Process and optical modeling of black silicon

Guillermo Sanchez-Plaza,Alfonso Urquia

DOI: https://doi.org/10.1364/oe.516245

IF: 3.8

2024-05-02

Optics Express

Abstract:Guillermo Sanchez-Plaza, Alfonso Urquia Black silicon is relevant for the photovoltaic industry when searching for low-reflectance, low-defect front surface, which is the goal of ... [Opt. Express 32, 17704-17718 (2024)]

optics

What problem does this paper attempt to address?

Black Silicon with Order-Disordered Structures for Enhanced Light Trapping and Photothermic Conversion

Zengxing Zhang,Yonghua Wang,Per Anders Stensby Hansen,Kang Du,Kim Robert Gustavsen,Guohua Liu,Frank Karlsen,Ola Nilsen,Chenyang Xue,Kaiying Wang

DOI: https://doi.org/10.1016/j.nanoen.2019.103992

IF: 17.6

2019-01-01

Nano Energy

Abstract:Black silicon has become a versatile substrate for photoelectric and photothermic application due to its excellent light trapping ability. However, subsequent material engineering can conflict with its intrinsic anti-reflective behavior. In this paper, we present a two-step etching approach to create novel black silicon combining ordered micropores and disordered nanopores. The larger pores increase the optical path length and provide space to load functional materials, while the smaller ones facilitate coupling between the incident solar radiation and material. The proposed etching method increases the light-trapping ability of conventional nanostructured black silicon and achieves enhanced absorption in a broad spectrum. Besides, loading Au nanoparticles further improve the light absorbance in the near-infrared range of 1100-1700 nm. The intrinsic SiOx-rich layer on silicon surface produced during SF6/O-2 plasma etching leads to photothermic conversion being the dominant dissipation route for the light energy, thereby yielding outstanding performance in photothermic and photo-thermalelectric demonstrations. This work establishes a robust relationship between three-dimensional structure and light-trapping property of black silicon and provides insights into substrate designs that facilitate the light conversion.
Evaluating the Optical Response of Heavily Decorated Black Silicon Based on a Realistic 3D Modeling Methodology

Yuhang Li,Dong Wang,Zhengchen Liang,Lingxiao Zeng,Wenxue Li,Peng Xie,Qi Ding,Hong Zhang,Peter Schaaf,Wei Wang

DOI: https://doi.org/10.1021/acsami.2c05652

2022-07-01

Abstract:Combining black silicon (BS), a nanostructured silicon containing highly roughened surface morphology with plasmonic materials, is becoming an attractive approach for greatly enhancing light-matter interactions with promising applications of sensing and light harvesting. However, precisely describing the optical response of a heavily decorated BS structure is still challenging due to the increasing complexity in surface morphology and plasmon hybridization. Here, we propose and fully...

materials science, multidisciplinary,nanoscience & nanotechnology
Ultralow Broadband Reflectivity in Black Silicon Via Synergy Between Hierarchical Texture and Specific‐Size Au Nanoparticles

Zengxing Zhang,Thomas Martinsen,Guohua Liu,Muhammad Tayyib,Danfeng Cui,Meint J. de Boer,Frank Karlsen,Henrik Jakobsen,Chenyang Xue,Kaiying Wang

DOI: https://doi.org/10.1002/adom.202000668

IF: 9

2020-01-01

Advanced Optical Materials

Abstract:Antireflectivity is one of the critical factors defining the performance of black silicon in optical, photothermal, photochemical, and optoelectronic applications. The photonic applications under visible light illumination are commonly tuned through surface texturing; however, their promising performance under longer wavelength (>1100 nm) requires either intrinsic lattice modifications or additional substance enhancement. Recent advances in microfabrication and material engineering have enabled in‐depth exploration into the synergy between surface texturing and material reinforcement. In this study, black silicon with novel chimney‐like hierarchical micro/nanostructures is fabricated via two‐step reactive ion etching, and subsequently gold nanoparticles (Au NPs) are loaded on the black silicon by magnetron sputtering deposition. The micro/nanostructures result in synergy effect with the Au NPs on suppression of light reflection. An ultralow broadband reflection (<1%, wavelength 220–2600 nm) is achieved from the Au‐loaded black silicon substrates. The impact of Au NPs and structural design such as size, spacing, shape, and etching duration on antireflectivity of black silicon is investigated. This study opens up new avenue for high‐efficiency applications of black silicon in the fields of sustainable energy and photonics/microelectronics.
Recent Progress of Black Silicon: From Fabrications to Applications

