Intervalley mixing of interface excitons at lateral heterojunctions

M. V. Durnev,D. S. Smirnov
2024-08-20
Abstract:$\require{mediawiki-texvc}$ We demonstrate that the low symmetry of armchair lateral heterojunction between transition metal dichalcogenide monolayers allows for the mixing of $\mathbf{K}_+$ and $\mathbf{K}_-$ valleys. From the tight binding model we estimate the strength of the valley coupling to be of the order of $0.2$ eV$\cdotÅ$ for typical heteropairs. We show that the valley mixing gives rise to the in-plane $g$-factor of localized electrons leading to the spin precession in the in-plane magnetic field. We further study the effects of the valley mixing on the fine structure and dynamics of excitons at type-II lateral heterojunctions. We find that the interplay of the valley mixing and long-range exchange interaction leads to the linear polarization of exciton photoluminescence along the armchair heterojunction with the degree of polarization up to $1/3$ under unpolarized excitation. Application of the in-plane magnetic field of the order of 10$-$100 mT in any direction leads to the depolarization of the photoluminescence.
Mesoscale and Nanoscale Physics,Materials Science
What problem does this paper attempt to address?
The problems that this paper attempts to solve are: in the two - dimensional transition - metal dichalcogenide (TMDCs) lateral heterojunctions, the inter - valley mixing phenomenon caused by low symmetry and its influence on the electronic and excitonic properties. Specifically, the authors focus on the following aspects: 1. **Mechanism and strength of inter - valley mixing**: - The paper estimates the strength of inter - valley coupling through the tight - binding model and finds that for a typical heterojunction pair, the inter - valley coupling strength is approximately \(0.2 \, \text{eV} \cdot \text{\AA}\). - Inter - valley mixing leads to the emergence of the in - plane g - factor, which causes the spin precession of local electrons in the in - plane magnetic field. 2. **Influence of inter - valley mixing on the fine structure and dynamics of excitons**: - The authors study the influence of the inter - valley mixing effect on the fine structure and dynamics of excitons in type - II lateral heterojunctions. - It is found that the synergy between inter - valley mixing and long - range exchange interactions results in the linear polarization of exciton photoluminescence polarized along the zigzag heterojunction direction, and the polarization degree can reach 1/3 under unpolarized excitation. 3. **Influence of an external magnetic field on photoluminescence**: - Applying an in - plane magnetic field (10 - 100 mT) will lead to the depolarization effect of photoluminescence. 4. **Theoretical models and calculations**: - An analytical theory based on the tight - binding model is proposed to calculate the inter - valley mixing constant, and the fine structure of excitons localized at atomically sharp lateral heterojunctions is calculated. ### Formula summary - **Inter - valley mixing Hamiltonian**: \[ H_{\text{val}} = \lambda e^{-2iKx_{\text{int}}} \tau^+ \delta(x - x_{\text{int}}) + \text{H.c.} \] where \(\lambda\) is the inter - valley mixing constant, \(\tau^+\) is the valley - raising operator, and \(\delta(x)\) is the Dirac delta function. - **Inter - valley mixing constant**: \[ \lambda = -i \frac{(V_+ - V_-) a_0}{2 \sqrt{3}} \] - **Valley splitting formula**: \[ \lambda = -i \frac{(V_+ - V_-) a_0}{2 \sqrt{3}} \] - **Effective g - factor**: \[ g_{\text{val}} = \frac{2|\gamma| g}{\sqrt{\Delta_c^2 + 4|\gamma|^2}} \] These formulas and theoretical models help the authors to describe in detail the inter - valley mixing phenomenon and its influence on the electronic and excitonic properties in lateral heterojunctions.