Abstract:Resistive random access memory (ReRAM) is a promising emerging non-volatile memory (NVM) technology that shows high potential for both data storage and computing. However, its crossbar array architecture leads to the sneak path problem, which may severely degrade the reliability of data stored in the ReRAM cell. Due to the complication of memory physics and unique features of the sneak path induced interference (SPI), it is difficult to derive an accurate channel model for it. The deep learning (DL)-based detection scheme \cite{zhong2020sneakdl} can better mitigate the SPI, at the cost of additional power consumption and read latency. In this letter, we first propose a novel CC scheme which can not only reduce the SPI in the memory array, but also effectively differentiate the memory arrays into two categories of sneak-path-free and sneak-path-affected arrays. For the sneak-path-free arrays, we can use a simple middle-point threshold detector to detect the low and high resistance cells of ReRAM. For the sneak-path-affected arrays, a DL detector is first trained off-line (prior to the data detection of ReRAM). To avoid the additional power consumption and latency introduced by the DL detector, we further propose a DL-based threshold detector, whose detection threshold can be derived based on the outputs of the DL detector. It is then utilized for the online data detection of all the identified sneak-path-affected arrays. Simulation results demonstrate that the above CC and DL aided threshold detection scheme can effectively mitigate the SPI of the ReRAM array and achieve better error rate performance than the prior art detection schemes, without the prior knowledge of the channel.

Maximum Achievable Rate of Resistive Random-Access Memory Channels by Mutual Information Spectrum Analysis

Performance Limit and Coding Schemes for Resistive Random-Access Memory Channels

Sneak Path Interference-Aware Adaptive Detection and Decoding for Resistive Memory Arrays

Performance Analysis and Code Design for Resistive Random-Access Memory Using Channel Decomposition Approach

Quantization Design for Resistive Memories With Multiple Reads

Across-Array Coding for Resistive Memories with Sneak-Path Interference and Lognormal Distributed Resistance Variations

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

Modeling and Simulation of an Improved Resistive Random Access Memory Array

Fully Coupled Electrothermal Simulation of Resistive Random Access Memory (RRAM) Array

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Signal Integrity Analysis for Resistive Random Access Memory Crossbar Array by Compact Model with Consideration of Electro-Thermal Coupling Effects

Polar Code Construction for Resistive Memories With Sneak-Path Interference

A 2mb Reram with Two Bits Error Correction Codes Circuit for High Reliability Application

Circuit Modeling for RRAM-Based Neuromorphic Chip Crossbar Array with and Without Write-Verify Scheme.

Impact of the Interconnection Structure on RRAM-Based Crossbar Array in Neuromorphic Chip

Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays

Constrained Coding and Deep Learning Aided Threshold Detection for Resistive Memories

Impact of resistive switching parameters on resistive random access memory crossbar arrays

Union Bound Analysis for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM) With Channel Quantization

The storage mechanism of resisitive random access