A. D. Levin,G. M. Gusev,V. A. Chitta,A. S. Jaroshevich,A. K. Bakarov
Abstract:We investigated magnetotransport in mesoscopic samples containing electrons from three different subbands in GaAs triple wells. At high temperatures, we observed positive magnetoresistance, which we attribute to the imbalance between different types of particles that are sensitive to bulk viscosities. At low temperatures, we found negative magnetoresistance, attributed to shear viscosity. By analyzing the magnetoresistance data, we were able to determine both viscosities. Remarkably, the electronic bulk viscosity was significantly larger than the shear viscosity. Studying multicomponent electron systems in the hydrodynamic regime presents an intriguing opportunity to further explore the physics in systems with high bulk viscosity.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: in multi - component two - dimensional electron systems, especially in the GaAs triple - well structure, to study the influence of bulk viscosity and shear viscosity on the magnetic transport characteristics. Specifically, the author experimentally observed the positive magnetoresistance at high temperatures and the negative magnetoresistance at low temperatures, and attempted to determine the magnitudes of these two viscosities by analyzing these phenomena.
### Research Background and Problems
1. **Background**:
- Under strong electron - electron scattering conditions, the transport behavior of two - dimensional electron systems can be described by the viscous hydrodynamics framework.
- In recent years, it has been found that the bulk viscosity in multi - component electron systems may be significantly greater than the shear viscosity, which is of great significance for understanding the hydrodynamic behavior of electron systems.
2. **Specific Problems**:
- **Positive Magnetoresistance at High Temperatures**: At high temperatures, the author observed the positive magnetoresistance phenomenon and attributed it to the imbalance between different types of particles, and this imbalance is sensitive to the bulk viscosity.
- **Negative Magnetoresistance at Low Temperatures**: At low temperatures, the author observed the negative magnetoresistance phenomenon and attributed it to the influence of shear viscosity.
- **Viscosity Measurement**: By analyzing the magnetoresistance data, the author hopes to determine the specific values of the bulk viscosity and shear viscosity and verify the theoretical predictions.
### Main Research Contents
- **Experimental Design**:
- Use samples of the GaAs triple - well structure, which contain electrons from three different sub - bands.
- By changing the temperature and magnetic field intensity, measure the change in magnetoresistance of the samples.
- **Theoretical Model**:
- With the help of previous research results, the author proposed a theoretical model applicable to multi - component electron systems, which takes into account the scattering between electrons and the transitions between different sub - bands.
- The concepts of bulk viscosity and shear viscosity are introduced into the model, and their influence on magnetoresistance is described by formulas.
### Conclusions
- Through the comparison of experimental data and theoretical models, the author successfully determined the values of the bulk viscosity and shear viscosity.
- It was found that the bulk viscosity is significantly greater than the shear viscosity, which provides a new way to study the physical phenomena of high bulk viscosity.
- The research results are helpful for further exploring the hydrodynamic behavior in multi - component electron systems, especially the role of bulk viscosity therein.
### Formula Display
The formulas involved in the paper include:
1. **Shear Viscosity Formula**:
\[
\eta=\frac{1}{4}v_F^2\tau_{2,ee}
\]
where \(v_F\) is the Fermi velocity and \(\tau_{2,ee}\) is the shear stress relaxation time caused by electron - electron scattering.
2. **Total Conductivity Formula**:
\[
\sigma_{\text{hydr}}(T,B)=\frac{e^2n_{\text{tot}}}{m^*}\left(\frac{n_1^*}{n_{\text{tot}}\eta_1}+\frac{n_2}{n_{\text{tot}}\eta_2}\right)\left\{\frac{W^2}{12}+\frac{2\zeta\lambda}{\omega_c^2}\frac{n_1^*n_2(\eta_1 - \eta_2)^2}{n_{\text{tot}}(n_1^*\eta_1 + n_2\eta_2)}\Re e\left[\sqrt{i}\tanh\left(\frac{\sqrt{i}\lambda W}{2}\right)\right]\right\}
\]
where \(\lambda = \sqrt{\frac{\zeta}{\eta}}\), \(\omega_c=\frac{eB}{mc}\) is the cyclotron frequency, \(n_{\text{tot}}\) is the total carrier concentration, and \(\eta_i\) and \(n_i\) are respectively the...