Abstract:The nanosized boron vacancy ($V_\mathrm{B}^-$) defect spot in hexagonal boron nitride ($h$-BN) is promising for a local magnetic field quantum sensor. One of its advantages is that a helium-ion microscope can make a spot at any location in an $h$-BN flake with nanometer accuracy. In this study, we investigate the properties of the created nanosized $V_\mathrm{B}^-$ defect spots by systematically varying three conditions: the helium-ion dose, the thickness of the $h$-BN flakes, and the substrate on which the $h$-BN flakes are attached. The physical background of the results obtained is successfully interpreted using Monte Carlo calculations. From the findings obtained here, a guideline for their optimal creation conditions is obtained to maximize its performance as a quantum sensor concerning sensitivity and localization.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to systematically study the characteristics of nanoscale boron vacancy (V$_B^-$) defect points created in hexagonal boron nitride (h - BN) by helium - ion microscopy (HIM). Specifically, the author hopes to explore the properties of these defect points and optimize their performance as quantum sensors by systematically changing three conditions - helium - ion dose, the thickness of h - BN flakes, and the substrate to which the h - BN flakes are attached. ### Main problems 1. **Optimizing the performance of quantum sensors**: How to maximize the sensitivity and positioning accuracy of V$_B^-$ defect points as quantum sensors by adjusting the helium - ion dose, the thickness of h - BN flakes, and the type of substrate. 2. **Understanding the physical mechanisms of defect points**: Through experiments and Monte Carlo simulations, explain the formation mechanisms of V$_B^-$ defect points under different conditions and their impact on sensor performance. 3. **Exploring the substrate effect**: Study the influence of different substrates (such as gold (Au) and silicon dioxide (SiO$_2$)) on performance parameters such as the photoluminescence intensity and spin - relaxation time of V$_B^-$ defect points. ### Research background In recent years, quantum sensors based on boron vacancy (V$_B^-$) defect points in boron nitride have attracted much attention due to their high sensitivity and nanoscale positioning ability. However, to fully realize the potential of these sensors, an in - depth understanding of their manufacturing methods and working configurations is required. Previous studies have shown that helium - ion microscopy can create V$_B^-$ defect points at specified positions with nanoscale precision, but systematic research is still insufficient, especially in terms of the comprehensive effects of h - BN flakes of different thicknesses and different substrates in practical applications. ### Methods and results - **Experimental design**: By changing the helium - ion dose (from 10$^{14}$ to 10$^{17}$ cm$^{-2}$), the thickness of h - BN flakes (9 nm, 47 nm, 256 nm), and the type of substrate (Au and SiO$_2$), the optical and spin characteristics of V$_B^-$ defect points were systematically studied. - **Key findings**: - For 47 - nm - thick h - BN flakes, when using a helium - ion dose of 10$^{16}$ cm$^{-2}$ on an Au substrate, the static magnetic field sensitivity is the best, reaching 30.2 µT/√Hz. - Increasing the helium - ion dose will lead to an increase in strain, thus affecting the performance of the sensor. - The signal intensity on the Au substrate is significantly higher than that on the SiO$_2$ substrate, but the spin - relaxation time is shorter. - **Theoretical support**: The influence of ion back - scattering effects on defect formation was explained through Monte Carlo simulations, and the experimental results were verified. ### Conclusion This study provides important guiding principles for creating high - performance V$_B^-$ quantum sensors using helium - ion microscopy. By optimizing the helium - ion dose, the thickness of h - BN flakes, and the substrate selection, the sensitivity and positioning accuracy of the sensor can be significantly improved, thereby promoting its further development in magnetic imaging and other quantum sensing applications.

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