Abstract:It is shown that spin valves under suitable symmetry conditions exhibit an ON-OFF response to a spin battery. While a spin valve driven by a charge battery displays the usual GMR (Giant Magneto-Resistance), a pure spin current or pure spin accumulation can generate an infinite magneto-resistance effect(IMR). In practice the effect is curtailed by asymmetry but the achievable magneto-resistance ratio is still predicted to be unusually large in several example setups. It is closely related to the bipolar effect (BE) of Johnson transistor which can be triggered under the same symmetry conditions.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore and realize a new magnetoresistive effect, namely Infinite Magneto - Resistance (IMR), and to discuss its relationship with the Bipolar Effect (BE). Specifically: 1. **Limitations of Traditional Giant Magneto - Resistance (GMR)**: - The traditional GMR effect depends on specific materials (such as half - metals or MgO tunnel barriers) to increase the magnetoresistance ratio. However, the application range of these materials is limited, and it is difficult to achieve a higher magnetoresistance ratio. 2. **Introduction of the Concept of Infinite Magneto - Resistance (IMR)**: - The paper proposes a new magnetoresistive effect - Infinite Magneto - Resistance (IMR). By using a spin battery instead of a charge battery to drive the spin valve, a theoretically infinite magnetoresistance ratio can be achieved under specific symmetry conditions. - The formula is expressed as: \[ \text{IMR}=\frac{V_{\text{HI}} - V_{\text{LO}}}{V_{\text{LO}}}\to\infty \] - In practice, due to the influence of asymmetry, although the magnetoresistance ratio cannot reach infinity, it can still be very high. 3. **Association with the Bipolar Effect (BE)**: - IMR is closely related to the bipolar effect in Johnson's proposed Bipolar Spin Transistor (BST). Triggered by symmetry conditions, both can occur simultaneously. - The bipolar effect is manifested as the reversal of the polarity of the voltage signal with the change of the magnetization direction, and the formula is: \[ V_c\propto\text{sgn}(M_z) \] 4. **Experimental Verification and Application Prospects**: - The paper proposes several specific experimental devices, such as the twin system, the CPP sandwich structure, etc., to verify the existence of IMR and BE. - In terms of application, IMR and BE are expected to be used in more sensitive magnetic sensors, which is of great significance for experimentally confirming these predictions. In summary, this paper aims to achieve a high magnetoresistance ratio far beyond that of traditional GMR by introducing spin batteries and using symmetry, and to explore its potential application value.

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