Abstract:Abstract Valleytronics uses valleys, a novel quantum degree of freedom, to encode information. It combines other degrees of freedom, such as charge and spin, to produce a more comprehensive, stable, and efficient information processing system. Valleytronics has become an intriguing field in condensed matter physics due to the emergence of new two-dimensional materials in recent years. However, in nonmagnetic valleytronic materials, the valley polarization is transient and the depolarization occurs once the external excitation is withdrawn. Introduction of magnetic field is an effective approach to realizing the spontaneous valley polarization by breaking the time-reversal symmetry. In hexagonal magnetic valleytronic materials, the inequivalent valleys at the K and – K ( K ′) Dirac cones have asymmetric energy gaps and Berry curvatures. The time-reversal symmetry in nonmagnetic materials can be broken by applying an external magnetic field, adding a magnetic substrate or doping magnetic atoms. Recent theoretical studies have demonstrated that valleytronic materials with intrinsic ferromagnetism, now termed as ferrovalley materials, exhibit spontaneous valley polarization without the need for external fields to maintain the polarization. The coupling of the valley and spin degrees of freedom enables stable and unequal distribution of electrons in the two valleys and thus facilitating nonvolatile information storage. Hence, ferrovalley materials are promising materials for valleytronic devices. In this review, we first briefly overview valleytronics and its related properties, the ways to realize valley polarization in nonmagnetic valleytronic materials. Then we focus on the recent developments in two-dimensional ferrovalley materials, which can be classified according to their molecular formula and crystal structure: MX 2 ; M(XY) 2 , M(XY 2 ) and M(XYZ) 2 ; M 2 X 3 , M 3 X 8 and MNX 6 ; MNX 2 Y 2 , M 2 X 2 Y 6 and MNX 2 Y 6 ; and the Janus structure ferrovalley materials. In the inequivalent valleys, the Berry curvatures have opposite signs with unequal absolute values, leading to anomalous valley Hall effect. When the valley polarization is large, the ferrovalleys can be selectively excited even with unpolarized light. Intrinsic valley polarization in two-dimensional ferrovalley materials is of great importance. It opens a new avenue for information-related applications and hence is under rapid development.

Valleytronics in bulk MoS$_2$ by optical control of parity and time symmetries

Valleytronics in bulk MoS 2 with a topologic optical field

All-optical valley switch and clock of electronic dephasing

Sub-cycle valleytronics: control of valley polarization using few-cycle linearly polarized pulses

Room-Temperature Valley Polarization in Atomically Thin Semiconductors via Chalcogenide Alloying

Robust valley quantum coherence in synthetic 3R -phase MoS2: A material for future valley based devices

Optically and magnetically addressable valley pseudospin of interlayer excitons in bilayer MoS2

Ultrafast Investigation of Room Temperature Valley Polarization in “optical Bilayer” WS 2

Ultrafast Manipulation of Valley Pseudospin

Valley coherent exciton-polaritons in a monolayer semiconductor

Valleytronics in two-dimensional magnetic materials

Optical valley Hall effect for highly valley-coherent exciton-polaritons in an atomically thin semiconductor

All-Optical Ultrafast Valley Switching in Two-Dimensional Materials

Gate-field control of valley polarization in valleytronics

MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect

Valleytronics: Fundamental Challenges and Materials Beyond Transition Metal Chalcogenides

Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures

Valley selective optical control of excitons in 2D semiconductors using Chiral metasurface

Valley-polarized exciton–polaritons in a monolayer semiconductor

Opto-valleytronic imaging of atomically thin semiconductors

Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges