Abstract:Valleytronics, based on the valley degree of freedom rather than charge, is a promising candidate for next-generation information devices beyond complementary metal–oxide–semiconductor (CMOS) technology<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="#ref-CR3">3</a>,<a href="/articles/s41565-020-0727-0#ref-CR4">4</a>. Although many intriguing valleytronic properties have been explored based on excitonic injection or the non-local response of transverse current schemes at low temperature<a href="#ref-CR4">4</a>,<a href="#ref-CR5">5</a>,<a href="#ref-CR6">6</a>,<a href="/articles/s41565-020-0727-0#ref-CR7">7</a>, demonstrations of valleytronic building blocks similar to transistors in electronics, especially at room temperature, remain elusive. Here, we report a solid-state device that enables a full sequence of generating, propagating, detecting and manipulating valley information at room temperature. Chiral nanocrescent plasmonic antennae<a href="/articles/s41565-020-0727-0#ref-CR8">8</a> are used to selectively generate valley-polarized carriers in MoS2 through hot-electron injection under linearly polarized infrared excitation. These long-lived valley-polarized free carriers can be detected in a valley Hall configuration<a href="#ref-CR9">9</a>,<a href="#ref-CR10">10</a>,<a href="/articles/s41565-020-0727-0#ref-CR11">11</a> even without charge current, and can propagate over 18 μm by means of drift. In addition, electrostatic gating allows us to modulate the magnitude of the valley Hall voltage. The electrical valley Hall output could drive the valley manipulation of a cascaded stage, rendering the device able to serve as a transistor free of charge current with pure valleytronic input/output. Our results demonstrate the possibility of encoding and processing information by valley degree of freedom, and provide a universal strategy to study the Berry curvature dipole in quantum materials.

Ultrafast valleytronic logic operations

Picosecond Optical Pulse Processing Using a Terahertz-Bandwidth Reconfigurable Photonic Integrated Circuit

All-Optical Ultrafast Valley Switching in Two-Dimensional Materials

All-optical valley switch and clock of electronic dephasing

Lightwave valleytronics in a monolayer of tungsten diselenide

Valleytronics in bulk MoS 2 with a topologic optical field

Valleytronics in bulk MoS$_2$ by optical control of parity and time symmetries

Lightwave control of topological properties in 2D materials for sub-cycle and non-resonant valley manipulation

Sub-cycle valleytronics: control of valley polarization using few-cycle linearly polarized pulses

Ultrafast all-optical generation of pure spin and valley currents

Ultrafast Manipulation of Valley Pseudospin

Valleytronics in Merging Dirac Cones: All-electric-controlled Valley Filter, Valve, and Universal Reversible Logic Gate

Ultrafast valley-selective coherent optical manipulation with excitons in WSe$_2$ and MoS$_2$ monolayers

Femtosecond switching of strong light-matter interactions in microcavities with two-dimensional semiconductors

A valleytronic diamond transistor: electrostatic control of valley-currents and charge state manipulation of NV centers

Integrated ultrafast all-optical polariton transistors

Floquet-Bloch Valleytronics

Room-temperature valleytronic transistor

Direct coupling of light to valley current

The speed limit of optoelectronics

Valleytronics: Fundamental Challenges and Materials Beyond Transition Metal Chalcogenides