Semiconductor Contact‐Electrification‐Dominated Tribovoltaic Effect for Ultrahigh Power Generation

Zhi Zhang,Zhaozheng Wang,Yunkang Chen,Yuan Feng,Sicheng Dong,Han Zhou,Zhong Lin Wang,Chi Zhang

DOI: https://doi.org/10.1002/adma.202200146

IF: 29.4

2022-04-18

Advanced Materials

Abstract:Advanced Materials, Accepted Article.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

What problem does this paper attempt to address?

Durable Flexible Direct Current Generation through the Tribovoltaic Effect at Contact-Separation Mode

Jia Meng,Chongxiang Pan,Longwei Li,Zi Hao Guo,Fan Xu,Luyao Jia,Zhong Lin Wang,Xiong Pu

DOI: https://doi.org/10.1039/d2ee02762c

2022-10-13

Energy and Environmental Sciences

Abstract:The tribovoltaic effect at the dynamic semiconductor interfaces has been an emerging hot topic due to its potential impact in energy harvesting and smart electronics. Previously, this effect is mainly studied based on the sliding mode and is undesirably accompanied with abrasion issue. Herein, we demonstrate the tribovoltaic effect based on contact-separation motion of dynamic Schottky interface, and achieve durable, flexible and high-performance direct-current electricity generation. The generator is designed based on the flexible organic semiconductor, achieving high current density of 16.00 A m-2, charge density of 98.72 mC m-2, and peak power density up to 5.40 W m-2 at contact-separation mode. Most importantly, long-term durability is demonstrated without performance degradation in 20,000 cycles, as the undesirable abrasion at sliding mode is avoided. Furthermore, the investigation on tribovoltaic effect at contact-separation mode helps achieve better mechanism understanding, that the contact-induced "bindington" is more likely to provide the energy for electron excitation. Therefore, this study presents both practical and fundamental insights for tribovoltaic devices.

energy & fuels,chemistry, multidisciplinary,engineering, chemical,environmental sciences
Study of interfacial design for direct-current tribovoltaic generators

Xiyan Xu,Jun Li,Xinglin Tao,Qi Yan,Han Wu,Zhengxin Guan,Liqiang Liu,Xiangyu Chen,Wei Ou-Yang

DOI: https://doi.org/10.1016/j.nanoen.2022.106957

IF: 17.6

2022-04-01

Nano Energy

Abstract:As a newly discovered physical phenomenon, tribovoltaic effect has potential applications in various fields. Herein, we systematically study the relationship between interfacial properties of the tribovoltaic generator and its output performance using a conductor-semiconductor (C-S) structure. Based on several similar physical models, we derive an equation to quantify the effects of contact area, load force and the density of surface states of the semiconductor on performance of the tribovoltaic generator. The experimental results are in good agreements with the theoretical analysis. Moreover, the contribution of interfacial electric field and interfacial magnetic field to the tribovoltaic effect are discussed, respectively. By using epitaxial silicon (Si) film, the built-in electric field near the C-S interface can be regulated, which leads to suppression of the recombination effect of the tribovoltaic charges, and the short-circuit current of the tribovoltaic generator can be increased by 66.83%. This work paves the way for electrode design and better output performance of flexible DC tribovoltaic generator in the future.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Tribovoltaic Effect on Metal–Semiconductor Interface for Direct‐Current Low‐Impedance Triboelectric Nanogenerators

Zhi Zhang,Dongdong Jiang,Junqing Zhao,Guoxu Liu,Tianzhao Bu,Chi Zhang,Zhong Lin Wang

