Abstract:Abstract Point defects in wide-bandgap semiconductors, such as hexagonal boron nitride (h-BN), have driven enormous amounts of research due to their interesting optical properties such as quantum emission at room temperature. Defect engineering by particle irradiation is a very interesting strategy for producing quantum emitters in a controlled way. The identification of most point defects is done by electron paramagnetic resonance and related advanced techniques. Following our recent works, we present new data about point defects produced by neutron irradiation at room temperature and investigate their thermal stability in crystalline, flake and ultrafine h-BN powder. Our experimental data indicate the formation of the nitrogen antisite defect next to a nitrogen vacancy in its neutral charge state, (N B V N ) 0 , with spin S = 1/2 in all types of h-BN showing strong axial hyperfine interaction ( A || ≈ 95 MHz and A ⊥ ≈ 5 MHz). It is thermally stable up to ~600 oC, which is similar to the disappearance of the negative charged boron vacancy, V B − . In addition, after neutron irradiation of h-BN powder samples, a spin S = 1/2 point defect is observed presenting an axial superhyperfine interaction with two equivalent nitrogen nuclei ( 14 N, I = 1, 99.68%), which we tentatively assign to the C N V B defect. It is thermally stable up to ~850 oC. Another, yet-unidentified S = 1/2 center acts as a charge compensating defect at specific annealing temperatures. Our experimental results are compared and discussed with theoretical models available in the literature.

Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride

Isotope engineering for spin defects in van der Waals materials

Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride

Boron and nitrogen isotope effects on hexagonal boron nitride properties

Magnetic field imaging by hBN quantum sensor nanoarray

Temperature dependent spin-phonon coupling of boron-vacancy centers in hexagonal boron nitride

Decoherence of V[Formula: see text] spin defects in monoisotopic hexagonal boron nitride

Engineering Boron Vacancy Defects in Boron Nitride Nanotubes

Magnetic Imaging with Spin Defects in Hexagonal Boron Nitride

Systematic characterization of nanoscale $h$-BN quantum sensor spots created by helium-ion microscopy

Optimisation of electron irradiation for creating spin ensembles in hexagonal boron nitride

Isotope engineering of van der Waals interactions in hexagonal boron nitride

Identification and thermal stability of point defects in neutron-irradiated hexagonal boron nitride (h-BN)

Proximity-Induced Exchange Interaction: a New Pathway for Quantum Sensing using Spin Centers in Hexagonal Boron Nitride

Coherent dynamics of strongly interacting electronic spin defects in hexagonal boron nitride

Isotope effect on band gap and radiative transitions properties of boron nitride nanotubes.

Quantum sensing and imaging with spin defects in hexagonal boron nitride

Optically-active spin defects in few-layer thick hexagonal boron nitride

Magnetic field dependence of $V_B^-$ Defects in hexagonal boron nitride

Control of the phonon band gap with isotopes in hexagonal boron nitride

Boron Isotope Effects on Raman Scattering in Bulk BN, BP, and BAs: A Density-Functional Theory Study