Zheng Fan,Danfeng Cui,Zengxing Zhang,Zhou Zhao,Hongmei Chen,Yanyun Fan,Penglu Li,Zhidong Zhang,Chenyang Xue,Shubin Yan

DOI: https://doi.org/10.3390/nano11010041

IF: 5.3

2021-01-01

Nanomaterials

Abstract:Since black silicon was discovered by coincidence, the special material was explored for many amazing material characteristics in optical, surface topography, and so on. Because of the material property, black silicon is applied in many spheres of a photodetector, photovoltaic cell, photo-electrocatalysis, antibacterial surfaces, and sensors. With the development of fabrication technology, black silicon has expanded in more and more applications and has become a research hotspot. Herein, this review systematically summarizes the fabricating method of black silicon, including nanosecond or femtosecond laser irradiation, metal-assisted chemical etching (MACE), reactive ion etching (RIE), wet chemical etching, electrochemical method, and plasma immersion ion implantation (PIII) methods. In addition, this review focuses on the progress in multiple black silicon applications in the past 10 years. Finally, the prospect of black silicon fabricating and various applications are outlined.
Optimization of the Surface Structure on Black Silicon for Surface Passivation

Xiaojie Jia,Chunlan Zhou,Wenjing Wang

DOI: https://doi.org/10.1186/s11671-017-1910-6

Nanoscale Res Lett

Abstract:Black silicon shows excellent anti-reflection and thus is extremely useful for photovoltaic applications. However, its high surface recombination velocity limits the efficiency of solar cells. In this paper, the effective minority carrier lifetime of black silicon is improved by optimizing metal-catalyzed chemical etching (MCCE) method, using an Al2O3 thin film deposited by atomic layer deposition (ALD) as a passivation layer. Using the spray method to eliminate the impact on the rear side, single-side black silicon was obtained on n-type solar grade silicon wafers. Post-etch treatment with NH4OH/H2O2/H2O mixed solution not only smoothes the surface but also increases the effective minority lifetime from 161 μs of as-prepared wafer to 333 μs after cleaning. Moreover, adding illumination during the etching process results in an improvement in both the numerical value and the uniformity of the effective minority carrier lifetime.
Study of Black Silicon Wafer through Wet Chemical Etching for Parametric Optimization in Enhancing Solar Cell Performance by PC1D Numerical Simulation

Yasir Arafat,Mohammad Aminul Islam,Ahmad Wafi Bin Mahmood,Fairuz Abdullah,Tiong Sieh Kiong,Nowshad Amin,Md. Yasir Arafat

DOI: https://doi.org/10.3390/cryst11080881

IF: 2.7

2021-07-29

Crystals

Abstract:Black silicon (BSi) fabrication via surface texturization of Si-wafer in recent times has become an attractive concept regarding photon trapping and improved light absorption properties for photovoltaic applications. In this study, surface texturization has been conducted on mono-crystalline Si(100) wafer using a wet chemical anisotropic etching process with IPA:KOH solution to form micro-pyramidal surface structures. Moreover, the optimized properties of the fabricated BSi wafers are used for numerical simulation using PC1D software to analyze the performance of the solar cell and establish the correlation among relevant parameters. Effects such as doping concentration, texturization, passivation, and anti-reflection coating of BSi on the solar cell performance have numerically been investigated. Results show that textured surface obtained from the wet chemical anisotropic etching process has successfully reduced the reflectance of the BSi wafer and surpassed the solar cell efficiency by 2%, which is mainly attributed to the optical confinement of the textured pyramids on the surface with a height of 1–2 μm and angles of 70 degrees. Furthermore, the doping concentration of the p-type wafer and n-type emitter were optimized to be 1 × 1016 cm−3 and 1 × 1018 cm−3, respectively. In the case of device optimization, the SiO2 passivation layer with a refractive index of 1.48 and the Si3N4 ARC layer with a refractive index of 2.015 has been identified as the best combination for the solar cell performance. These optimized parameters eventually result in 23.14% conversion efficiency from numerical simulation for solar cells that use black silicon wafers as fabricated in this study.