DOI: https://doi.org/10.1002/aenm.201903713

IF: 27.8

2020-01-30

Advanced Energy Materials

Abstract:The triboelectric nanogenerator (TENG) is a new energy technology that is enabled by coupled contact electrification and electrostatic induction. The conventional TENGs are usually based on organic polymer insulator materials, which have the limitations and disadvantages of high impedance and alternating output current. Here, a tribovoltaic effect based metal–semiconductor direct‐current triboelectric nanogenerator (MSDC‐TENG) is reported. The tribovoltaic effect is facilitated by direct voltage and current by rubbing a metal/semiconductor on another semiconductor. The frictional energy released by the forming atomic bonds excites nonequilibrium carriers, which are directionally separated to form a current under the built‐in electric field. The continuous average open‐circuit voltage (10–20 mV), short‐circuit direct‐current output (10–20 µA), and low impedance characteristic (0.55–5 kΩ) of the MSDC‐TENG can be observed during relative sliding of the metal and silicon. The working parameters are systematically studied for electric output and impedance characteristics. The results reveal that faster velocity, larger pressure, and smaller area can improve the maximum power density. The internal resistance is mainly determined by the velocity and the electrical resistance of semiconductor. This work not only expands the material candidates of TENGs from organic polymers to semiconductors, but also demonstrates a tribovoltaic effect based electric energy conversion mechanism.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Tribovoltaic Effect Promotes Highly Efficient Direct-Current Generator

Xin Pan,Huijing Xiang,Ziwei Xuan,Jie Yang,Xia Cao

DOI: https://doi.org/10.1039/d3ta04807a

IF: 11.9

2023-10-11

Journal of Materials Chemistry A

Abstract:Currently, extremely high voltage output has been achieved by direct current triboelectric nanogenerator (DC-TENG) on the base of semiconductor-semiconductor interfaces. DC-TENGs that are based on metal-semiconductor interfaces are highly anticipated due to the potential advantages such as low cost, simpler structures, lower internal resistance and wide selection of materials. Here, we propose the design of DC-TENGs based on a metal-polymer-semiconductor interface and a dynamic Al/PVP/Si heterojunction, which produces a peak voltage of 26 V and exhibits a 5-fold improvement over the reported Schottky DC-TENGs, because the polyvinylpyrrolidone greatly increases the surface state density of silicon. During the reciprocating friction of the aluminum foil on the silicon substrate, the internal junction current generated by the directional movement of non-equilibrium carriers induced by friction always flows from Al to silicon, independent of the type of silicon, thus can be used in self-powered electronic devices for continuously converting mechanical energy into electrical energy. Moreover, by introducing conventional dielectric polymer materials, it can be prepared as a dual-mode TENG for application in self-powered sensing. Our work presents for the first time the tribovoltaic effect at the metal-polymer-semiconductor interface, which may inspire further research on Schottky DC-TENGs and accelerate the practical application for self-powered systems.

materials science, multidisciplinary,chemistry, physical,energy & fuels
A United Triboelectrification Mechanism for Contacts between All Types of Materials

Haobin Wang,Shuyi Huang,Haoze Kuang,Chi Zhang,Yulu Liu,Kaihang Zhang,Xinyu Cai,Xiaozhi Wang,Jikui Luo,Zhong Lin Wang

DOI: https://doi.org/10.1002/aenm.202300529

IF: 27.8

2023-04-23

Advanced Energy Materials

Abstract:Here a united triboelectrification model for all kinds of possible material combinations for contact–separation mode triboelectric nanogenerator is reported, showing that triboelectrification is a charge exchange process between the surfaces of two friction materials, and its output is the combined effects of the electrostatic induction and dynamic junction modulation. Triboelectrification for contacts between three types of materials—metals, polymers, and semiconductors—are investigated. The results show that triboelectrification is a charge exchange process between the surfaces of two friction materials, and its output is the synergetic effects of the electrostatic induction (ESI) and dynamic junction modulation (DJM). There are four current/voltage peaks in output of triboelectrification: two of them are attributed to the ESI effect and determined by the surface state densities and electron affinity difference of the materials, while the other two are associated with the DJM effect and determined by the charging exchange between the surface states and the depletion region. However, metals and polymers have no‐modulation of depletion region due to their high conductivity and insulating nature, respectively, thus only two peaks induced by the ESI effect are observable no matter what types of metals and polymers are in pair for contacting. Semiconductors have a depletion region, there will be two more output current/voltage peaks induced by the junction modulation when a semiconductor is in contact with any type of materials. The observations reveal a universal triboelectrification mechanism for contacts between materials, and provide an intuitive guidance for the development of high‐performance triboelectric nanogenerators.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Coexistence of Contact Electrification and Dynamic p-n Junction Modulation Effects in Triboelectrification.

