Electron transport in bilayer graphene nano constrictions patterned using AFM nanolithography

Robert W. Rienstra,Nishat Sultana,En-Min Shih,Evan Stocker,Kenji Watanabe,Takashi Taniguchi,Curt A. Richter,Joseph Stroscio,Nikolai Zhitenev,Fereshte Ghahari

2024-12-12

Abstract:Here we report on low temperature transport measurements of encapsulated bilayer graphene nano constrictions fabricated employing electrode-free AFM-based local anodic oxidation (LAO) nanolithography. This technique allows for the creation of constrictions as narrow as 20 nm much smaller than previous studies. In wider constrictions, we observe bulk transport characteristics. However, as the constriction's width is reduced, a transport gap appears. Single quantum dot (QD) formation is observed within the narrowest constriction with addition energies exceeding 100 meV, which surpass previous experiments on patterned QDs. Our results suggest that transport through these narrow constrictions is governed by edge disorder combined with quantum confinement effects. Our findings introduce electrode-free AFM-LAO lithography as an easy and flexible method for creating nanostructures with tunable electronic properties without relying on patterning techniques such as e-beam lithography. The excellent control and reproducibility provided by this technique opens exciting opportunities for carbon-based quantum electronics and spintronics.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the electron transport properties in bilayer graphene nano - constriction structures by using the atomic force microscope (AFM) - based electrode - free local anodic oxidation (LAO) nano - etching technique. Specifically, the authors focus on the following points:

1. **Preparation of nano - constriction structures**: Use the AFM - LAO technique to create nano - constriction structures with adjustable widths in bilayer graphene. This technique allows the creation of very narrow (as narrow as 20 nm) structures, which are smaller than those in previous studies.

2. **Changes in electron transport properties**: Study the electron transport properties of these nano - constriction structures at different widths. As the constriction width decreases, a transition from the bulk material transport properties to quantum dot (QD) behavior is observed. In particular, in the narrowest constriction structures, the formation of a single quantum dot is observed, with an additional energy exceeding 100 meV, much higher than the results in previous experiments.

3. **Effects of quantum confinement and edge disorder**: Explore the effects of quantum confinement and edge disorder on electron transport. As the constriction width decreases, a transport gap appears, and in the narrowest structures, a single quantum dot is formed, indicating that the transport is mainly affected by the combined action of edge disorder and quantum confinement effects.

4. **Advantages of the new technique**: A new, electrode - free AFM - LAO nano - etching method is introduced. This method can conveniently and flexibly create nanostructures with adjustable electronic properties without relying on traditional techniques such as complex electron - beam etching. This method simplifies the manufacturing process, improves device yield, and provides new possibilities for applications in carbon - based quantum electronics and spintronics.

In summary, this paper aims to demonstrate a new type of nano - etching technique and, through detailed experimental and theoretical analysis, reveals the electron transport mechanism in bilayer graphene nano - constriction structures and its potential application prospects.