materials science, multidisciplinary,crystallography
Reflective Properties of Black Silicon in a Wide Spectral Range

G. Y. Ayvazyan

DOI: https://doi.org/10.1134/s106833722470021x

2024-11-27

Journal of Contemporary Physics (Armenian Academy of Sciences)

Abstract:The structural and reflective properties (total reflectance and scattering) of black silicon layers formed by reactive ion etching have been studied. Reflectance spectra were determined in the visible, near-infrared, and near-ultraviolet wavelength ranges. The influence of etching duration on the optical behavior of black silicon layers is studied and the possibilities of their use in solar cells and photodetectors are discussed.

physics, multidisciplinary
Large-Scale Black Silicon Induced by Femtosecond Laser Assisted With Laser Cleaning

Zhidong Wen,Haiyan Shi,Song Yue,Man Li,Zhe Zhang,Ran Wang,Qi Song,Ziye Xu,Zichen Zhang,Yu Hou

DOI: https://doi.org/10.3389/fphy.2022.862605

IF: 3.718

2022-03-25

Frontiers in Physics

Abstract:Black silicon is a promising and effective candidate in the field of photoelectric devices due to the high absorptance and broad-spectrum absorption property. The deposition around the processing area induced by the pressure of SF 6 , gravity, and the block of the processing chamber interferes the adjacent laser ablation and hampers uniform large-scale black silicon fabrication. To solve the problem, femtosecond laser- induced black silicon assisted with laser plasma shockwave cleaning is creatively proposed in our study. The results showed that higher, denser, and more uniform microstructures can be obtained than the conventional laser-induced method without laser cleaning. The average absorptance is 99.15% in the wavelength range of 0.3–2.5 μm, while it is more than 90% in the range of 2.5–20 μm. In addition, the scanning pitch dependence of surface morphology is discussed, and the better result is obtained in the range of 25–35 μm with 40-μm laser spot. Finally, a large-scale 50-mm × 50-mm black silicon with uniform microstructures was prepared by our method. It has been demonstrated that the deposition is effectively eliminated via our method, and the optical absorption is also enhanced significantly. It is of great significance for realizing large-scale preparation of photoelectric devices based on black silicon and lays the foundation for the development of laser-inducing equipment and industrial application.

physics, multidisciplinary
Wide-band “black Silicon” Based on Porous Silicon

LL Ma,YC Zhou,N Jiang,X Lu,J Shao,W Lu,J Ge,XM Ding,XY Hou

DOI: https://doi.org/10.1063/1.2199593

IF: 4

2006-01-01

Applied Physics Letters

Abstract:Solar cells and optical detection devices often incorporate antireflective surfaces to reduce undesired reflection and enhance optical absorption. This letter reports a “black silicon” structure of antireflective porous silicon fabricated by using electrochemical etching. The sample has a gradient-index multilayer structure, i.e., the refraction indices of the structure increase from the top (near the air) to the bottom (near the Si substrate). Reflectance below 5% is obtained over a broad wave number range (3000–28000cm−1) and the depression mechanism of the optical reflectance is analyzed by simulating the structure with the transfer matrix method. The simulated result fits the measured spectra well.
A novel method to fabricate the black silicon for the solar cell

li zhang,jun he,danqi zhao,dacheng zhang,xian huang

DOI: https://doi.org/10.1109/EDSSC.2014.7061187

2014-01-01

Abstract:In this paper, an one-step method to fabricate the black silicon with varying scale was introduced. This novel method was conducted at room temperature and completely compatible with the traditional process. This method was based on a standard Bosch deep reactive ions etching with a phase-delay producer. The relationship between the process parameter and the key physical factor was investigated and the practical reflectance of the black silicon was measured. The results showed the black silicon, produced by this method, had a very low reflectance and was easy to change the scale.
Nanostructured pyramidal black silicon with ultra-low reflectance and high passivation

