Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

Electron Mobilities in SrTiO$_3$ and KTaO$_3$: Role of Phonon Anharmonicity, Mass Renormalization and Disorder

Electron mobilities in and : Role of phonon anharmonicity, mass renormalization, and disorder

Carrier Mobility of Strongly Anharmonic Materials from First Principles

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Anomalous Thermal Transport of SrTiO$_3$ Driven by Anharmonic Phonon Renormalization

Intrinsic Mobility Limiting Mechanisms in Lanthanum-doped Strontium Titanate

Long-range electrostatic contribution to electron-phonon couplings and mobilities of two-dimensional and bulk materials

Efficient anharmonic lattice dynamics calculations of thermal transport in crystalline and disordered solids

Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO$_3$, BaSnO$_3$ and SrTiO$_3$

Lattice thermal conductivity in the anharmonic overdamped regime

Electron and Hole Mobility of SnO2 from Full-Band Electron-Phonon and Ionized Impurity Scattering Computations

Coexistence of high electron-mobility, unpaired spins, and superconductivity at high carrier density SrTiO$_3$-based interfaces

Advancing intrinsic carrier mobility estimation in transition metal trichalcogenide monolayers using DFT-BTE

Interplay between electron-phonon couplings and disorder strength on the transport properties of organic semiconductors

Incorrect sample classification in "Electron localization induced by intrinsic anion disorder in a transition metal oxynitride"

Disorder-Driven Metal-Insulator Transitions in Deformable Lattices

Ab initio Investigation of Thermal Transport in Insulators: Unveiling the Roles of Phonon Renormalization and Higher-Order Anharmonicity

Electronic spin susceptibility in metallic strontium titanate

Carrier‐Modulated Anomalous Electron Transport in Electrolyte‐Gated SrTiO3

Contactless determination and parametrization of charge carrier mobility in silicon as a function of injection level and temperature using time-resolved THz spectroscopy

Large Enhancement of 2D Electron Gases Mobility Induced by Interfacial Localized Electron Screening Effect