Abstract:Abstract Valleytronics uses valleys, a novel quantum degree of freedom, to encode information. It combines other degrees of freedom, such as charge and spin, to produce a more comprehensive, stable, and efficient information processing system. Valleytronics has become an intriguing field in condensed matter physics due to the emergence of new two-dimensional materials in recent years. However, in nonmagnetic valleytronic materials, the valley polarization is transient and the depolarization occurs once the external excitation is withdrawn. Introduction of magnetic field is an effective approach to realizing the spontaneous valley polarization by breaking the time-reversal symmetry. In hexagonal magnetic valleytronic materials, the inequivalent valleys at the K and – K ( K ′) Dirac cones have asymmetric energy gaps and Berry curvatures. The time-reversal symmetry in nonmagnetic materials can be broken by applying an external magnetic field, adding a magnetic substrate or doping magnetic atoms. Recent theoretical studies have demonstrated that valleytronic materials with intrinsic ferromagnetism, now termed as ferrovalley materials, exhibit spontaneous valley polarization without the need for external fields to maintain the polarization. The coupling of the valley and spin degrees of freedom enables stable and unequal distribution of electrons in the two valleys and thus facilitating nonvolatile information storage. Hence, ferrovalley materials are promising materials for valleytronic devices. In this review, we first briefly overview valleytronics and its related properties, the ways to realize valley polarization in nonmagnetic valleytronic materials. Then we focus on the recent developments in two-dimensional ferrovalley materials, which can be classified according to their molecular formula and crystal structure: MX 2 ; M(XY) 2 , M(XY 2 ) and M(XYZ) 2 ; M 2 X 3 , M 3 X 8 and MNX 6 ; MNX 2 Y 2 , M 2 X 2 Y 6 and MNX 2 Y 6 ; and the Janus structure ferrovalley materials. In the inequivalent valleys, the Berry curvatures have opposite signs with unequal absolute values, leading to anomalous valley Hall effect. When the valley polarization is large, the ferrovalleys can be selectively excited even with unpolarized light. Intrinsic valley polarization in two-dimensional ferrovalley materials is of great importance. It opens a new avenue for information-related applications and hence is under rapid development.

Two-dimensional non-volatile valley spin valve

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Valleytronics in two-dimensional magnetic materials

Spin-valley Coupling in a Two-Dimensional VSi2N4 Monolayer

Concepts of ferrovalley material and anomalous valley Hall effect

Interlayer-Exciton Based Nonvolatile Valleytronic Memory

Multifunctional Antiferromagnetic Materials with Giant Piezomagnetism and Noncollinear Spin Current

Valley and spin pump by scattering at non-magnetic disorders

Nonvolatile Voltage-Controlled Magnetization Reversal in a Spin-Valve Multiferroic Heterostructure

Valley Spin-Polarization of MoS2 Monolayer Induced by Ferromagnetic Order in an Antiferromagnet

Large and Controllable Spin-Valley Splitting in Two-Dimensional WS2/h-VN Heterostructure

Electrically and Magnetically Tunable Valley Polarization in Monolayer MoSe2 Proximitized by a 2D Ferromagnetic Semiconductor

Promising valleytronic materials with strong spin-valley coupling in two-dimensional MN 2 X 2 (M = Mo, W; X = F, H)

Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

Nonvolatile spin field effect transistor based on VSi2N4/Sc2CO2 multiferroic heterostructure

Spin-valley locking for in-gap quantum dots in a MoS2 transistor

Spin-Valley Locking Effect in Defect States of Monolayer MoS2

Electrical Valley Excitation By Spin Injection In Monolayer Tmdc

From Two- to Multi-State Vertical Spin Valves Without Spacer Layer Based on Fe3GeTe2 Van Der Waals Homo-Junctions.