Chia-Hsun Hsu,Shih-Mao Liu,Wan-Yu Wu,Yun-Shao Cho,Pao-Hsun Huang,Chien-Jung Huang,Shui-Yang Lien,Wen-Zhang Zhu

DOI: https://doi.org/10.1016/j.arabjc.2020.01.004

IF: 6.212

2020-11-01

Arabian Journal of Chemistry

Abstract:In this study, nanostructured pyramidal black silicon is prepared by metal assisted chemical etching method, in which the silver nitrate (AgNO3) is used as the metal catalyst. Effects of the concentration of AgNO3 on passivation and optical properties of the black silicon are investigated. The experimental results show that at the AgNO3 concentration of 0.03 M, the nanostructure length is about 300 nm, and the reflectance of the black silicon with a stack of silicon nitride (SiNx) and aluminum oxide (Al2O3) is 0.8%, which is comparable to that of the conventional black silicon with micrometer-long nanowires. In addition, an acceptably low surface recombination rate of 42 cm/s can be obtained. Plasma chemical vapor deposited SiNx is deposited well on the top of nanostructures of black silicon, but shows poor coverage at the bottom region. Spatial atomic layer deposited Al2O3 can conformally cover the nanostructures with high passivation quality. Simulation result indicates an improvement of 5.5% of conversion efficiency for the nanostructured pyramidal black silicon solar cell compared to industrial silicon solar cell. The short nanostructured pyramidal surface with low reflectance and high passivation is expected to be helpful for black silicon technology applied to photovoltaic applications.

chemistry, multidisciplinary
Black Silicon as Anti-Reflective Structure for Infrared Imaging Applications

Eivind Bardalen,Angelos Bouchouri,Muhammad Nadeem Akram,Hoang-Vu Nguyen

DOI: https://doi.org/10.3390/nano14010020

2023-12-20

Abstract:For uncooled infrared cameras based on microbolometers, silicon caps are often utilized to maintain a vacuum inside the packaged bolometer array. To reduce Fresnel reflection losses, anti-reflection coatings are typically applied on both sides of the silicon caps.This work investigates whether black silicon may be used as an alternative to conventional anti-reflective coatings. Reactive ion etching was used to etch the black silicon layer and deep cavities in silicon. The effects of the processed surfaces on optical transmission and image quality were investigated in detail by Fourier transform infrared spectroscopy and with modulated transfer function measurements. The results show that the etched surfaces enable similar transmission to the state-of-the-artanti-reflection coatings in the 8-12 µm range and possibly obtain wider bandwidth transmission up to 24 µm. No degradation in image quality was found when using the processed wafers as windows. These results show that black silicon can be used as an effective anti-reflection layer on silicon caps used in the vacuum packaging of microbolometer arrays.
The use of remote Femto Second technology in the preparation of black silicon material and optical devices

