All-Electrical Layer-Spintronics in Altermagnetic Bilayer

Rui Peng,Jin Yang,Lin Hu,Wee-Liat Ong,Pin Ho,Chit Siong Lau,Junwei Liu,Yee Sin Ang

2024-09-18

Abstract:Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of spin-polarized current in an altermagnetic bilayer. Such a bilayer system can host layer-spin locking, in which one layer hosts a spin-polarized current while the other layer hosts a current with opposite spin polarization. An out-of-plane electric field breaks the layer degeneracy, leading to a gate-tunable spin-polarized current whose polarization can be fully reversed upon flipping the polarity of the electric field. Using first-principles calculations, we show that CrS bilayer with C-type antiferromagnetic exchange interaction exhibits a hidden layer-spin locking mechanism that enables the spin polarization of the transport current to be electrically manipulated via the layer degree of freedom. We demonstrate that sign-reversible spin polarization as high as 87% can be achieved at room temperature. This work presents the pioneering concept of layer-spintronics which synergizes altermagnetism and bilayer stacking to achieve efficient electrical control of spin.

Mesoscale and Nanoscale Physics,Materials Science,Applied Physics

What problem does this paper attempt to address?

The paper aims to address the challenging issue of how to achieve effective control of spin-polarized current through an electric field. Specifically:

1. **Background and Challenges**:
- In the development of ultra-compact spintronic device technology, achieving full electrical control of spin-polarized current is highly desirable but extremely challenging.
- Currently, the control of spin signals typically relies on magnetic means, which poses compatibility issues when integrating compact devices, as stray magnetic fields can affect the operation of adjacent spintronic units.

2. **Research Objectives**:
- Propose a scheme to achieve full electrical control of spin-polarized current using alternating magnetic bilayer structures.
- Through first-principles calculations, it is shown that CrS bilayer material has a hidden interlayer spin-locking mechanism, allowing for electric field regulation of the spin polarization of the transport current through the layer degree of freedom.
- Demonstrate that at room temperature, up to 87% spin polarization can be achieved with positive and negative reversal under practical electric field gating.

3. **Main Contributions**:
- Using CrS bilayer material as the research subject, the unique interlayer spin-locking effect is demonstrated.
- Under C-type antiferromagnetic exchange interaction, CrS bilayer material can achieve up to 87% spin-polarized current, and this polarization can be reversed when the direction of the electric field changes.
- This approach provides a new idea for constructing fully electrically controlled spintronic devices and may open the door to the new device concept of "layer spintronics."