Abstract:This work presents a notable electro‐optic (EO) coefficient of up to 286 pm V−1 stemming from domain engineering in epitaxial BaTiO3 (BTO) thin films. In situ domain dynamics in BTO films are analyzed by the Second Harmonic Generation optical probe. These findings provide insights into the contribution of domain variants to the EO response and promote the development of silicon‐based heterogeneously integrated devices. In silicon photonics, BaTiO3 (BTO) emerges as a promising electro‐optic (EO) integrated material due to its excellent EO modulation capabilities. Nevertheless, the EO response of multi‐domain BTO thin films tends to be lower than that of bulk materials. BTO thin films are fabricated with strong EO responses utilizing the pulsed laser deposition technique. Considering the importance of the SrTiO3 (STO) buffer layer, a series of epitaxial BTO thin films are deposited on STO substrates with engineered domain alignment. Given the contribution of domain variants in BTO thin films to their EO response, specific electrode patterns are designed to enhance their performance. An effective Pockels coefficient of 286 pm V−1 is determined for the BTO thin film via the transmission geometry method, which surpasses recent reports. Through domain engineering in the BTO thin film, the remarkable enhancement in the EO response arising from in‐plane polarization (a‐axis) characteristics is confirmed. Simultaneously, utilizing the Second Harmonic Generation (SHG) optical probe, deep exploration into the domain dynamics within BTO thin films is conducted. These findings provide insights into the contribution of domain variants to the EO response and shed light on further developing silicon‐based heterogeneously integrated devices.

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Study of the Electric Field-Induced Domain Structure Transformation in BaTiO3 Ceramics by High Resolution Methods

Composition, Electric-Field and Temperature Induced Domain Evolution in Lead-Free Bi0.5Na0.5TiO3-BaTiO3-SrTiO3 Solid Solutions by Piezoresponse Force Microscopy

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Extrinsic Dielectric Response due to Domain Wall Motion in Ferroelectric BaTiO$_3$

Dynamics and Manipulation of Ferroelectric Domain Walls in Bismuth Ferrite Thin Films.

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Dynamic stability of nano-scale ferroelectric domains by molecular dynamics modeling

Crack propagation induced by incompatible domain switching in BaTiO3 crystal under electric field loading

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Direct observations of electric-field-induced domain switching and phase transition in 0.95Na 0.5 Bi 0.5 TiO 3 -0.05BaTiO 3 single crystals using in situ transmission electron microscopy

Imaging and Quantification of Charged Domain Walls in BiFeO3

Behavior of strain stripe networks in barium titanate nanocrystals on crossing its ferroelectric phase transition

Enhanced Electro‐Optic Coefficients in Single‐Crystalline BaTiO3 Thin Films Enabled by Domain Alignment

Domain Wall Dynamics in Tungsten Trioxide: Evidence for Polar Domain Walls

Field Enhancement of Electronic Conductance at Ferroelectric Domain Walls

The size and strain effects on the electric-field-induced domain evolution and hysteresis loop in ferroelectric BaTiO3 nanofilms