Efficient generation of out-of-plane polarized spin current in polycrystalline heavy metal devices with broken electric symmetries

Qianbiao Liu,Xin Lin,Ariel Shaked,Zhuyang Nie,Guoqiang Yu,Lijun Zhu

2024-08-10

Abstract:Spin currents of perpendicularly polarized spins (z spins) by an in-plane charge current have received blooming interest for the potential in energy-efficient spin-orbit torque switching of perpendicular magnetization in the absence of a magnetic field. However, generation of z spins is limited mainly to magnetically or crystallographically low-symmetry single crystals (such as non-colinear antiferromagnets) that are hardly compatible with the integration to semiconductor circuits. Here, we report efficient generation of z spins in sputter-deposited polycrystalline heavy metal devices via a new mechanism of broken electric symmetries in both the transverse and perpendicular directions. Both the dampinglike and fieldlike spin-orbit torques of z spins can be tuned significantly by varying the degree of the electric asymmetries via the length, width, and thickness of devices as well as by varying the type of the heavy metals. We also show that the presence of z spins enables deterministic, nearly-full, external-magnetic-field-free switching of a uniform perpendicularly magnetized FeCoB layer, the core structure of magnetic tunnel junctions, with high coercivity at a low current density. These results establish the first universal, energy-efficient, integration-friendly approach to generate z-spin current by electric asymmetry design for dense and low-power spin-torque memory and computing technologies and will stimulate investigation of z-spin currents in various polycrystalline materials.

Materials Science

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to efficiently generate out - of - plane polarized spin currents (spins in the z - direction) in polycrystalline heavy - metal devices. Specifically, the researchers hope to achieve this goal by breaking electrical symmetry, which was previously mainly limited to single - crystal materials with low symmetry (such as non - collinear antiferromagnets), and these materials are difficult to integrate with semiconductor circuits. Therefore, this paper proposes a new mechanism to efficiently generate spin currents in the z - direction in sputter - deposited polycrystalline heavy - metal devices by breaking electrical symmetry in the lateral and vertical directions.

The key to this mechanism is that by changing the geometry of the device (such as length, width, and thickness) and the type of heavy metal used, the damping - like and field - like spin - orbit torques of the spin in the z - direction can be significantly adjusted. The study also shows that this spin current in the z - direction can enable the FeCoB layer with uniform vertical magnetization to achieve deterministic and almost complete magnetization switching without an external magnetic field, which is particularly important for low - current - density operation under high coercivity.

Overall, this research provides a general, energy - efficient, and easy - to - integrate method for generating spin currents in the z - direction through electrical asymmetry design, which is of great significance for the development of dense and low - power spin - torque storage and computing technologies.