A superconducting full-wave bridge rectifier

Matteo Castellani,Owen Medeiros,Alessandro Buzzi,Reed A. Foster,Marco Colangelo,Karl K. Berggren
2024-06-27
Abstract:Superconducting thin-film electronics are attractive for their low power consumption, fast operating speeds, and ease of interface with cryogenic systems such as single-photon detector arrays, and quantum computing devices. However, the lack of a reliable superconducting two-terminal asymmetric device, analogous to a semiconducting diode, limits the development of power-handling circuits, fundamental for scaling up these technologies. Existing efforts to date have been limited to single-diode proofs of principle and lacked integration of multiple controllable and reproducible devices to form complex circuits. Here, we demonstrate a robust superconducting diode with tunable polarity using the asymmetric Bean-Livingston surface barrier in niobium nitride micro-bridges, achieving a 43% rectification efficiency. We then realize and integrate several such diodes into a bridge rectifier circuit on a single microchip that performs continuous full-wave rectification up to 3 MHz and AC-to-DC conversion in burst mode at 50 MHz with an estimated peak power efficiency of 60%.
Applied Physics
What problem does this paper attempt to address?
This paper focuses on the development of a superconducting full-wave bridge rectifier to overcome the lack of reliable bidirectional asymmetric devices (similar to semiconductor diodes) in superconducting electronics, which limits the development of power processing circuits that are critical for the advancement of superconducting technology. The research team demonstrates an adjustable polarity robust superconducting diode with 43% rectification efficiency by utilizing the asymmetrical Bean-Livingston surface potential barrier in niobium nitride microbridges. They integrate multiple such diodes into a monolithic bridge rectifier circuit capable of continuous full-wave rectification up to 3 MHz and burst mode AC-DC conversion up to 50 MHz, with an estimated peak power efficiency of 60%. This work addresses the challenge of achieving efficient and scalable power management circuits in superconducting technology. Existing superconducting diode experiments are mainly limited to concept verification using individual diodes, lacking controllable and reproducible integration of multiple devices. The proposed solution in the paper utilizes the superconducting diode effect, particularly the vortex diode effect based on the asymmetrical Bean-Livingston surface potential barrier in microbridges. This approach offers single-layer patterning, low magnetic field operation, high-resistance state generation, and compatibility with conventional electronic devices. The researchers realize such vortex diodes on niobium nitride films, demonstrating full-wave rectification and AC-DC conversion at different frequencies. The paper also discusses the future demands in areas such as superconducting nanowire single-photon detectors arrays, quantum computing, optoelectronic pulse neural networks, and high-energy physics, emphasizing the importance of building architectures capable of handling and distributing significant power at low temperatures. By demonstrating the full-wave bridge rectifier, the potential of vortex diodes in designing power processing systems is proven, laying the foundation for further development in superconducting electronics.