Haobin Wang,Shuyi Huang,Haoze Kuang,Taoyu Zou,Pandey Rajagopalan,Xiaozhi Wang,Yubo Li,Hao Jin,Shurong Dong,Hang Zhou,Tawfique Hasan,Luigi G Occhipinti,Jong Min Kim,Jikui Luo

DOI: https://doi.org/10.1021/acsami.2c06374

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:The triboelectric effect occurs when two dissimilar materials are in physical contact, attributed to the combination of contact electrification (CE) and electrostatic induction. It has been extensively explored for the development of high-performance triboelectric nanogenerators (TENGs). In this paper, we report on, besides the CE-related charge generation, an additional charge generation phenomenon associated with the modulation of the p-n junction when two semiconductor materials [methylammonium lead iodide (MAPI) and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)] are put in contact and separated dynamically. The electrical outputs generated by the CE effect are determined by the surface potential difference between the two friction materials, while the ones induced by the p-n junction modulation are determined by the dynamic variations in the depletion widths of the two semiconductor friction materials. The outputs generated by the CE effect and the p-n junction effect are well separated in time scale; the p-n junction modulation contributes ∼20% of the total charge generated and could be varied by changing the chemical composition of the semiconductors. The results may provide an alternative method for the development of high-performance TENGs by utilizing this additional p-n junction modulation effect.
Tribological-behaviour-controlled direct-current triboelectric nanogenerator based on the tribovoltaic effect under high contact pressure

Di Yang,Liqiang Zhang,Ning Luo,Ying Liu,Weixiang Sun,Jialiang Peng,Min Feng,Yange Feng,Haifeng Wang,Daoai Wang

DOI: https://doi.org/10.1016/j.nanoen.2022.107370

IF: 17.6

2022-08-01

Nano Energy

Abstract:Dynamic metal–semiconductor Schottky contact interfaces suffer from wear even in low-friction direct-current triboelectric nanogenerators (DC-TENGs), which may affect their working stability and limit their practical applications. In this study, the mechanism and relationship between triboelectrification and tribological characteristics of the metal–semiconductor heterojunction interface with a ball-on-flat configuration under a high contact pressure were systematically studied to simultaneously obtain the high triboelectric output and low wear rate of the tribological-behaviour-controlled DC TENG (TCDC-TENG). The working mechanism of the TCDC-TENG could be attributed to the tribovoltaic effect. An increased normal load and sliding frequency enhanced the triboelectric output while increasing the wear loss of the TCDC-TENG. Furthermore, both the triboelectric output and wear loss per unit time increased with the increase in the applied friction power, which was a product of the coefficient of friction (CoF), normal load (FN), and sliding speed (v). By adding polyalphaolefin SpectraSyn 4 as a lubricant, the CoF was lowered from 0.76 to 0.16, and the wear loss considerably decreased by 99.5% after 20,000 cycles of reciprocating sliding, while maintaining almost constant DC output voltage. This study not only presents the strong correlation between triboelectrification and tribology characteristics based on the tribovoltaic effect but also provides a new strategy for the semiconductor-based DC-TENGs for achieving a stable DC triboelectric output and wear resistance.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Tribotronics: an Emerging Field by Coupling Triboelectricity and Semiconductors

Chi Zhang,Junqing Zhao,Zhi Zhang,Tianzhao Bu,Guoxu Liu,Xianpeng Fu

DOI: https://doi.org/10.1088/2631-7990/ace669

2023-07-13

International Journal of Extreme Manufacturing

Abstract:Tribotronics has been an emerging research field by coupling triboelectricity and semiconductor. Here, three branches of the tribotronics are summarized and reviewed. First, the tribovoltaic effect is introduced as a phenomenon of direct current power generation by mechanical friction on the semiconductor interface, which has great advantage of high power density over traditional insulator-based TENGs. Second, the triboelectric modulation is elaborated by using the triboelectric potential on field effect transistors, which has demonstrated the active mechanosensation and nano-scale tactile perception. In addition, the triboelectric management is presented for improving the energy supply efficiency based on semiconductor device technology, which can provide an effective microenergy solution for sensors and microsystems. For the interactions between triboelectricity and semiconductors, the research of tribotronics has exhibited the electronics of interfacial friction systems, and the triboelectric technology by electronics. This review has shown the prospects of tribotronics for developing new functional devices and self-powered microsystems for intelligent manufacturing, robotic sensing and industrial Internet of Things.

