Preparation of tungsten-doped zinc oxide thin films by co-sputtering for micro-gas sensing devices

Yu-Jen Hsiao,Yempati Nagarjuna,Guo-Yu Huang,Meichun Lin
DOI: https://doi.org/10.1016/j.jallcom.2023.170567
IF: 6.2
2023-05-27
Journal of Alloys and Compounds
Abstract:Synthesis of a good nanostructure is a vital part in regards to achieving proper gas sensing characteristics. In this study, Tungsten (W) doped ZnO nanostructure is synthesized on micro electro mechanical systems (MEMS) device by co-sputtering process. Appropriate doping concentration to the sensing material is crucial for sensing properties, therefore, 5 different doping concentrations ranging from 0% W to 4% W to the ZnO structure are developed. The structural properties of all the W doped ZnO samples were characterized by Scanning electron microscope (SEM), X-Ray diffraction (XRD) analysis and Energy-dispersive X-ray spectroscopy (EDS) analysis. Sensing properties were calculated with different concentrations of H 2 gas ranging from 20 ppm to 100 ppm. All of the W doped ZnO sensors were tested for H 2 gas at working temperatures varying from 100 °C to 300 °C to detect the optimal doping concentration and optimal working temperature. At 150 °C, 3% W doped ZnO revealed 67% gas sensing response for 100 ppm H 2 gas. Selectivity test with 5 different gases displayed that W doped ZnO sensor has good selectivity over H 2 gas at 150 °C.
materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
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