Wide-bandgap semiconductor of three-dimensional unconventional stoichiometric NaCl2 crystal

Siyan Gao,Junlin Jia,Xu Wang,Yue-Yu Zhang,Yijie Xiang,Pei Li,Ruobing Yi,Xuchang Su,Guosheng Shi,Feifei Qin,Yi-Feng Zheng,Lei Chen,Yu Qiang,Junjie Zhang,Lei Zhang,Haiping Fang

2024-06-04

Abstract:The expanding applications call for novel new-generation wide-bandgap semiconductors. Here, we show that a compound only composed of the ordinary elements Na and Cl, namely three-dimensional NaCl2 crystal, is a wide-bandgap semiconductor. This finding benefits from the breaking of conventional stoichiometry frameworks in the theoretical design, leading to the discovery of three-dimensional XY2 (X = Na, Li, K; Y = Cl, F, Br, I) crystals, with covalent bonds of Y pairs inducing the wide bandgap from 2.24 to 4.45 eV. Crucially, such an unexpected NaCl2 crystal was successfully synthesized under ambient conditions. The unconventional stoichiometric strategy with other chemical elements potentially yields more wide-bandgap semiconductors, offering the capability for bandgap tuning. These unconventional stoichiometric materials may also exhibit superconductivity, transparent inorganic electrides, high-energy-density, and beyond.

Materials Science

What problem does this paper attempt to address?

The paper mainly addresses the following issues:

1. **Theoretical Prediction and Synthesis of Novel Wide Bandgap Semiconductor Materials**: By breaking the traditional stoichiometric framework, the authors theoretically predicted a three-dimensional non-stoichiometric crystal composed of common elements sodium (Na) and chlorine (Cl) — NaCl₂, and successfully synthesized this crystal at room temperature and atmospheric pressure. This material exhibits wide bandgap semiconductor characteristics, with a bandgap width of 4.22 eV, surpassing some popular wide bandgap semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN).

2. **Stability and Performance Verification of the Material**: The authors verified the stability of the NaCl₂ crystal through various experimental methods and evaluated its electron and hole carrier mobility. The results show that the electron and hole carrier mobility of the NaCl₂ crystal are approximately 105 and 2,820 cm²/V·s, respectively, comparable to materials like SiC, GaN, and Ga₂O₃, demonstrating its potential for application as a wide bandgap semiconductor.

3. **Exploration of Optical Properties and Applications**: The paper further explores the optical absorption properties of the NaCl₂ crystal and prepared an ultraviolet photodetector based on this material. Experimental results indicate that the NaCl₂ crystal has good ultraviolet absorption capability and exhibits stable photoelectric switching characteristics under different bias voltages, providing new possibilities for the application of wide bandgap semiconductor materials in the field of ultraviolet detection.

4. **Extension to Other XY₂ Type Crystals**: The authors also proposed a general method that can apply this mixed ionic-covalent bond strategy to a series of XY₂ (X = Na, Li, K; Y = Cl, F, Br, I) type crystals, which also exhibit wide bandgap characteristics ranging from 2.24 to 4.45 eV. This method offers broad prospects for designing new wide bandgap semiconductor materials with tunable bandgap properties.

In summary, this paper proposes a novel wide bandgap semiconductor material and conducts detailed research on its structure, stability, optical properties, and potential applications. This work not only provides new ideas for the development of wide bandgap semiconductors but may also have significant implications for future electronic devices and optoelectronic technologies.