engineering, manufacturing,materials science, multidisciplinary
Tribovoltaic Effect: Origin, Interface, Characteristic, Mechanism & Application

Zhi Zhang,Likun Gong,Ruifei Luan,Yuan Feng,Jie Cao,Chi Zhang

DOI: https://doi.org/10.1002/advs.202305460

Abstract:Tribovoltaic effect is a phenomenon of the generation of direct voltage and current by the mechanical friction on semiconductor interface, which exhibits a brand-new energy conversion mechanism by the coupling of semiconductor and triboelectrification. Here, the origin, interfaces, characteristics, mechanism, coupling effect and application of the tribovoltaic effect is summarized and reviewed. The tribovoltaic effect is first proposed in 2019, which has developed in various forms tribovoltaic nanogenerator (TVNG) including metal-semiconductor, metal-insulator-semiconductor, semiconductor-semiconductor, liquid-solid and flexible interfaces. Compared with triboelectric nanogenerator, the TVNG has the characteristics of direct-current, high current density (mA-A cm-2) and low impedance (Ω-kΩ). The two mainstream views on the tribovoltaic generation mechanism, one dominated by built-in electric fields and the other dominated by interface electric fields, have been elaborated and summarized in detail. The tribo-photovoltaic effect and tribo-thermoelectric effect are also discovered and introduced because they can easily interact with other multi-physical field effects. The TVNGs are suitable for making energy harvesting and self-powered sensing devices for micro-nano energy applications. This paper not only revisit the development of the tribovoltaic effect, but also makes prospects for mechanism research, device fabrication and integrated application, which can accelerate the evolution of smart wearable electronics and intelligent industrial components.
Surface States Enhanced Dynamic Schottky Diode Generator with Extremely High Power Density over 1000 W M−2

Shisheng Lin,Runjiang Shen,Tianyi Yao,Yanghua Lu,Sirui Feng,Zhenzhen Hao,Haonan Zheng,Yanfei Yan,Erping Li

DOI: https://doi.org/10.1002/advs.201901925

IF: 15.1

2019-01-01

Advanced Science

Abstract:Abstract The overloaded energy cost has become the main concern of the now fast developing society, which make novel energy devices with high power density of critical importance to the sustainable development of human society. Herein, a dynamic Schottky diode based generator with ultrahigh power density of 1262.0 W m−2 for sliding Fe tip on rough p‐type silicon is reported. Intriguingly, the increased surface states after rough treatment lead to an extremely enhanced current density up to 2.7 × 105 A m−2, as the charged surface states can effectively accelerate the carriers through large atomic electric field, while the reflecting directions are regulated by the built‐in electric field of the Schottky barrier. This research provides an open avenue for utilizing the surface states in semiconductors in a subversive way, which can co‐utilize the atomic electric field and built‐in electric field to harvest energy from the mechanical movements, especially for achieving an ultrahigh current density power source.
Achieving an ultrahigh direct-current voltage of 130 V by semiconductor heterojunction power generation based on the tribovoltaic effect

Zhaozheng Wang,Zhi Zhang,Yunkang Chen,Likun Gong,Sicheng Dong,Han Zhou,Yuan Lin,Yi Lv,Guoxu Liu,Chi Zhang

DOI: https://doi.org/10.1039/d2ee00180b

2022-01-01

Abstract:A semiconductor DC triboelectric nanogenerator (SDC-TENG) with ultrahigh DC voltage and power density using the GaN/Si heterojunction, the maximum DC voltage is up to 130 V, which set a voltage record for the tribovoltaic effect.

energy & fuels,chemistry, multidisciplinary,engineering, chemical,environmental sciences
Dipole-moment-induced Effect on Contact Electrification for Triboelectric Nanogenerators

Peng Bai,Guang Zhu,Yu Sheng Zhou,Sihong Wang,Jusheng Ma,Gong Zhang,Zhong Lin Wang

