of how to directly visualize hybrid excitons and how to distinguish them from the usually observed regular excitonic signatures.

Mesoscale and Nanoscale Physics

Caregivers for persons with Alzheimer’s disease

Identification of Twist-Angle-dependent Excitons in WS2/WSe2 Heterobilayers

Exciton Spin Hall Effect In Arc-Shaped Strained WSe$_2$

Light Induced Hall effect in semiconductors with spin-orbit coupling

Valley-dependent exciton fine structure and Autler–Townes doublets from Berry phases in monolayer MoSe2

Unveiling Ultrafast Spin-Valley Dynamics and Phonon-Mediated Charge Transfer in MoSe$_{2}$/WSe$_{2}$ Heterostructures

Effect of spin-dependent tunneling in a MoSe$_2$/Cr$_2$Ge$_2$Te$_6$ van der Waals heterostructure on exciton and trion emission

Phonon-Mediated Interlayer Charge Separation and Recombination in a MoSe2/WSe2 Heterostructure

Excitonic density wave and spin-valley superfluid in bilayer transition metal dichalcogenide

Probing the inter-layer exciton physics in a MoS$_2$/MoSe$_2$/MoS$_2$ van der Waals heterostructure

Quantum confined Stark effect in a MoS$_2$ monolayer van der Waals heterostructure

Title : Observation of Long-Lived Interlayer Excitons in Monolayer MoSe 2-WSe 2 Heterostructures

Unveiling Ultrafast Spin‐Valley Dynamics and Phonon‐Mediated Charge Transfer in MoSe2/WSe2 Heterostructures

Probing Evolution of Twist-Angle-Dependent Interlayer Excitons in MoSe2/WSe2 van der Waals Heterostructures

Interlayer Exciton Transport in MoSe 2 /WSe 2 Heterostructures

Exciton spectroscopy and unidirectional transport in MoSe 2 -WSe 2 lateral heterostructures encapsulated in hexagonal boron nitride

Evidence for moiré excitons in van der Waals heterostructures

Interlayer Exciton in Multilayer-Monolayer Van Der Waals Heterostructures

Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures

Signatures of Electric Field and Layer Separation Effects on the Spin-Valley Physics of MoSe2/WSe2 Heterobilayers: From Energy Bands to Dipolar Excitons

Direct visualization of hybrid excitons in van der Waals heterostructures