Ninghui Li,Yuan Chen

DOI: https://doi.org/10.1371/journal.pone.0283456

IF: 3.7

2023-03-28

PLoS ONE

Abstract:The research aims to study the application of remote Femto Second (FS) technology in black silicon material preparation and optical devices. Based on the principle and characteristic research of FS technology, the interaction between FS and silicon is adopted to propose a scheme for preparing black silicon material through experiments. Moreover, the experimental parameters are optimized. Then, the scheme of using the FS for etching polymer optical power splitter as a new technical means is proposed. In addition, while ensuring processing accuracy, the appropriate process parameters of laser etching photoresist are obtained. The results show that the performance of black silicon prepared with SF 6 as the background gas is greatly improved in the 400-2200nm range. However, the performance of black silicon samples with the two-layer structure etched at different laser energy densities has little difference. Black silicon with a Se+Si two-layer film structure has the best optical absorption performance in the infrared range of 1100nm-2200nm. Besides, the optical absorption rate is the highest when the laser scanning rate is 0.5mm/s. In the band of >1100nm, when the maximum laser energy density is 6.5kJ/m2, the overall absorption of the etched sample is the worst. The absorption rate is the best when the laser energy density is 3.9kJ/m2. It suggests that the proper parameter selection greatly impacts the quality of the final laser-etched sample.

multidisciplinary sciences
Hierarchical Structuring of Black Silicon Wafers by Ion-Flow-Stimulated Roughening Transition: Fundamentals and Applications for Photovoltaics

Vyacheslav N Gorshkov,Mykola O Stretovych,Valerii F Semeniuk,Mikhail P Kruglenko,Nadiia I Semeniuk,Victor I Styopkin,Alexander M Gabovich,Gernot K Boiger

DOI: https://doi.org/10.3390/nano13192715

2023-10-06

Abstract:Ion-flow-stimulated roughening transition is a phenomenon that may prove useful in the hierarchical structuring of nanostructures. In this work, we have investigated theoretically and experimentally the surface texturing of single-crystal and multi-crystalline silicon wafers irradiated using ion-beam flows. In contrast to previous studies, ions had relatively low energies, whereas flow densities were high enough to induce a quasi-liquid state in the upper silicon layers. The resulting surface modifications reduced the wafer light reflectance to values characteristic of black silicon, widely used in solar energetics. Features of nanostructures on different faces of silicon single crystals were studied numerically based on the mesoscopic Monte Carlo model. We established that the formation of nano-pyramids, ridges, and twisting dune-like structures is due to the stimulated roughening transition effect. The aforementioned variety of modified surface morphologies arises due to the fact that the effects of stimulated surface diffusion of atoms and re-deposition of free atoms on the wafer surface from the near-surface region are manifested to different degrees on different Si faces. It is these two factors that determine the selection of the allowable "trajectories" (evolution paths) of the thermodynamic system along which its Helmholtz free energy, F, decreases, concomitant with an increase in the surface area of the wafer and the corresponding changes in its internal energy, U (dU>0), and entropy, S (dS>0), so that dF=dU - TdS<0, where T is the absolute temperature. The basic theoretical concepts developed were confirmed in experimental studies, the results of which showed that our method could produce, abundantly, black silicon wafers in an environmentally friendly manner compared to traditional chemical etching.
Performance investigation of black silicon solar cells with surface passivated by BiFeO3/ITO composite film

Tan Man-Lin,Zhou Dan-Dan,Fu Dong-Ju,Zhang Wei-Li,Ma Qing,Li Dong-Shuang,Chen Jian-Jun,Zhang Hua-Yu,Wang Gen-Ping