DOI: https://doi.org/10.1007/s12274-014-0461-8

IF: 9.9

2014-01-01

Nano Research

Abstract:Triboelectric nanogenerators (TENGs) have been demonstrated as an effective way to harvest mechanical energy to drive small electronics. The density of triboelectric charges generated on contact surfaces between two distinct materials is a critical factor for dictating the output power. We demonstrate an approach to effectively tune the triboelectric properties of materials by taking advantage of the dipole moment in polarized polyvinylidene fluoride (PVDF), leading to substantial enhancement of the output power density of the TENG. The output voltage ranged from 72 V to 215 V under a constant contact force of 50 N. This work not only provides a new method of enhancing output power of TENGs, but also offers an insight into charge transfer in contact electrification by investigating dipole-moment-induced effects on the electrical output of TENGs.
Sustained Electron Tunneling at Unbiased Metal-Insulator-semiconductor Triboelectric Contacts

Jun Liu,Mengmeng Miao,Keren Jiang,Faheem Khan,Ankur Goswami,Ryan McGee,Zhi Li,Lan Nguyen,Zhiyu Hu,Jungchul Lee,Ken Cadien,Thomas Thundat

DOI: https://doi.org/10.1016/j.nanoen.2018.03.068

IF: 17.6

2018-01-01

Nano Energy

Abstract:Generating sufficient current density for powering electronic devices remains as one of the critical challenges of mechanical energy harvesting techniques based on piezo and triboelectricity, mainly due to the high impedance of the insulating material systems. Here we report on producing sustainable tunneling current using an unbiased, triboelectrically charged metal-insulator-semiconductor (MIS) point contact system, consisting of p-type silicon, silicon oxide and a metal tip. The native thin oxide (similar to 1.6 nm) on the silicon surface provides a natural pathway for quantum mechanical tunneling of the triboelectrically generated electrons into the silicon substrate. Lateral back and forth sliding motion of the tip, irrespective of the direction of motion, generates a constant direct current (d.c.) with very high current density. The measured current shows an exponential decay with the thickness of oxide layer deposited with atomic layer deposition (ALD), confirming the quantum mechanical tunneling mechanism. It is proposed that the contact potential difference enhanced by triboelectric charging provides potential difference between metal point contact and the substrate. With single metallic micro probe sliding on a moderately doped p-type silicon, an open circuit voltage (V-oc) of 300-400 mV and a short-circuit direct current (I-sc) of 3-5 mu A (a corresponding high current density, J, in the order of 1-10 A/m(2)) have been observed. It is predicted from conductive-atomic force microscopy (C-AFM) experiment that the theoretical J can be as high as 104 A/m(2). This new concept has the potential as a green energy harvesting technique where a broad range of material candidates and device configurations could be used.
Mechanism of In-Plane and Out-of-Plane Tribovoltaic Direct-Current Transport with a Metal/Oxide/Metal Dynamic Heterojunction

Matthew Benner,Ruizhe Yang,Leqi Lin,Maomao Liu,Huamin Li,Jun Liu

DOI: https://doi.org/10.1021/acsami.1c22438

2022-01-06

Abstract:Interfacial layer engineering has been demonstrated as an effective strategy for boosting power output in semiconductor-based dynamic direct-current (DC) generators, although the underlying mechanism of power enhancement remains obscure. Here, such ambiguity has been elucidated by comparing fundamental tribovoltaic DC output characteristics of prototypical metal-oxide-metal heterojunctions prepared by atomic-layer deposition (ALD) with a vertical (out-of-plane carrier transport through the interfacial layer) and a horizontal (in-plane carrier transport along the interfacial layer) configuration such that the influences from nonequilibrium electronic excitation and interfacial capacitive amplification can be individually tuned and investigated. It is found in the case of Al/TiO2/Ti vertical configurations that the open-circuit voltage (VOC) increases linearly from -0.03 to -0.52 V as the thickness of titanium oxide (tTiO2) increases from 0 to 200 nm with a linear amplification coefficient of -2.31 mV nm-1, which is validated by a parallel-capacitor theoretical model with tribovoltaic electronic excitation. In contrast, the VOC output with the horizontal configuration is ∼55 mV, where the potential difference is merely associated with the accumulation of surface charges and the subsequent charge rearrangement in the depletion region. Meanwhile, it is measured that the short-circuit current density (JSC) shows an initial increasing trend when tTiO2 increases, reaches its peak value at 0.21 A m-2 at tTiO2 = 20 nm, and then decreases as tTiO2 increases further. From current-voltage (I-V) characterization, it is proposed that such DC output variation with an optimal interfacial layer thickness stems from the competition of amplified voltage and increased resistance with increasing interfacial layer thickness, with the main charge transport mechanism switching from quantum tunneling to thermionic emission/trap-assisted transport. In contrast, tribovoltaic excitation is proven to be significantly weaker when a wide band-gap insulator (Al2O3) is involved. The elucidation of the fundamental mechanism of power enhancement by the interfacial layer in this work is of great significance in providing instructional direction for the development and optimization of high-performance DC nanogenerators.

