Low temperature conductivity of BaFe$_{0.5}$Nb$_{0.5}$O$_3$ double perovskite structure ceramics

Vijay Khopkar,Balaram Sahoo

2024-07-10

Abstract:In this work, we explore the origin and type of charge carriers, and their transport mechanism in polycrystalline barium-iron-niobate (BFN, BaFe$_{0.5}$Nb$_{0.5}$O$_3$) ceramics, at lower temperatures between 20K and 300K. The observed point defects at grain andsurface defects at grain boundary region are responsible for the electronic conductivity, whereas dipoles at grain boundary region are responsible for the ionic conductivity, these independent electronic and ionic conductivity were responsible for the total conductivity of our BFN sample. The required activation energy for conduction of electrons in grain boundary region and ions in grain region were calculated to be 317 meV and 17 meV respectively. The electronic conductivity of grain region obey Jonscher's power law. Analysis of the temperature dependent frequency exponent suggest that the electronic conductivity of grain follows the overlapping large polaron tunneling (OLP) model. The temperature dependent conductivity follows the Mott variable range hopping model(VRH), showing hopping range increases with decreasing temeprature. The defect density of the grain obtained to be $3.17 \times 10^{17}$ eV/cm$^3$. The contribution of phonon to the conductivity understood by considering Schankenberg model, activation energy of 110 meV corresponds to the multiphonon (both optical and acoustic) and 1.6 meV corresponds to acoustic phonon only. Our systematic study provides in-depth understanding of the low temperature conductivity mechanism of polycrystalline BFN ceramics.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the conductivity mechanism of BaFe\(_{0.5}\)Nb\(_{0.5}\)O\(_3\) (BFN) ceramic materials in the low - temperature range (from 20 K to 300 K), especially to determine the type of charge carriers and their transport mechanisms. Specifically, the research aims to:

1. **Clarify the source and type of charge carriers**: Identify the charge carriers (electrons or ions) that cause conductivity in BFN ceramics, and distinguish the contributions in the intra - grain and grain - boundary regions.

2. **Analyze the conductivity behavior at different temperatures**: Through experimental measurements and theoretical analysis, explore the behavior of electron and ion conductivity with temperature changes, and determine the underlying physical mechanisms.

3. **Calculate the activation energy**: Calculate the activation energy required for electron conduction at the grain boundaries and ion conduction in the grains, in order to understand the energy barriers for carrier migration.

4. **Verify the conductivity model**: Verify whether the electron conductivity follows Jonscher's universal power law and the overlapping large polaron tunneling (OLP) model, and explore the applicability of Mott's variable - range hopping (VRH) model to the temperature - dependent conductivity.

5. **Understand the influence of defects on conductivity**: Evaluate the specific contributions of point defects and dipoles to conductivity, especially how these defects affect the overall electrical properties of the material under low - temperature conditions.

Through the above research, the author hopes to provide an in - depth understanding of the conductivity mechanism of BFN ceramic materials at low temperatures, thereby providing theoretical support for their potential uses in various optical and electrical applications.