Abstract:Abstract Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field of condensed-matter physics, i.e., valleytronics, whose development is exactly following that of spintronics, which focuses on the spin degree of freedom. Here, in analogy to half-metals in spintronics where one spin channel is conducting, whereas the other is insulating, we propose the concept of half-valley metal, in which conduction electrons are intrinsically 100% valley polarized, as well as 100% spin polarized even when spin–orbit interactions are considered. Combining first-principle calculations with a two-band k · p model, the physical mechanism to form the half-valley metal is illuminated. Taking the ferrovalley H-FeCl 2 monolayer with strong exchange interaction as an example, we find that the strong electron correlation effect can induce the ferrovalley to half-valley-metal transition. Due to the valley-dependent optical selection rules, such a system could be transparent to, e.g., left-circularly polarized light, yet the right-circularly polarized light will be reflected, which can in turn be used as a crucial method to detect the half-valley-metal state. Interestingly, with the increase of the correlation effect, the system becomes insulating again with all valleys following the same optical selection rule. We confirm that in this specific case, the valence bands, which consist of single spin, possess nonzero Chern number and consequently an intrinsic quantum anomalous valley Hall effect emerges. Our findings open an appealing route toward functional 2D materials design of valleytronics.

Renormalization of the valley Hall conductivity due to interparticle interaction

Role of Coulomb interaction in the valley photogalvanic effect

Non-conservation of the valley density and its implications for the observation of the valley Hall effect

Nonconservation of the Valley Density and its Implications for the Observation of the Valley Hall Effect

Theory of Coulomb driven nematicity in a multi-valley two-dimensional electron gas

Magnetoresistance in Noncentrosymmetric Two-dimensional Systems

Nonlinear Valley Hall Effect

Hall conductivity in the presence of spin-orbit interaction and disorder

Valley Hall effect in disordered monolayer MoS2 from first principles

Tunneling Valley Hall Effect Driven by Tilted Dirac Fermions

Concepts of the half-valley-metal and quantum anomalous valley Hall effect

On valley asymmetry in a topological interaction for quasi-particles

Intrinsic anomalous, spin and valley Hall effects in ex-so-tic van-der-Waals structures

Interaction dominated transport in 2D conductors: from degenerate to partially-degenerate regime

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-Fecl2

Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN4

Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength-Dependent Mapping

Quantized valley Hall response from local bulk density variations

Interaction Induced Quantum Valley Hall Effect in Graphene