Abstract:Stacking atomically thin films enables artificial construction of van der Waals heterostructures with exotic functionalities such as superconductivity, the quantum Hall effect, and engineered light-matter interactions. In particular, heterobilayers composed of monolayer transition metal dichalcogenides have attracted significant interest due to their controllable interlayer coupling and trapped valley excitons in moire superlattices. However, the identification of twist-angle-modulated optical transitions in heterobilayers is sometimes controversial since both momentum-direct (K-K) and -indirect excitons reside on the low energy side of the bright exciton in the monolayer constituents. Here, we attribute the optical transition at similar to 1.35 eV in the WS2/WSe2 heterobilayer to an indirect Gamma-K transition based on a systematic analysis and comparison of experimental photoluminescence spectra with theoretical calculations. The exciton wavefunction obtained by the state-of-the-art GW-Bethe-Salpeter equation approach indicates that both the electron and hole of the excitons are contributed by the WS2 layer. Polarization-resolved k-space imaging further confirms that the transition dipole moment of this optical transition is dominantly in-plane and is independent of the twist angle. The calculated absorption spectrum predicts that the so-called interlayer exciton peak coming from the K-K transition is located at 1.06 eV, but with a much weaker amplitude. Our work provides new insight into the steady-state and dynamic properties of twist-angle-dependent excitons in van der Waals heterostructures. The twist-angle-modulated excitons in vertically stacked WS2/WSe2 heterobilayers are proven to be an indirect G-K intralayer transition, with a nearly in-plane transition dipole moment.

Probing the Twist-Controlled Interlayer Coupling in Artificially Stacked Transition Metal Dichalcogenide Bilayers by Second-Harmonic Generation

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Identification of twist-angle-dependent excitons in WS<sub>2</sub>/WSe<sub>2</sub> heterobilayers

Robust Stacking-Independent Ultrafast Charge Transfer in MoS2/WS2 Bilayers

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Probing Evolution of Twist-Angle-Dependent Interlayer Excitons in MoSe2/WSe2 van der Waals Heterostructures

Identification of twist-angle-dependent excitons in WS2/WSe2 heterobilayers

Optically Probing the Asymmetric Interlayer Coupling in Rhombohedral-Stacked MoS2 Bilayer

Hidden phonon highways promote photoinduced interlayer energy transfer in twisted transition metal dichalcogenide heterostructures

Evolution of interlayer coupling in twisted molybdenum disulfide bilayers

Raman scattering investigation of twisted WS2/MoS2 heterostructures: interlayer mechanical coupling versus charge transfer

Control of Subband Energies via Interlayer Twisting in an Artificially Stacked WSe2 Bilayer

First-principles Investigation into the Heterostructures and Moiré Bilayers of Transition Metal Dichalcogenides (TMDCs)

Twist-angle engineering of excitonic quantum interference and optical nonlinearities in stacked 2D semiconductors

Twist-angle-dependent Momentum-Space Direct and Indirect Interlayer Excitons in WSe2/WS2 Heterostructure.

In situ twistronics of van der Waals heterostructures

Stacking-dependent exciton multiplicity in WSe$_2$ bilayers

Twist-assisted optoelectronic phase control in two-dimensional (2D) Janus heterostructures

Stacking-dependent Exciton Multiplicity in WSe2 Bilayers

Twist-Induced Modification in the Electronic Structure of Bilayer WSe 2

Angle-Dependent Oscillatory Interlayer Coupling in Twisted MoS 2 /TaSe 2 Heterostructure