materials science, multidisciplinary,nanoscience & nanotechnology
On the Contact Electrification Mechanism in Semiconductor-Semiconductor Case by Vertical Contact-Separation Triboelectric Nanogenerator

Yue He,Jia Tian,Wenbo Peng,Danyang Huang,Fangpei Li,Yong Ning He

DOI: https://doi.org/10.1088/1361-6528/accde5

IF: 3.5

2023-04-19

Nanotechnology

Abstract:With the speed of industrialization accelerating, the traditional energy is in the predicament of being exhausted. Humans urgently need a clean energy to maintain the peace and development. Triboelectric nanogenerator (TENG) is a tiny device that collects and converts the renewable energy, such as wind, vibration and tidal/blue energy, into electrical energy. As the most significant working principle of TENG, contact electrification (CE) has been broadly studied since it was documented thousands of years ago. A large number of related researches are reported. However, most of them are focused on the polymer materials, device structures and potential applications. There are few literatures about the mechanism of CE, especially in the semiconductor-semiconductor case. Semiconductor-semiconductor CE is a promising method to generate electricity, which has been used in many fields, such as the photodetector and displacement sensor. Therefore, it is necessary to establish a serious and detailed theory in order to deeply explain the underlying mechanisms of semiconductor-semiconductor CE. In this work, a novel Fermi level model based on energy band theory is proposed to illustrate the semiconductor-semiconductor CE mechanism. By assembling a ZnO/Si vertical contact-separation (CS) mode TENG, the charge transfer introduced by CE is systematically measured. According to the energy band theory and TENG governing equation, the experimental data is qualitatively and quantitatively analyzed. Moreover, the effects of different concentrations of growth solutions on the morphology of ZnO nanowires and the Fermi level difference between ZnO and Si are explored as well. Results show that it is the Fermi level difference that dominates the short circuit transfer charge amount and direction of semiconductor-semiconductor CE mechanism. Our work can be applied to understand the CE mechanism in semiconductor-semiconductor case and broaden the application prospects of semiconductor-based TENG.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Atomic-crystal Transition Metal Dichalcogenides Schottky Triboelectricity Nanogenerator with Ultrahigh Direct-Current Density

Jian Zhou,Jianing Zhang,Yuanpeng Deng,Jingran Guo,Han Zhao,Cong Li,Shixuan Dang,Hongxuan Yu,Dizhou Liu,Duola Wang,Chuanyun Song,Yingde Zhao,Zhengli Yan,Jiali Chen,Hui Li,Xiang Xu

DOI: https://doi.org/10.1016/j.nanoen.2024.109936

IF: 17.6

2024-01-01

Nano Energy

Abstract:Direct-current triboelectric nanogenerators (DC-TENGs) have recently become more attractive to convert mechanical energy into electricity due to their high current density with no need for rectification. Interfacial charge transfer, induced by the sliding contact on semiconductor materials, is critical to generate DC output but usually limited by the interfacial properties. Here, we report Schottky DC-TENGs based on the atomic-crystal transition-metal dichalcogenides (TMDs) with single crystallinity, monolayer thickness and atomic flatness to enhance the interfacial charge transfer. A record-high current density of 1010 A/m2, two orders of magnitude higher than the state-of-the-art performance, can be directly generated by sliding a conductive-atomic force microscope tip on an atomic-crystal molybdenum disulfide. Density functional theory calculation and finite element simulation reveal that this ultrahigh current density can be attributed to the enhanced interfacial property owing to the atomic flatness of TMDs and strong local electrical field of nanoscale tip. We further demonstrate their excellent scalability by a high-crystalline monolayer film with sliding electrode. This work may guide and accelerate the development and application of high-performance DC-TENGs.
Dielectric Manipulated Charge Dynamics in Contact Electrification

