Exploring topological phases in 2D half-hydrogenated PbBi materials
B. Bentaibi,L.B. Drissi,E.H. Saidi,O. Fassi-Fehri,M. Bousmina
DOI: https://doi.org/10.1016/j.mssp.2024.108180
IF: 4.1
2024-02-04
Materials Science in Semiconductor Processing
Abstract:We predict a new 2D topological insulator, namely the half hydrogenated PbBi-H monolayer, with an intrinsic Dirac double cone using GGA corrected to Rashba spin splittings using HSE approximation. The results establish that without spin orbit coupling (SOC) correction, this system is a buckled hexagonal semi-conductor with a direct gap at Γ -point and strong structural stability. When the SOC is switched on, the upper valence and lower conduction bands form a double Dirac cone with a small gap energy of 20.51 meV, derived from GGA-PBE calculations. This generates the presence of Dirac fermions characterized by a high Fermi velocity along the kx - and ky -directions, respectively. Moreover, the invariant number Z2=1 as well as the gapless edge modes provide evidence for the non trivial topological phase of the PbBi-H material. Interestingly, the gap reaches 184 meV using the HSE method and exhibits trivial topology ( Z2=0 ). However, after applying a biaxial tensile strain of ɛ=0.085 , our system transforms into a topological insulator. The present findings confirm the potential use of 2D PbBi-H compound in nano-electronic devices.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied