Field-free superconducting diode effect in layered superconductor FeSe

Utane Nagata,Motomi Aoki,Akito Daido,Shigeru Kasahara,Yuichi Kasahara,Ryo Ohshima,Yuichiro Ando,Youichi Yanase,Yuji Matsuda,Masashi Shiraishi

2024-09-03

Abstract:The superconducting diode effect (SDE), where zero-resistance states appear nonreciprocally during current injection, is receiving tremendous interest in both fundamental and applied physics because the SDE is a novel manifestation of symmetry breaking and enables the creation of a novel diode without energy loss. In particular, magnetic-field-free SDEs have been extensively investigated because of their potential to serve as building blocks for superconducting circuit technology. In this letter, we report the field-free SDE in a layered superconductor, FeSe. Its underlying physics is clarified by systematic controlled experiments to be an interplay of a large thermoelectric response and geometrical asymmetry in FeSe. Our findings can pave a new avenue for the construction of novel material and device platforms utilizing SDEs.

Materials Science,Superconductivity

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to achieve the superconducting diode effect (SDE) without an external magnetic field and understand the physical mechanism behind it.

Specifically, the authors focus on the field - free superconducting diode effect observed in the layered superconductor FeSe. Traditionally, the superconducting diode effect requires breaking spatial inversion symmetry and time - reversal symmetry, which is usually achieved by introducing an external magnetic field or a specific structure. However, in this study, FeSe has a symmetric crystal structure, and the experiment was carried out without an external magnetic field, making the traditional explanations inapplicable.

To answer this question, the authors conducted systematic control experiments and theoretical analysis, and finally found that the origin of the field - free superconducting diode effect is the interaction between the thermal gradient caused by the sample geometry and the thermoelectric effect. Specifically:

1. **Sample geometry**: The geometry of the FeSe flake is not completely symmetric, resulting in non - uniform Joule heat when current is injected.
2. **Thermal gradient**: Due to the presence of contact resistance, the heat generated when current passes through the Au electrode is unevenly distributed at different positions of the FeSe flake, forming a temperature gradient \(\nabla T\) in the in - plane direction.
3. **Theroelectric effect**: FeSe has a large Seebeck coefficient in the normal state, so the temperature gradient can generate an additional charge current \(i_{th}\).
4. **Superconducting - normal state transition**: When the net current density exceeds the critical current density \(i_c\), the superconducting state is thermally destroyed, and FeSe transforms into the normal state, thus exhibiting non - reciprocal transmission characteristics.

These findings not only reveal a new mechanism for the field - free superconducting diode effect, but also provide new ideas for the development of new material platforms and device design. In particular, through simple geometric shape adjustment and utilization of the thermoelectric response of materials, efficient energy conversion and logic device applications can be achieved in asymmetric structures.

In summary, this paper solves the problem of how to achieve the superconducting diode effect without an external magnetic field, and determines the physical mechanism behind it through experimental and theoretical analysis, that is, the synergy between the thermal gradient and the thermoelectric effect.