Kunming Shi,Bin Chai,Haiyang Zou,Daomin Min,Shengtao Li,Pingkai Jiang,Xingyi Huang

DOI: https://doi.org/10.34133/2022/9862980

IF: 11

2022-02-01

Research

Abstract:Surface charge density has been demonstrated to be significantly impacted by the dielectric properties of tribomaterials. However, the ambiguous physical mechanism of dielectric manipulated charge behavior still restricts the construction of high-performance tribomaterials. Here, using the atomic force microscopy and Kelvin probe force microscopy, an in situ method was conducted to investigate the contact electrification and charge dynamics on a typical tribomaterial (i.e., BaTiO 3 /PVDF-TrFE nanocomposite) at nanoscale. Combined with the characterization of triboelectric device at macroscale, it is found that the number of transferred electrons increases with contact force/area and tends to reach saturation under increased friction cycles. The incorporated high permittivity BaTiO 3 nanoparticles enhance the capacitance and electron trapping capability of the nanocomposites, efficiently inhibiting the lateral diffusion of electrons and improving the output performance of the triboelectric devices. Exponential decay of the surface potential is observed over monitoring time for all dielectric samples. At high BaTiO 3 loadings, more electrons can drift into the bulk and combine with the induced charges on the back electrode, forming a large leakage current and accordingly accelerating the electron dissipation. Hence, the charge trapping/storing and dissipating, as well as the charge attracting properties, should be comprehensively considered in the design of high-performance tribomaterials.

multidisciplinary sciences
Achieving high performance triboelectric nanogenerators simultaneously with high-voltage and high-charge energy cycle

Yikui Gao,Jiaqi Liu,Linglin Zhou,Lixia He,Di Liu,Peiyuan Yang,Bingzhe Jin,Zhong Lin Wang,Jie Wang

DOI: https://doi.org/10.1039/d4ee02447h

IF: 32.5

2024-10-10

Energy & Environmental Science

Abstract:Triboelectric nanogenerators (TENGs), serving as an innovative energy harvesting technology, have garnered significant attention and demonstrated promising potential applications across Internet of Things and Artificial Intelligence. However, developing an efficient and rational power management circuits (PMC) remains a significant challenge, primarily attributed to the limited energy transmission efficiency. Here, we propose a universal and effective strategy that can achieve lossless energy transmission between TENG and PMC by using the inherent capacitance of TENG as the excitation source of PMC. Additionally, we attain high-charge output (1.24 mC m-2) and high-voltage output (7,200 V) simultaneously by harnessing the space charge accumulation effect and increasing the thickness of the triboelectric layer. More importantly, a high energy output of 4.24 J m-2 cycle-1 is achieved in HV-HQ energy cycle by eliminating spark discharge at the synchronous switch. This groundbreaking work perfectly addresses the unavoidable low energy transmission efficiency issue, and provides a new methodology for achieving high-performance TENGs to power electrical devices.

energy & fuels,chemistry, multidisciplinary,engineering, chemical,environmental sciences
Effective Interfacial Energy Band Engineering Strategy Toward High-Performance Triboelectric Nanogenerator

Xinkai Xie,Yuxiao Fang,Cheng Lu,Yi Tao,Li Yin,Yibo Zhang,Zixin Wang,Shiyan Wang,Jianwen Zhao,Xin Tu,Xuhui Sun,Eng Gee Lim,Chun Zhao,Yina Liu,Zhen Wen

