Abstract:Semiconductor micro-chips with critical dimensions of 50 nm and below will likely be manufactured with extreme ultraviolet (EUV) lithography at a wavelength of 13.5 nm. Among others EUV lithography requires a brilliant radiation source with output power between 50W and 120W collected in an intermediate focus at the entrance of the exposure tool. The development of these powerful EUV sources will have spin-off products for applications related to inspection and quality control in lithography related industry. We also expect numerous applications in microand nano-machining and –processing as well as microscopy at shortest wavelengths. In the present paper experimental results of both laser produced plasma and gas discharge produced plasma EUV source development at XTREME technologies – the EUV joint venture of Lambda Physik AG, Goettingen, and Jenoptik LOS GmbH, Jena, Germany – are presented. Source characterization has been performed with calibrated metrology tools for measurement of energy, power, size, spectra and stability of the EUV emission. The laser plasma investigations are performed with a 1st experimental facility comprising a commercial 40W Nd:YAG laser coupled to a liquid xenon-jet target system, which was developed by XTREME technologies. The EUV in-band power emitted from the 0.25mm diameter plasma into 2π solid angle is 0.2W, the conversion efficiency amounts 0.5%. Estimated EUV emission parameters using a 500W laser for plasma generation are discussed. The gas discharge EUV sources described here are based on efficient Xenon Z-pinches. In the 3rd prototype generation the plasma pinch size and the available emission angle have been matched to the etendue of the optical system of 2–3mm2. The solid angle of emission from the pinch of 1.3mm ×1.5mm amounts 1.8 sr. The Z-pinch EUV source can be operated continuously at 1000 Hz with an in-band output power of 10W in 1.8 sr. This corresponds to 4.5W in intermediate focus, if no spectral purity filter is needed. The power emitted into a solid angle of 2π sr is 35W. Emission energy stability ranges between 1% and 4% standard deviation. Spectral, temporal as well as spatial emission characteristics of the discharge source in dependence on the gas discharge geometry have been evaluated. The potentials as well as limits for power scaling of the two technological source concepts and potential application areas of EUV radiation at 13.5 nm and XUV radiation between 1 nm and 80 nm in microand nano-processing and inspection are discussed.

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