Abstract:Termination of the fractional quantum Hall states (FQHSs) and the emergence of Wigner crystal phases at very small Landau level filling factors ($\nu$) have been of continued interest for decades. Recently, in ultra-high-quality, dilute GaAs 2D electron systems (2DESs), strong evidence was reported for FQHSs at $\nu=1/7, 2/13$ and 2/11 which fall in the $\nu = p/(6p\pm1)$ Jain series of FQHSs, interpreted as integer ($p = 1$, 2) QHSs of 6-flux composite fermions ($^6$CFs). These states are surrounded by strongly-insulating phases which are generally believed to be Wigner crystals. Here, we study an ultra-high-quality 2DES confined to an AlAs quantum well where the 2D electrons have a much larger effective mass ($m^*\simeq 0.45 m_e$) and a smaller dielectric constant ($\epsilon\simeq10\epsilon_0$) compared to GaAs 2D electrons ($m^*\simeq 0.067 m_e$ and $\epsilon\simeq13\epsilon_0$). This combination of $m^*$ and $\epsilon$ renders the Landau level mixing parameter $\kappa$, defined as the ratio of the Coulomb and cyclotron energies, $\simeq 9$ times larger in AlAs 2DESs ($\kappa\propto m^*/\epsilon$). Qualitatively similar to the GaAs 2DESs, we observe an insulating behavior reentrant around a strong $\nu=1/5$ FQHS, and extending to $\nu<1/5$. Additionally, we observe a clear minimum in magnetoresistance at $\nu=2/11$, and an inflection point at $\nu=1/7$ which is very reminiscent of the first report of an emerging FQHS at $\nu=1/7$ in GaAs 2DESs. The data provide evidence for developing QHSs of $^6$CFs at very small fillings. This is very surprising because $\kappa$ near $\nu \simeq 1/6$ in our sample is very large ($\simeq4$), and larger $\kappa$ has the tendency to favor Wigner crystal states over FQHSs at small fillings. Our data should inspire calculations that accurately incorporate $\kappa$ in competing many-body phases of $^6$CFs at extremely small fillings near $\nu=1/6$.

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Fractional Quantum Hall Bilayers at Half-Filling: Tunneling-driven Non-Abelian Phase

A ug 2 01 6 Fractional Quantum Hall Bilayers at Half-Filling : Tunneli ng-driven Non-Abelian Phase

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Topological phase transition between Jain states and daughter states of the ν = 1/2 fractional quantum Hall state

Fractional Quantum Hall States of the Phase in the Second Landau Level

Identifying the topological order of quantized half-filled Landau levels through their daughter states

Fractional Quantum Hall Effect at Ν = 5/2: Ground States, Non-Abelian Quasiholes, and Edge Modes in a Microscopic Model

Fractional Quantum Hall States of the A Phase in the Second Landau Level

Emergent Quantum Criticality from Fractionalizing One-Dimensional So(5) Symmetric Valence-Bond Solid States

Developing fractional quantum Hall states at $ν$ = $\dfrac{1}{7}$ and $\dfrac{2}{11}$ in the presence of significant Landau level mixing

Fractional Quantum Hall States of the $\mathcal{A}$ phase in the Second Landau Level

Half-Integer Filling Factor States in Quantum Dots

Fractional Quantum Hall State at Filling Factor $ν=1/4$ in Ultra-High-Quality GaAs 2D Hole Systems

Prediction of non-Abelian fractional quantum Hall effect at $ν= 2 + \frac{4}{11}$