Abstract:Silicon photomultipliers (SiPMs) are highly-sensitive photodetectors emerging as the technology of choice for many applications, including large high-energy physics experiments where they often are exposed to high radiation fluences. In recent years, there has been an increasing interest in assessing the performance deterioration of such detectors after the irradiation with proton or neutron, with different fluence levels. In this work, samples of different FBK SiPM technologies, made with different manufacturing technologies, were irradiated at the INFN-LNS facility (Italy) with protons reaching fluences up to $10^{12}n_{eq}/mm^2$ (1 MeV neutron equivalent) which correspond $10^{14}n_{eq}/cm^2$ to and their performances were characterized in detail after an approximately 30 days room temperature annealing. The results show a significant worsening of the primary noise (dark count rate) of the detectors, which increases with the irradiation dose, whereas the other performance parameters like the micro-cell gain, the correlated noise probability and the photon detection efficiency do not show significant variations over the investigated dose range. The breakdown voltage estimation after irradiation is another important aspect for a SiPM. In this contribution, we show several methods for its estimation and compare the results. We also introduced new methodologies to characterize the performance of the SiPMs when they present a very high level of noise. Lastly, we also analyzed the spatial localization of the proton-induced defects inside the device, i.e. the defects that mostly contribute to the increase of the DCR of the device, through the emission microscopy (EMMI) technique. In particular, we analyzed the SiPMs at the single cell level, trying to identify and spatially localize the defects.

Characterizing hole trap production due to proton irradiation in germanium cross-strip detectors

Characterizing and correcting electron and hole trapping in germanium cross-strip detectors

Numerical Simulations of Charge Trapping in Germanium Strip Detectors

A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

A beam-driven proton irradiation setup for precision radiation damage tests of silicon detectors

Effect of Proton Irradiation on Extended Wavelength In0.83Ga0.17As Infrared Detector

Investigation of proton irradiation induced E<sub>C</sub>-0.9 eV traps in AlGaN/GaN high electron mobility transistors

Characterization of irradiated p-type silicon detectors for TCAD surface radiation damage model validation

Effect of Very High-Fluence Proton Radiation on 6H-Sic Photoconductive Proton Detectors

Trap-induced Electrical Degradation in Edge-Termination-hardened NiO/β-Ga2O3 Heterojunction under 10 MeV Fluence-Dependent Proton Irradiations

Charge Collection Characterisation with the Transient Current Technique of the Ams H35DEMO CMOS Detector after Proton Irradiation

Study of Neutron-, Proton-, and Gamma-Irradiated Silicon Detectors Using the Two-Photon Absorption–Transient Current Technique

Characterization of Silicon Photomultipliers after proton irradiation up to $10^{12} n_{eq}/mm^2$

Electrical Characterization of Type II Superlattice Midwave Infrared Photodetectors Irradiated by Protons

TCAD simulations of internal amplification in high purity germanium detectors

Investigation of proton radiation damage effects on the n-Fz DSSSD for the Phase I Upgrade of new Si Tracker at the R3B experiment

5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si1-xGex Alloys

Radiation Damage of $2 \times 2 \times 1 \ \mathrm{cm}^3$ Pixelated CdZnTe Due to High-Energy Protons

Amorphous silicon detectors for proton beam monitoring in FLASH radiotherapy

Analytical Fitting of Gamma-ray Photopeaks in Germanium Cross Strip Detectors