Flexible Boron-Doped Laser-Induced Graphene Microsupercapacitors

Zhiwei Peng,Ruquan Ye,Jason A Mann,Dante Zakhidov,Yilun Li,Preston R Smalley,Jian Lin,James M Tour
DOI: https://doi.org/10.1021/acsnano.5b00436
IF: 17.1
2015-06-23
ACS Nano
Abstract:Heteroatom-doped graphene materials have been intensely studied as active electrodes in energy storage devices. Here, we demonstrate that boron-doped porous graphene can be prepared in ambient air using a facile laser induction process from boric acid containing polyimide sheets. At the same time, active electrodes can be patterned for flexible microsupercapacitors. As a result of boron doping, the highest areal capacitance of as-prepared devices reaches 16.5 mF/cm(2), 3 times higher than nondoped devices, with concomitant energy density increases of 5-10 times at various power densities. The superb cyclability and mechanical flexibility of the device are well-maintained, showing great potential for future microelectronics made from this boron-doped laser-induced graphene material.
What problem does this paper attempt to address?