Interband contributions to nonlinear transport in semiconductor nanostructures

Kazuki Nakazawa,Henry F. Legg,Jelena Klinovaja,Daniel Loss

2024-10-23

Abstract:Spin-orbit interaction (SOI) is a crucial ingredient for many potential applications of quantum devices, such as the use of semiconductor nanostructures for quantum computing. It is known that nonlinear conductivities are sensitive to the strength and type of SOI, however, many calculations of nonlinear transport coefficients are based on the semiclassical Boltzmann theory and make simplifying assumptions about scattering effects due to disorder. In this paper we develop and employ a microscopic theory based on the Keldysh formalism that goes beyond simple semiclassical approximations. This approach, for instance, naturally takes into account the effects of interband transitions, Berry curvature, and allows for a more precise treatment of impurity scattering. As a test of this formalism, we consider the nonlinear transport properties in an effective two-band model of one-dimensional nanowires (1DNWs) and two-dimensional hole gases (2DHGs) in the presence of a magnetic field causing Zeeman splittings of the spin states. We find that the small energy scales in nanostructures mean that interband contributions can be relevant, especially in the dirty limit, and therefore could modify qualitative features found using a purely semiclassical approach. Nonetheless, we find that different types of SOI (linear or cubic) still result in remarkably pronounced different in-plane field angle dependences, which survive even when interband effects are relevant. Our results provide a detailed understanding of when interband effects become important for nonlinear transport and can serve as the basis for a microscopic description to predict other nonlinear transport effects in materials and devices.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

### What problems does this paper attempt to solve?

This paper aims to explore the inter - band contributions to nonlinear transport in semiconductor nanostructures. Specifically, the authors focus on the influence of spin - orbit interaction (SOI) in these systems and attempt to go beyond the traditional semiclassical Boltzmann theory to describe the nonlinear transport characteristics more accurately.

#### Main research questions:
1. **Influence of inter - band transitions**: Many calculations of nonlinear transport coefficients are based on the semiclassical Boltzmann theory and make simplified assumptions about the scattering effects caused by disorder. In this paper, a microscopic theory is developed and applied by introducing the Keldysh formalism, which naturally takes into account effects such as inter - band transitions and Berry curvature, thus providing a more accurate treatment method.

2. **Nonlinear transport characteristics**: The authors study the nonlinear transport properties of an effective two - band model in the presence of Zeeman splitting caused by a magnetic field in one - dimensional nanowires (1DNWs) and two - dimensional hole gases (2DHGs). They find that the small energy scale in nanostructures can cause the inter - band contributions to become significant, especially in the "dirty" limit (i.e., short relaxation time), which may change the qualitative features obtained using the pure semiclassical method.

3. **Different types of spin - orbit interaction (SOI)**: The authors study the influence of different types of SOI (linear and cubic) on the nonlinear transport characteristics. Although the inter - band effects become important, different types of SOI still show a distinct dependence on the in - plane field angle.

4. **Predict other nonlinear transport effects**: By establishing a detailed microscopic description, the authors provide a basis for predicting nonlinear transport effects in other materials and devices.

### Formula summary

The key formulas involved in the paper include:

- **Expression of the current operator**:
\[
\langle \hat{j}_i \rangle = -\frac{i}{2} \text{tr}[\hat{j}_i \hat{G}_K]
\]
where $\hat{G}_K$ is the Keldysh Green's function and $\text{tr}$ represents the trace over all degrees of freedom (such as momentum, frequency, spin and orbit).

- **Expression of the second - order nonlinear conductivity**:
\[
\langle \hat{j}^{(2)}_\alpha \rangle = \sigma_{\alpha\beta\gamma} E_\beta E_\gamma
\]
where
\[
\sigma_{\alpha\beta\gamma} = (\sigma^{RRA}_{\alpha\beta\gamma} + \sigma^{RA}_{\alpha\beta\gamma} + \sigma^{RRR}_{\alpha\beta\gamma} + \sigma^{RR}_{\alpha\beta\gamma}) E_\beta E_\gamma
\]

- **Born approximation of the self - energy term**:
\[
\hat{\Sigma}^R(\varepsilon) = n_i u^2 \sum_k \hat{g}^R_k(\varepsilon)
\]
where $\hat{g}^R_k(\varepsilon) = (\varepsilon - \hat{H}_k + i0^+)^{-1}$ is the bare retarded Green's function and $n_i = N_i / V$ is the impurity concentration.

- **Decomposition of intra - band and inter - band contributions**:
\[
\sigma^{RRA}_{\alpha\beta\gamma} \equiv \sigma^{RRA,\text{intra}}_{\alpha\beta\gamma} + \sigma^{RRA,\text{inter}}_{\alpha\beta\gamma}
\]
\[
\sigma^{RA}_{\alpha\beta\gamma} \equiv \sigma^{RA,\text{intra}}_{\alpha\beta\gamma} + \sigma^{RA,\text{inter}}_{\alpha\beta\gamma}
\]