Photon drag at the junction between metal and 2d semiconductor

Dmitry Svintsov,Zhanna Devizorova

2024-11-21

Abstract:Photon drag represents a mechanism of photocurrent generation wherein the electromagnetic (EM) field momentum is transferred directly to the charge carriers. It is believed to be small by the virtue of low photon momentum compared to the typical momenta of the charge carriers. Here, we show that photon drag becomes particularly strong at the junctions between metals and 2d materials, wherein highly non-uniform local EM fields are generated upon diffraction. To this end, we combine an exact theory of diffraction at 'metal-2d material' junctions with microscopic transport theory of photon drag, and derive the functional dependences of the respective photovoltage on the parameters of EM field and 2d system. The voltage responsivity appears inversely proportional to the electromagnetic frequency $\omega$, the sheet density of charge, and a dimensionless momentum transfer coefficient $\alpha$ which depends only on 2d conductivity in units of light speed $\eta = 2\pi \sigma/c$ and light polarization. For $p$-polarized incident light, the momentum transfer coefficient appears finite even for vanishingly small 2d conductivity $\eta$, which is a consequence of dynamic lightning rod effect. For $s$-polarized incident light, the momentum transfer coefficient scales as $\eta \ln \eta^{-1}$, which stems from long-range dipole radiation of a linear junction. A simple estimate shows that the ratio of thermoelectric and photon drag photovoltages at the junction for $p$-polarization is roughly $\omega\tau_\varepsilon$, where $\tau_\varepsilon$ is the energy relaxation time, while for $s$-polarization the photon drag always dominates over the thermoelectric effect.

Mesoscale and Nanoscale Physics,Optics

What problem does this paper attempt to address?

### What problems does this paper attempt to solve?

This paper aims to explore and explain the significant enhancement of the photon drag (PD) effect at the junction between metals and two - dimensional semiconductors (2D semiconductor). Specifically, the paper addresses the following key issues:

1. **Photon momentum transfer mechanism**:
- Photon drag refers to the phenomenon where the electromagnetic field momentum is directly transferred to charge carriers, thereby generating a photocurrent. Traditionally, it is considered that this effect is usually weak due to the relatively small photon momentum.
- However, this paper points out that at the junction between metals and two - dimensional materials, due to the existence of inhomogeneous local electromagnetic fields, the photon drag effect becomes particularly strong.

2. **Theoretical framework and formula derivation**:
- The paper combines the exact diffraction theory and the microscopic transport theory to derive in detail the functional relationship between the photovoltage generated by photon drag and the electromagnetic field parameters and the two - dimensional system parameters.
- Key formulas include the expressions for the photon drag force density \( f_{pd} \) and the photon drag photovoltage \( V_{pd} \), which show how to extract useful physical information from the local structure of the electromagnetic field.

3. **Polarization dependence**:
- For p - polarized incident light, the photon drag coefficient \( \alpha_x \) tends to a constant when the two - dimensional conductivity \( \eta \) approaches zero, which is caused by the dynamic lightning rod effect.
- For s - polarized incident light, the photon drag coefficient \( \alpha_y \) changes with \( \eta \ln \eta^{-1} \), which originates from long - range dipole radiation.

4. **Experimental relevance**:
- The research results are of great significance for explaining terahertz detection experiments in sub - wavelength structures. For example, in the far - infrared range (\( \lambda_0 = 10\ \mu m \)), even for the shortest energy relaxation time \( \tau_\varepsilon = 0.1\ ps \), it can be observed that \( \omega \tau_\varepsilon \gg 1 \), indicating that the photon drag effect can exceed the thermoelectric effect.

5. **Application prospects**:
- The theory proposed in this paper is applicable not only to graphene but also to other two - dimensional electron systems (2DES), such as III - V and II - VI quantum wells and transition metal chalcogenides, etc. This provides a theoretical basis for the future design of high - efficiency optoelectronic devices.

### Summary

By combining the exact electromagnetic theory and the microscopic transport theory, this paper reveals the significant enhancement mechanism of the photon drag effect at the junction between metals and two - dimensional semiconductors, and verifies this phenomenon through detailed mathematical derivations and numerical simulations. The research results not only deepen the understanding of the photon drag effect but also provide new ideas for the development of high - performance optoelectronic devices.