Abstract:Graphene offers exceptional properties, such as ultra-high carrier mobility, near-ballistic transport characteristics, and ultra-high-frequency operational response, making it an ideal material for radio-frequency devices and high-speed optical communications. To realize its potential applications, high-quality graphene films must be integrated onto target substrates with reliability, uniformity, and scalability. Despite significant progress in the chemical vapor deposition of high-quality graphene on catalytic metal substrates, the transfer of such films onto application-targeted substrates remains necessary for large-scale technological use, but it faces challenges like contaminations and cracks. Graphene's flexibility and single-atom thickness make it vulnerable to damage and folding during the transfer process due to force disturbances and uneven force distribution. Traditional graphene transfer methods employ organic polymers as a medium and remove them using organic solvents after transferring graphene onto the desired substrates. However, this repetitive process generates organic waste and leaves unavoidable contamination due to the limited solubility of the polymer. Furthermore, selective interlacing of organic solvents during polymer removal can detach graphene from the substrate and cause cracks. In this study, we demonstrate a novel approach to address these issues. Instead of using organic polymers, we directly use the photoresist as the transfer medium to mechanically delaminate graphene from the metal growth substrate onto the targeted substrate. By doing so, we eliminate the need for repeated polymer coating on the graphene surface, enabling successful transfer without crack formation, wrinkles, or unintentional doping. The strong interaction between graphene and the photoresist, coupled with the weakened interaction between graphene and the growth substrate due to oxidation, ensures crack-free delamination. Moreover, the photoresist serves as a patterned mask plate for exposure, etching, and other subsequent device fabrication processes. As a result, the electrical properties of graphene are improved, achieving an average carrier mobility of 6200 cm(2)center dot V-1 center dot s(-1). This integrated approach not only enhances the device performance of two-dimensional materials but also paves the way for future applications of such materials in electronics and photonics. In conclusion, our method offers a promising solution for the successful transfer and device fabrication of graphene, enhancing its potential in the field of electronics and photonics.

Roll-to-roll continuous patterning and transfer of graphene via dispersive adhesion

Direct transfer of multilayer graphene grown on a rough metal surface using PDMS adhesion engineering

Roll‐to‐Roll Dry Transfer of Large‐Scale Graphene

Direct printing of surface-embedded stretchable graphene patterns with strong adhesion on viscous substrates

One-step transfer and doping of large area graphene by ultraviolet curing adhesive

Large-scale plasma patterning of transparent graphene electrode on flexible substrates

Direct dry transfer of chemical vapor deposition graphene to polymeric substrates

Multiscale, Hierarchical Patterning of Graphene by Conformal Wrinkling.

Selective Mechanical Transfer of Graphene from Seed Copper Foil Using Rate Effects

Roll-to-Roll Mechanical Peeling for Dry Transfer of Chemical Vapor Deposition Graphene

Highly Efficient Laser Bidirectional Graphene Printing: Integration of Synthesis, Transfer and Patterning

Transfer of Cvd-Grown Monolayer Graphene Onto Arbitrary Substrates

Using Scalable Graphene via Press-and-Peel: A Robust and Storable Tape

Rapid roll-to-roll production of graphene films using intensive Joule heating

Residue-free Fabrication of High-Performance Graphene Devices by Patterned PMMA Stencil Mask

Tunable Adhesion for All-Dry Transfer of 2D Materials Enabled by the Freezing of Transfer Medium

Crack-Free Transfer of Graphene Wafers Via Photoresist As Transfer Medium

High mobility graphene field effect transistors on flexible EVA/PET foils

Electrostatic Force Assisted Exfoliation of Prepatterned Few-Layer Graphenes into Device Sites.

Use of Hydrophobic-Hydrophobic Interactions for Direct Graphene Transfer

Directed self-assembly of block copolymer films on atomically-thin graphene chemical patterns