Ultranarrow-bandgap small-molecule acceptor enables sensitive SWIR detection and dynamic upconversion imaging

Yongjie Chen,Yingqi Zheng,Jing Wang,Xuan Zhao,Guanhao Liu,Yi Lin,Yubo Yang,Lixiang Wang,Zheng Tang,Ying Wang,Yanjun Fang,Wenkai Zhang,Xiaozhang Zhu

DOI: https://doi.org/10.1126/sciadv.adm9631

IF: 13.6

2024-06-07

Science Advances

Abstract:Short-wavelength infrared (SWIR) light detection plays a key role in modern technologies. Emerging solution-processed organic semiconductors are promising for cost-effective, flexible, and large-area SWIR organic photodiodes (OPDs). However, the spectral responsivity ( R ) and specific detectivity ( D *) of SWIR OPDs are restricted by insufficient exciton dissociation and high noise current. In this work, we synthesized an SWIR small molecule with a spectral coverage of 0.3 to 1.3 micrometers peaking at 1100 nanometers. The photodiode, with optimized exciton dissociation, charge injection, and SWIR transmittance, achieves a record high R of 0.53 ampere per watt and D * of 1.71 × 10 13 Jones at 1110 nanometers under zero bias. The D * at 1 to 1.2 micrometers surpasses that of the uncooled commercial InGaAs photodiode. Furthermore, large-area semitransparent all-organic upconversion devices integrating the SWIR photodiode realized static and dynamic SWIR-to-visible imaging, along with excellent upconversion efficiency and spatial resolution. This work provides alternative insights for developing sensitive organic SWIR detection.

multidisciplinary sciences

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on the development of efficient short - wave infrared (SWIR, 1 - 3 micrometers) organic photodetectors (OPDs). Specifically, the main challenges faced by researchers include:

1. **Improving spectral responsivity (R)**: Existing SWIR OPDs are deficient in spectral responsivity, especially with a low external quantum efficiency (EQE) in the SWIR region. This is mainly due to the decrease in the absorption coefficient of materials in the SWIR region and the photocurrent loss caused by the increase in the non - radiative recombination rate.

2. **Reducing noise current (i_n)**: High noise current limits the specific detectivity (D*), which is a key indicator for measuring the sensitivity of photodetectors to weak light. Although commercial inorganic semiconductor materials such as germanium (Ge) and III - V semiconductors (e.g., indium gallium arsenide, InGaAs) have good performance, they are costly and difficult to produce on a large scale. Therefore, it is necessary to develop organic materials with low noise current.

3. **Achieving efficient exciton dissociation**: Low exciton dissociation efficiency is the main cause of EQE loss. Although applying a reverse bias can improve the exciton dissociation efficiency, it also increases the noise current, thereby deteriorating D*.

To address these challenges, researchers synthesized a new small - molecule non - fullerene acceptor (SM - NFA), named ATT - X - Fin. By introducing strong electron - donating units and strong electron - accepting units, this molecule achieved a wide spectral response from 0.3 to 1.3 micrometers and had an absorption peak at 1100 nanometers. The optimized photodetector reached a record EQE value of 58.9% at zero bias, with a corresponding spectral responsivity of 0.53 A/W and a noise current of only 6.19 × 10^-15 A Hz^(-1/2). In addition, this photodetector also has a high linear dynamic range (LDR) of more than 120 dB and a fast response time.

In conclusion, this paper aims to address the deficiencies of existing SWIR OPDs in terms of spectral responsivity, noise current, and exciton dissociation efficiency by designing and synthesizing new types of organic small - molecule acceptors, thereby achieving high - performance SWIR photodetectors.