DOI: https://doi.org/10.7498/aps.66.167701

2017-01-01

Abstract:In order to prepare black silicon material with excellent optical absorption performance for solar cell application, a micro/nano bilayer-structure is formed on the surface of textured silicon wafer by a silver assisted chemical etching method. It is found that the deeper nanoholes could form as the etching time is longer, and the surface reflectivity is reduced obviously due to the increased time of photon reflection from the nanowires. The incident light reflectivity of the prepared black silicon is significantly reduced to 2.3%, showing obviously better optical reflectance characteristics than general monocrystalline silicon wafer, especially in a wavelength range of 300-830 nm. Considering the fact that a large number of carrier recombination centers is introduced into the nanostructured crystal silicon surface, BiFeO3/ITO composite film is coated on the surface of the black silicon solar cell by magnetron sputtering process to optimize the surface defect states and improve the cell performance. The experimental results show that the lengths of the nanowires are predominantly in a range of 180-320 nm for the prepared black silicon with micro/nano double-layer structure. The reflectivity of the incident light is below 5% in a wavelength range from 300 nm to 1000 nm, and reaches a maximal value at about 700 nm. The reflectance increases slightly as BiFeO3/ITO composite film is coated on the surface of black silicon solar cell, but it is still much lower than that of general monocrystalline silicon solar cell. The open circuit voltage and short circuit current density of the black silicon solar cell increase respectively from 0.61 V to 0.68 V and from 28.42 mA/cm2to 34.57 mA/cm2after it has been coated with BiFeO3/ITO composite film, and the photoelectric conversion efficiency of the cell increases from 13.3% to 16.8% accordingly. The improvement in performance of black silicon solar cell is mainly due to the promotion of effective separation of photogenerated carriers, thereby enhancing the spectral response of black silicon solar cell in the whole wavelength range. This indicates that the spontaneously polarized BiFeO3film can play a better role in improving the surface properties of black silicon solar cell. On the other hand, for the BiFeO3film deposited on the surface of black silicon, a spontaneous polarization positive electric field could be produced, pointing from the film surface to the inside of the solar cell. This polarization electric field could also act as part of built-in electric field to contribute the photoelectric transformation of the black silicon solar cell, leading to the open circuit voltage of cell increasing from 0.61 V to 0.68 V. © 2017 Chinese Physical Society.
Nanostructured Black Silicon for Efficient Thin Silicon Solar Cells: Potential and Challenges

Sanjay K. Srivastava,Prashant Singh,Avritti Srivastava,P. Prathap,Sushil Kumar,C. M. S. Rauthan,D. K. Aswal

DOI: https://doi.org/10.1007/978-981-15-6116-0_18

2020-01-01

Abstract:The world’s energy system is at crossroads as the natural fossil fuels are becoming increasingly unavailable and more expensive. Thus, the usage of various renewable energy (RE) sources to provide environmentally benign, economically feasible and sustainable energy supply is drawing more attention to meet ever-increasing energy demands. Among the various RE sources, solar energy has the potential to provide energy independence and security of supply to every economy. Among the possible solutions, the deployment of photovoltaic (PV) modules to directly convert solar radiation into electricity is one of the best choices. The PV is one of the promising technologies to provide a feasible carbon-free route to replacing nonrenewable power sources worldwide. However, the limited performance to cost ratio for the present market-dominating silicon (Si) wafer PV modules restricts large-scale civil utilization of solar electricity. One of the basic costs for Si PV cells is the starting Si wafer itself, which requires several extensive purification to maintain the reasonable performance of the device. Thus, developing PV devices of high performance to cost ratio has always been in demand. Researchers are trying to explore solar cell designs via an unconventional method, aiming at cost reduction and performance improvement. One of the growing potential approaches is PV designs based on nano-architectured materials with low cost and advanced optical and electrical management properties. Micro-and nanostructured Si surfaces are well known for their applications in Si micro-and optoelectronic devices, particularly in solar PV. A particular class of nanostructured silicon is called black silicon. The black Si concept is a promising approach to eliminate front surface reflection (<2% in broad spectral range) omnidirectionally in PV devices without the need for a conventional anti-reflection coatings (ARC). Besides, strong light-trapping can also be achieved for weakly absorbed photons with energies close to the absorption edge of Si and might lead to both an increase in efficiency as well as a reduction in the fabrication costs of solar cells. The nanostructured black Si surfaces, suitable for solar cell applications, have been fabricated by various methods such as metal-assisted wet-chemical etching (MACE), dry reactive ion etching (RIE), etc. In the chapter, a brief introduction of PV technology is presented along with the current status of Si wafer based solar cells. Various challenges/losses associated with conventional solar cell technology with an emphasis on addressing the optical/reflection losses are also discussed. Efforts made to minimize these losses with an emphasis on minimization of reflection losses through nanostructuring schemes are discussed. Moreover, an attempt is made to present a review on the recent progress of black Si research for solar cell technologies. First, MACE technique for the preparation of black Si is discussed in detail along with a brief critical analysis with respect to advantages and disadvantages for solar PV applications. The applications of black Si in solar cells and the progress over the years are then summarized. In addition, one of the major challenges of black Si cell is enhanced surface recombination which imposes a critical limit to solar cell efficiency especially in thinner solar cells. Hence, an efficient black Si solar cell can only be obtained if an optimal trade-off between light absorption gain and electrical losses (due to recombination) is achieved for the black Si-based PV technology. The dielectric thin films play a critical role in effective surface passivation of the black Si surfaces. Therefore, the current status of passivation schemes and challenges for black Si solar cell technology is also highlighted. Moreover, the current status of black Si solar cells concepts employing both monocrystalline, multicrystalline Si as well as the concept of thin/flexible silicon solar cells towards high-efficiency solar cells is reviewed critically. Finally, conclusions and future prospects of the black Si concept is outlined wherein it is envisaged that nanostructured black Si will play a key role in cost-effective and efficient solar photovoltaic devices in days to come.
Femtosecond laser-induced black silicon: a dual application in photodetection and surface-enhanced Raman scattering