DOI: https://doi.org/10.1016/j.cej.2022.139469

IF: 15.1

2022-01-01

Chemical Engineering Journal

Abstract:Provided that electron transition ascribed to overlapping electron dominates the mechanism of contact electrification of triboelectric nanogenerators (TENGs), the electron transfer process occurs due to the built-up electric field between the triboelectrification surface and bottom electrode. In this work, we embed a solution-processed high-permittivity electron blocking layer (HPEBL) of LaZrO into the classical contact-separation mode TENG to build an energy barrier (Delta E > 1.3 eV) between ITO and PDMS, which could effectively block the transportation of electrons towards the bottom electrode. The surface potential decline rate of PDMS is obviously suppressed, extending the half-charge decay time by similar to 3.1 times. A La0.1Zr0.9Ox HPEBL based TENG (H-TENG) demonstrates the electrical outputs with 215 V, 96.3 mA m(-2) and 243.3 mu C/m(-2). Under the external load of 100 M Omega, the average gravimetric/volumetric power density and energy conversion efficiency can be calculated to be 59.34 mu W g(-1), 152.5 mu W cm(-3) and 39.2%, respectively. Furthermore, the dielectric behaviors of LaZrO thin films are investigated by metal-insulator-metal (MIM) devices. The Poole-Frenkel (PF) emission is found to dominate the leakage mechanism of LaZrO during operation. Consequently, increasing the relative permittivity and reducing the trap density could be indicated as the optimization orientation of HPEBL.
Substantially boosting performance of triboelectric nanogenerators via a triboelectrification enhancement effect

Yang Yu,Hengyu Li,Xiaosong Zhang,Qi Gao,Borui Yang,Zhong Lin Wang,Tinghai Cheng

DOI: https://doi.org/10.1016/j.joule.2024.04.013

IF: 46.048

2024-06-20

Joule

Abstract:We proposed a triboelectrification enhancement effect (TEE) to enhance the performance of TENGs. With high performance (a 14.8-fold increase in charge generation, a 173.2-fold increase in output energy, and a 10.2 mA output in direct current), the TEE-TENG can power six high-power 100 W commercial lamps and drive a wave warning system with wireless transmission. This work has the advantages of simplicity, zero cost, and versatility for all types of TENGs and will greatly advance TENGs toward extensive practical applications.

materials science, multidisciplinary,chemistry, physical,energy & fuels

Semiconductor Contact‐Electrification‐Dominated Tribovoltaic Effect for Ultrahigh Power Generation

Durable Flexible Direct Current Generation through the Tribovoltaic Effect at Contact-Separation Mode

Study of interfacial design for direct-current tribovoltaic generators

Tribovoltaic Effect on Metal–Semiconductor Interface for Direct‐Current Low‐Impedance Triboelectric Nanogenerators

Tribovoltaic Effect Promotes Highly Efficient Direct-Current Generator

A United Triboelectrification Mechanism for Contacts between All Types of Materials

Coexistence of Contact Electrification and Dynamic p-n Junction Modulation Effects in Triboelectrification.

Tribological-behaviour-controlled direct-current triboelectric nanogenerator based on the tribovoltaic effect under high contact pressure

Tribotronics: an Emerging Field by Coupling Triboelectricity and Semiconductors

Tribovoltaic Effect: Origin, Interface, Characteristic, Mechanism & Application

Surface States Enhanced Dynamic Schottky Diode Generator with Extremely High Power Density over 1000 W M−2

Achieving an ultrahigh direct-current voltage of 130 V by semiconductor heterojunction power generation based on the tribovoltaic effect

Dipole-moment-induced Effect on Contact Electrification for Triboelectric Nanogenerators

Sustained Electron Tunneling at Unbiased Metal-Insulator-semiconductor Triboelectric Contacts

Mechanism of In-Plane and Out-of-Plane Tribovoltaic Direct-Current Transport with a Metal/Oxide/Metal Dynamic Heterojunction

On the Contact Electrification Mechanism in Semiconductor-Semiconductor Case by Vertical Contact-Separation Triboelectric Nanogenerator

Atomic-crystal Transition Metal Dichalcogenides Schottky Triboelectricity Nanogenerator with Ultrahigh Direct-Current Density

Dielectric Manipulated Charge Dynamics in Contact Electrification

Achieving high performance triboelectric nanogenerators simultaneously with high-voltage and high-charge energy cycle

Effective Interfacial Energy Band Engineering Strategy Toward High-Performance Triboelectric Nanogenerator

Substantially boosting performance of triboelectric nanogenerators via a triboelectrification enhancement effect