Abstract:The advent of wurtzite ferroelectrics is enabling a new generation of ferroelectric devices for computer memory that has the potential to bypass the von Neumann bottleneck, due to their robust polarization and silicon compatibility. However, the microscopic switching mechanism of wurtzites is still undetermined due to the limitations of density functional theory simulation size and experimental temporal and spatial resolution. Thus, physics-informed materials engineering to reduce coercive field and breakdown in these devices has been limited. Here, the atomistic mechanism of domain wall migration and domain growth in wurtzites is uncovered using molecular dynamics and Monte Carlo simulations of aluminum nitride. We reveal the anomalous switching mechanism of fast 1D single columns of atoms propagating from a slow-moving 2D fractal-like domain wall. We find that the critical nucleus in wurtzites is a single aluminum ion that breaks its bond with one nitrogen and bonds to another nitrogen; this creates a cascade that only flips atoms directly in the same column, due to the extreme locality (sharpness) of the domain walls in wurtzites. We further show how the fractal shape of the domain wall in the 2D plane breaks assumptions in the KAI model and leads to the anomalously fast switching in wurtzite structured ferroelectrics.

What problem does this paper attempt to address?

The problem this paper attempts to address is the uncertainty regarding the microscopic domain wall migration and domain growth mechanisms in wurtzite aluminum nitride (AlN) ferroelectric materials. Specifically, the study aims to uncover the unique mechanisms during polarization reversal in wurtzite-structured ferroelectric materials, which possess high thermal conductivity and good silicon compatibility but also exhibit extremely high coercive field strength (>3MV/cm), limiting their applications. Through molecular dynamics and Monte Carlo simulations, the researchers hope to understand why the traditional Kolmogorov-Avrami-Ishibashi (KAI) model is not applicable to this material and explore how to reduce the coercive field strength through material engineering to improve its performance. Key findings of the paper include: 1. **Unique mechanism of domain wall migration**: The domain wall migration in wurtzite AlN is achieved by a single aluminum ion breaking a bond with one nitrogen atom and forming a new bond with another nitrogen atom. This mechanism leads to the rapid propagation of one-dimensional single-file atoms, which emanate from the slowly moving two-dimensional fractal-shaped domain walls. 2. **Formation of fractal domain walls**: The study shows that the fractal shape of the domain walls in the two-dimensional plane breaks the assumptions of the KAI model, resulting in the abnormally fast polarization reversal in wurtzite-structured ferroelectric materials. 3. **Validation of microscopic mechanisms**: Through large-scale molecular dynamics simulations, the researchers validated this microscopic mechanism and further demonstrated through Monte Carlo simulations that the experimentally observed anomalous switching dynamics are an intrinsic feature of this fractal mechanism, rather than being due to a time-dependent nucleation rate. These findings not only enhance the understanding of the microscopic mechanisms in wurtzite ferroelectric materials but also provide a theoretical basis for future material engineering to optimize the performance of these materials.

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