High-power and narrow-linewidth laser on thin-film lithium niobate enabled by photonic wire bonding

Cornelis A.A. Franken,Rebecca Cheng,Keith Powell,Georgios Kyriazidis,Victoria Rosborough,Juergen Musolf,Maximilian Shah,David R. Barton III,Gage Hills,Leif Johansson,Klaus-J. Boller,Marko Lončar

2024-07-06

Abstract:Thin-film lithium niobate (TFLN) has emerged as a promising platform for the realization of high performance chip-scale optical systems, spanning a range of applications from optical communications to microwave photonics. Such applications rely on the integration of multiple components onto a single platform. However, while many of these components have already been demonstrated on the TFLN platform, to date, a major bottleneck of the platform is the existence of a tunable, high-power, and narrow-linewidth on-chip laser. Here, we address this problem using photonic wire bonding to integrate optical amplifiers with a thin-film lithium niobate feedback circuit, and demonstrate an extended cavity diode laser yielding high on-chip power of 78 mW, side mode suppression larger than 60 dB and wide wavelength tunability over 43 nm. The laser frequency stability over short timescales shows an ultra-narrow intrinsic linewidth of 550 Hz. Long-term recordings indicate a high passive stability of the photonic wire bonded laser with 58 hours of mode-hop-free operation, with a trend in the frequency drift of only 4.4 MHz/h. This work verifies photonic wire bonding as a viable integration solution for high performance on-chip lasers, opening the path to system level upscaling and Watt-level output powers.

Optics,Applied Physics

What problem does this paper attempt to address?

The paper primarily addresses the issue of integrating high-performance, tunable, high-power, and narrow-linewidth lasers on a thin-film lithium niobate (TFLN) platform. Specifically, the research team utilized Photonic Wire Bonding (PWB) technology to integrate optical amplifiers made of indium phosphide (InP) with TFLN feedback circuits, achieving an extended cavity diode laser.

Key results of the paper include:
1. **High Power Output**: Achieved an on-chip output power of up to 78 milliwatts.
2. **Narrow Linewidth**: Experimental measurements of long-term stability confirmed that the laser has an ultra-narrow intrinsic linewidth of only 550 Hz.
3. **Wide Wavelength Tunability**: The laser achieved a wide wavelength tuning range of over 43.7 nanometers around approximately 1530 nanometers.
4. **High Stability**: The laser demonstrated excellent passive stability, maintaining mode-hop-free operation for 58 hours with a frequency drift rate of only 4.4 MHz per hour.

These results validate Photonic Wire Bonding as a viable integration scheme for high-performance on-chip lasers, paving the way for system-level scaling and higher output power. Additionally, this work showcases the significant potential of combining the TFLN platform with Photonic Wire Bonding technology in the field of integrated photonics, particularly for applications requiring high-power, narrow-linewidth laser sources, such as optical communications and microwave photonics.