Abstract:Orbital magnetoelectric effect is closely related to the band topology of bulk crystalline insulators. Typical examples include the half quantized Chern-Simons orbital magnetoelectric coupling in three dimensional (3D) axion insulators and topological insulators, which are the hallmarks of their nontrivial bulk band topology. While the Chern-Simons coupling is well defined only for insulators with zero Chern number, the orbital magnetoelectric effects in 3D Chern insulators with nonzero (layer) Chern numbers are still open questions. In this work, we propose a never-mentioned quantization rule for the layer-resolved orbital magnetoelectric response in 3D Chern insulators, the gradient of which is exactly quantized in unit of $e^2/h$. By theoretical analysis and numerical simulations, we demonstrate that the quantized orbital magnetoelectric response remains robust for various types of interlayer hoppings and stackings, even against disorder and lack of symmetries. We argue that the robustness has a topological origin and protected by layer Chern number. It is thus promising to observe the proposed quantized orbital magnetoelectric response in a slab of 3D Chern insulator thanks to recent experimental developments.
What problem does this paper attempt to address?
### What problems does this paper attempt to solve?
This paper aims to explore the properties of orbital magnetoelectric coupling in three - dimensional (3D) Chern insulators. In particular, it proposes and verifies a new quantization rule for describing the layer - resolved orbital magnetoelectric response. Specifically, the paper addresses the following key issues:
1. **Limitations of existing theories**:
- For three - dimensional topological insulators with zero Chern numbers, Chern - Simons orbital magnetoelectric coupling has been widely studied, and its coefficient is half - integer quantized in units of \( \frac{e^2}{h} \).
- However, for 3D Chern insulators with non - zero Chern numbers, the orbital magnetoelectric effect remains an unsolved problem because these systems cannot define a smooth periodic gauge.
2. **Proposing a new quantization rule**:
- The paper proposes a previously unmentioned quantization rule for describing the layer - resolved orbital magnetoelectric response in 3D Chern insulators. The gradient of this response is precisely quantized in units of \( \frac{e^2}{h} \).
- Through theoretical analysis and numerical simulation, it is proven that this quantized orbital magnetoelectric response remains robust under different types of inter - layer transitions and stacking methods, even in the presence of disorder and lack of symmetry.
3. **Understanding of physical mechanisms**:
- The paper explains the origin of this quantized response, pointing out that it is determined by the topological properties protected by the layer Chern number. Specifically, a weak external electric field will cause the redistribution of electrons between layers, thereby causing a change in the layer - resolved orbital susceptibility.
- The authors also further illustrate, by introducing the Streda formula and topological arguments, that as long as the bulk energy gap does not close, the layer Chern number can still be well - defined even in the presence of disorder, so the quantization rule remains valid.
4. **Experimental feasibility**:
- The paper discusses the experimental observability of this layer - resolved orbital magnetoelectric response. In particular, in a thin - film system, applying an electric field in the vertical direction will induce a quantized change in the orbital susceptibility of the top and bottom layers, which can be detected by experimental means such as SQUID - on - tip microscopy.
### Summary
In general, this paper attempts to fill the gap in the study of orbital magnetoelectric effects in 3D Chern insulators, proposes a new quantization rule, and verifies its robustness and physical mechanism through theoretical and numerical simulations. In addition, the paper also explores the measurability of this effect in actual experiments, providing a theoretical basis for further experimental research.