Xuan Wang,Bing Zhao,Jijil Nivas,Xiaona Zhao,Wenhan Du,Salvatore Amoruso

DOI: https://doi.org/10.1364/oe.537025

IF: 3.8

2024-09-26

Optics Express

Abstract:Xuan Wang, Bing Zhao, Jijil Nivas, Xiaona Zhao, Wenhan Du, Salvatore Amoruso A multifunctional structured silicon with enhanced optical and photoelectric properties has been processed by femtosecond (fs) laser in ... [Opt. Express 32, 36362-36380 (2024)]

optics
Formation Mechanism of Multi-Functional Black Silicon Based on Optimized Deep Reactive Ion Etching Technique with SF 6 /C 4 F 8

FuYun Zhu,XiaoSheng Zhang,HaiXia Zhang

DOI: https://doi.org/10.1007/s11431-014-5753-4

2015-01-01

Abstract:This paper reports a controllable multi-functional black silicon surface with nanocone-forest structures fabricated by an optimized deep reactive ion etching (DRIE) technique using SF6/C4F8 in cyclic etching-passivation process, which is maskless, effective and controllable. The process conditions are investigated by systematically comparative experiments and core parameters have been figured out, including etching process parameters, pre-treatment, patterned silicon etching and inclined surface etching. Based on the experimental data, the formation mechanism of nanocone shape is developed, which provides a novel view for in-depth understanding of abnormal phenomena observed in the experiments under different process situations. After the optimization of the process parameters, the black silicon surfaces exhibit superhydrophobicity with tunable reflectance. Additionally, the quantitative relationship between nanocones aspect ratio and surface reflectance and static contact angle is obtained, which demonstrates that black silicon surfaces with unique functional properties (i.e., cross-combination of reflectance and wettability) can be achieved by controlling the morphology of nanostructures.
Effect of thermal annealing on the structural and optical properties of black silicon

Gagik Ayvazyan,Ashok Vaseashta,Ferdinand Gasparyan,Surik Khudaverdyan

DOI: https://doi.org/10.1007/s10854-022-08578-y

2022-06-21

Abstract:Black silicon (b-Si) is considered as an ideal material for optoelectronic devices due to its better optical, electrical, and intrinsic properties, such as high surface-to-volume ratio, ultralow light reflection, high chemical activity, and super hydrophobicity. In addition, b-Si materials demonstrate lower band reflection and hence, are used in solar cells as anti-reflective surfaces. Thermal annealing in optoelectronic device processing is known to be standard and crucial fabrication steps; there is a trade-off with device characteristics, which is the case for b-Si. In this experimental investigation, we report the influence of thermal annealing treatment on the optical and structural properties of the b-Si layers fabricated using the plasma-based reactive ion etching method. The results demonstrate that structural properties, i.e., average height, surface enhancement factor, and root mean square roughness of b-Si layers after annealing at different temperatures changed quite significantly. This leads to deterioration of optical properties like reflection and absorption of b-Si layers. Finally, a new fabrication process of b-Si solar cells is proposed and tested. According, the b-Si layer is grown after the high-temperature diffusion process. The results of this study show that the new b-Si solar cell performance parameters are improved compared to that of the conventional solar cell. This can increase b-Si material extension to other applications.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Black silicon for near-infrared and ultraviolet photodetection: A review

Zhou Zhao,Zengxing Zhang,Junmin Jing,Rui Gao,Zhiwei Liao,Wenjun Zhang,Guohua Liu,Yonghua Wang,Kaiying Wang,Chenyang Xue

DOI: https://doi.org/10.1063/5.0133770

IF: 6.6351

2023-02-16

APL Materials

Abstract:As a typical representative of micro/nano-textured silicon, black silicon has excellent light absorption properties and is gradually surfacing as a substitute for standard silicon in photoelectric devices. Black silicon overcomes the limitations of traditional silicon-based devices, which are unable to achieve infrared light detection at wavelengths >1100 nm and have low quantum efficiency and sensitivity in ultraviolet light detection. In this article, the recent theoretical and experimental breakthroughs in near-infrared and ultraviolet detection using black silicon are summarized in detail. First, black silicon and the techniques for its fabrication are introduced. Then, the application of enhanced black silicon photodetectors within or above the bandgap limit and black silicon fabricated using different methods in infrared detection is discussed. In principle, infrared detection using black silicon is achieved by jointly utilizing element doping, localized surface plasmon resonance effect, and heterojunction formation. In addition, the application of black silicon in ultraviolet detection is also introduced. Ultraviolet detection is realized by an induced junction and the self-built electric field between black silicon and aluminum oxide. Finally, the increasingly growing potential of black silicon in near-infrared and ultraviolet detection applications, such as infrared night vision imaging, signal detection, ultraviolet light intensity monitoring, and national defense early warning, is further discussed.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

Process and optical modeling of black silicon

Black Silicon with Order-Disordered Structures for Enhanced Light Trapping and Photothermic Conversion

Evaluating the Optical Response of Heavily Decorated Black Silicon Based on a Realistic 3D Modeling Methodology

Ultralow Broadband Reflectivity in Black Silicon Via Synergy Between Hierarchical Texture and Specific‐Size Au Nanoparticles

Recent Progress of Black Silicon: From Fabrications to Applications

Optimization of the Surface Structure on Black Silicon for Surface Passivation

Study of Black Silicon Wafer through Wet Chemical Etching for Parametric Optimization in Enhancing Solar Cell Performance by PC1D Numerical Simulation

Reflective Properties of Black Silicon in a Wide Spectral Range

Large-Scale Black Silicon Induced by Femtosecond Laser Assisted With Laser Cleaning

Wide-band “black Silicon” Based on Porous Silicon

A novel method to fabricate the black silicon for the solar cell

Nanostructured pyramidal black silicon with ultra-low reflectance and high passivation

Black Silicon as Anti-Reflective Structure for Infrared Imaging Applications

The use of remote Femto Second technology in the preparation of black silicon material and optical devices

Hierarchical Structuring of Black Silicon Wafers by Ion-Flow-Stimulated Roughening Transition: Fundamentals and Applications for Photovoltaics

Performance investigation of black silicon solar cells with surface passivated by BiFeO3/ITO composite film

Nanostructured Black Silicon for Efficient Thin Silicon Solar Cells: Potential and Challenges

Femtosecond laser-induced black silicon: a dual application in photodetection and surface-enhanced Raman scattering

Formation Mechanism of Multi-Functional Black Silicon Based on Optimized Deep Reactive Ion Etching Technique with SF 6 /C 4 F 8

Effect of thermal annealing on the structural and optical properties of black silicon

Black silicon for near-infrared and ultraviolet photodetection: A review