Abstract:SnTe is a potentially attractive thermoelectric because it is the lead-free rock-salt analogue of PbTe. However, SnTe is a poor thermoelectric material because of its high hole concentration arising from inherent Sn vacancies in the lattice and its very high electrical and thermal conductivity. In this study, we demonstrate that SnTe-based materials can be controlled to become excellent thermoelectrics for power generation via the successful application of several key concepts that obviate the well-known disadvantages of SnTe. First, we show that Sn self-compensation can effectively reduce the Sn vacancies and decrease the hole carrier density. For example, a 3 mol % self-compensation of Sn results in a 50% improvement in the figure of merit ZT. In addition, we reveal that Cd, nominally isoelectronic with Sn, favorably impacts the electronic band structure by (a) diminishing the energy separation between the light-hole and heavy-hole valence bands in the material, leading to an enhanced Seebeck coefficient, and (b) enlarging the energy band gap. Thus, alloying with Cd atoms enables a form of valence band engineering that improves the high-temperature thermoelectric performance, where p-type samples of SnCd(0.03)Te exhibit ZT values of ~0.96 at 823 K, a 60% improvement over the Cd-free sample. Finally, we introduce endotaxial CdS or ZnS nanoscale precipitates that reduce the lattice thermal conductivity of SnCd(0.03)Te with no effect on the power factor. We report that SnCd(0.03)Te that are endotaxially nanostructured with CdS and ZnS have a maximum ZTs of ~1.3 and ~1.1 at 873 K, respectively. Therefore, SnTe-based materials could be ideal alternatives for p-type lead chalcogenides for high temperature thermoelectric power generation.

Control of sphalerite-chalcopyrite phase transition in CdSnAs2 for n-type thermoelectrics with high power factor

High thermoelectric performance of p-type SnTe via a synergistic band engineering and nanostructuring approach

Realizing High Thermoelectric Performance in P-Type SnSe Through Crystal Structure Modification

Realizing high-ranged thermoelectric performance in PbSnS2 crystals

Realizing High‐Ranged Out‐of‐Plane ZTs in N‐Type SnSe Crystals through Promoting Continuous Phase Transition

Stepwise Optimization of Thermoelectric Performance in n‐Type SnS

High Thermoelectric Performance SnTe with a Segregated and Percolated Structure

Thermoelectric SnTe with Band Convergence, Dense Dislocations, and Interstitials Through Sn Self-Compensation and Mn Alloying.

High thermoelectric performance in ZnSb-SnTe pseudo-binary materials

High-Ranged <i>ZT</i> Value Promotes Thermoelectric Cooling and Power Generation in n-Type PbTe

High Thermoelectric Performance of SnTe Via in Doping and Cu1.75Se Nanostructuring Approach

Adjusting Na Doping Via Wet-Chemical Synthesis to Enhance Thermoelectric Properties of Polycrystalline SnS

Ordered Grain Boundary Reconstruction Induces High-Efficiency Thermoelectric Power Generation in SnTe

High Thermoelectric Performance of N-Type PbTe1−S Due to Deep Lying States Induced by Indium Doping and Spinodal Decomposition

Modulation Doping Enables Ultrahigh Power Factor and Thermoelectric ZT in n‐Type Bi 2 Te 2.7 Se 0.3

High Thermoelectric Performance Via Hierarchical Compositionally Alloyed Nanostructures.

Realizing High In-plane Carrier Mobility in N-type SnSe Crystals through Deformation Potential Modification

Dense twin and domain boundaries lead to high thermoelectric performance in Sn-doped Cu 3 SbS 4

Investigation of thermoelectric properties in binary Sb-Te and Sn-Te alloys during crystallization process

Enhanced thermoelectric performance of highly oriented polycrystalline SnSe based composites incorporated with SnTe nanoinclusions

Enhanced Band Convergence and Ultra-Low Thermal Conductivity Lead to High Thermoelectric Performance in SnTe