ImPress: Securing DRAM Against Data-Disturbance Errors via Implicit Row-Press Mitigation

Moinuddin Qureshi,Anish Saxena,Aamer Jaleel

2024-07-23

Abstract:DRAM cells are susceptible to Data-Disturbance Errors (DDE), which can be exploited by an attacker to compromise system security. Rowhammer is a well-known DDE vulnerability that occurs when a row is repeatedly activated. Rowhammer can be mitigated by tracking aggressor rows inside DRAM (in-DRAM) or at the Memory Controller (MC). Row-Press (RP) is a new DDE vulnerability that occurs when a row is kept open for a long time. RP significantly reduces the number of activations required to induce an error, thus breaking existing RH solutions. Prior work on Explicit Row-Press mitigation, ExPress, requires the memory controller to limit the maximum row-open-time, and redesign existing Rowhammer solutions with reduced Rowhammer threshold. Unfortunately, ExPress incurs significant performance and storage overheads, and being a memory controller-based solution, it is incompatible with in-DRAM trackers. In this paper, we propose Implicit Row-Press mitigation (ImPress), which does not restrict row-open-time, is compatible with memory controller-based and in-DRAM solutions and does not reduce the tolerated Rowhammer threshold. ImPress treats a row open for a specified time as equivalent to an activation. We design ImPress by developing a Unified Charge-Loss Model, which combines the net effect of both Rowhammer and Row-Press for arbitrary patterns. We analyze both controller-based (Graphene and PARA) and in-DRAM trackers (Mithril and MINT). We show that ImPress makes Rowhammer solutions resilient to Row-Press transparently, without affecting the Rowhammer threshold.

Cryptography and Security,Hardware Architecture

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the data disturbance error (DDE) in dynamic random - access memory (DRAM), especially the security vulnerabilities caused by Row - Press (RP). Specifically, Row - Press is a new DDE vulnerability that occurs when a row remains open in DRAM for an overly long time. This long - time row opening will cause the charge of adjacent rows to gradually leak, and eventually lead to bit flips. Row - Press significantly reduces the number of activations required to induce an error, thereby undermining the existing Rowhammer mitigation schemes.

### Core of the Problem

1. **Rowhammer Vulnerability**: Rowhammer means that when a certain row is frequently activated, it will cause bit flips in adjacent rows. Existing solutions mitigate this problem by tracking the attacker row and refreshing the victim row before reaching a certain threshold (TRH).

2. **Row - Press Vulnerability**: Row - Press occurs when a row remains open for an overly long time, which will accelerate the charge leakage of adjacent rows, thereby reducing the number of activations required to induce bit flips. Row - Press can reduce the required number of activations to 1/18 to 1/160 of the original, making the existing Rowhammer mitigation schemes ineffective.

3. **Limitations of Existing Solutions**:
- **ExPress**: This is an explicit Row - Press mitigation scheme that prevents Row - Press attacks by limiting the row - opening time (tMRO). However, this method has problems such as high performance overhead, high storage overhead, and incompatibility with in - DRAM trackers.

4. **Objective**: Propose a new mitigation scheme that can transparently handle Row - Press attacks without affecting the Rowhammer threshold (TRH), without limiting the row - opening time (tON), and is suitable for memory - controller - based and in - DRAM - based solutions.

### Solution Proposed in the Paper

The paper proposes the Implicit Row - Press Mitigation (ImPress) scheme, with the following main features:

- **No Limitation on Row - Opening Time**: ImPress does not impose a hard limit on the row - opening time, thus avoiding performance degradation caused by early row closure.

- **Compatibility**: ImPress is compatible with existing memory - controller - based and in - DRAM - based Rowhammer mitigation schemes and does not require modification of the JEDEC standard.

- **Unified Charge - Loss Model**: ImPress develops a unified charge - loss model (Unified Charge - Loss Model), which normalizes the combined effects of Rowhammer and Row - Press into a single metric. This model can accurately estimate the charge loss caused by Rowhammer and Row - Press together in any pattern.

- **Equivalent Activation Counting**: ImPress converts the time that a row remains open into an equivalent number of activations (EACT) and incorporates it into the Rowhammer mitigation mechanism. In this way, the Row - Press attack is transformed into an equivalent Rowhammer attack, and thus can be transparently handled by the existing Rowhammer mitigation schemes.

Through these methods, ImPress can effectively mitigate Row - Press attacks without reducing the Rowhammer threshold, and has lower performance and storage overheads.

### Formula Summary

- **Total Charge Loss (TCL RH)**: For Rowhammer attacks, the total charge loss is:
\[
TCL_{RH}=K\cdot CA = K\cdot1 = K
\]
where \(K\) is the number of activations, and \(CA\) is the relative charge loss per activation.

- **Total Charge Loss of Row - Press (TCL RPA)**:
\[
TCL_{RPA}=1 + f\left(\frac{t_{ON}-t_{RAS}}{t_{RC}}\right)
\]
where \(t_{ON}\) is the row - opening time, \(t_{RAS}\) is...