Abstract:Electrospinning‐derived aligned IGZO (a‐IGZO) NFN FETs are achieved. The superior electrical performance of the transistors is comparable to devices of the same type fabricated in high‐temperature processes. The successful assembly of multi‐scenario devices based on a‐IGZO FETs also confirms thepotential of electrospun highly oriented inorganic fiber arrays obtained in low‐temperature processes forapplications in nano‐integrated circuits andvarious functional devices. Metal oxide field‐effect transistors (MOFETs) represent a promising technology for applications in existing but alsoemerging large‐area electronics. Simultaneously, the rise of 1D nanomaterials with unique properties, represented by nanofibers (NFs), has also energized research. Thus, developing 1D nanofiber networks (NFNs) to act as the potential building blocks for use in fundamental elements of transistors is considered to be a promising approach torealize high‐performance 1D electronics. However, high processing temperatures and disordered nanofiber distribution represent two remaining technical challenges. Here, electrospun highly aligned IGZO (a‐IGZO) nanofiber arrays with low‐thermal‐budget of 350 °C and impressive device characteristics are achieved, including a μFE of 5.63 cm2 V–1 s–1 and superior on/off current ratio of ≈107. When ALD‐derived high‐k HfAlOx thin films are employed as gate dielectrics, the source/drain voltage (VDS) can be substantially reduced by ten times to a range of only 03 V, along with a three times improvement in mobility to a respectable value of 15.9 cm2 V–1 s–1. Successful integrations of logic operation, sensor, and flexible devices implies the potential prospect of a‐IGZO NFN FETs in multifunctional electronics. The strategy for combining cryogenic processes and parallel arrays provides a feasible and reliable route in building future low‐power, high‐performance flexible electronics.

Microwave-assisted calcination of electrospun indium–gallium–zinc oxide nanofibers for high-performance field-effect transistors

Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High- k Gate Dielectrics through Microwave Annealing and Postcalcination Oxygen Plasma Treatment

Performance improvement in electrospun InGaZnO nanofibres field-effect-transistors using low thermal budget microwave calcination and Ar/O2 mixed-plasma surface treatment

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Fabrication of High-Performance A-Igzo Thin-Film Transistor with Post-Annealing Treatment

Aligned Indium Oxide Nanofiber to Achieve High Mobility and High Stability Field-Effect Transistor

Highly conductive and transparent electrospun indium tin oxide nanofibers calcined by microwave plasma

Discovering the Impact of Cooling Scheme During Annealing: A New Knob for Achieving Thermally Stable IGZO FETs

High-Performance a-IGZO TFT Fabricated With Ultralow Thermal Budget via Microwave Annealing

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

High-Performance IGZO Nanowire-Based Field-Effect Transistors with Random-Network Channels by Electrospun PVP Nanofiber Template Transfer

Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics

Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates

Indium Doping-Assisted Monolayer Ga2O3 Exfoliation for Performance-Enhanced MOSFETs.

Microwave-Assisted Annealing Method for Low-Temperature Fabrication of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

High Annealing Stability of InAlZnO Nanofiber Field-Effect Transistors with Improved Morphology by Al Doping

Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO2 Buffer Layer

Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

Performance and Stability of Amorphous Ingazno Thin Film Transistors with A Designed Device Structure