Abstract:Vortices are the hallmarks of hydrodynamic flow. Recent studies indicate that strongly-interacting electrons in ultrapure conductors can display signatures of hydrodynamic behavior including negative nonlocal resistance, Poiseuille flow in narrow channels, and a violation of the Wiedemann-Franz law. Here we provide the first visualization of whirlpools in an electron fluid. By utilizing a nanoscale scanning superconducting quantum interference device on a tip (SQUID-on-tip) we image the current distribution in a circular chamber connected through a small aperture to an adjacent narrow current carrying strip in high-purity type-II Weyl semimetal WTe2. In this geometry, the Gurzhi momentum diffusion length and the size of the aperture determine the vortex stability phase diagram. We find that the vortices are present only for small apertures, whereas the flow is laminar (non-vortical) for larger apertures, consistent with the theoretical analysis of the hydrodynamic regime and in contrast to the expectations of ballistic transport in WTe2 at low temperatures. Moreover, near the vortical-to-laminar transition, we observe a single vortex in the chamber splitting into two vortices, a behavior that can occur only in the hydrodynamic regime and cannot be sustained by ballistic transport. These findings suggest a novel mechanism of hydrodynamic flow: instead of the commonly considered electron-electron scattering at the bulk, which becomes extremely weak at low temperatures, the spatial diffusion of charge carriers' momenta is enabled by small-angle scattering at the planar surfaces of thin pure crystals. This surface-induced para-hydrodynamics opens new avenues for exploring and utilizing electron fluidics in high-mobility electron systems.

Quantitative measurement of viscosity in two-dimensional electron fluids

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Micromagnets dramatically enhance effects of viscous hydrodynamic flow in two-dimensional electron fluid

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Direct observation of vortices in an electron fluid

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Dissipation-enabled Hydrodynamic Conductivity in a Tunable Bandgap Semiconductor.

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