Abstract:The Stimulated Raman Adiabatic Passage (STIRAP) is applied to a system coupled to a bath made of fully-interacting two-level systems, whose dynamics is studied exploiting the generalized Cluster Correlation Expansion (gCCE) theory. We specialize our analysis to a negatively charged silicon vacancy (SiV-1) in non-purified 4H-SiC to assess the possibility of transferring population between two states of the ground manifold, also taking into account the interaction with a spherical nuclear spin bath formed by nuclei of 29Si and 13C. For this system, it is demonstrated that the presence of a small/medium sized bath has no effect on the protocol, finding in particular a set of parameter values for an efficient STIRAP process.

What problem does this paper attempt to address?

### What problems does this paper attempt to solve? This paper aims to study the influence of the STIRAP (Stimulated Raman Adiabatic Passage) process on the negatively charged silicon vacancy (V\(_{\text{Si}}^{-1}\)) system in the presence of a spin bath. Specifically, the authors focus on how to achieve an efficient and robust STIRAP process in non - purified 4H - SiC materials and evaluate the influence of the nuclear spin bath on this process. #### Main problems and goals: 1. **Explore the effectiveness of the STIRAP process**: - In the presence of a spherical spin bath composed of \(^{29}\)Si and \(^{13}\)C nuclear spins, verify whether the STIRAP process can still effectively transfer the population from one ground state to another. - Study the influence of different parameters (such as pulse width, time delay, detuning, etc.) on the efficiency of the STIRAP process. 2. **Evaluate the influence of the spin bath**: - Analyze whether the existence of the spin bath will have an adverse effect on the STIRAP process, especially when the number of nuclear spins in the spin bath is large. - Use the generalized cluster - correlation expansion (gCCE) theory to simulate and analyze the interaction between the spin bath and the electron spin. 3. **Optimize STIRAP parameters**: - Find a set of optimal parameters so that perfect population transfer can be achieved within a limited time while maintaining high fidelity. - Determine which parameter combinations can still maintain the high efficiency of the STIRAP process in the presence of a spin bath. #### Research background and motivation: - STIRAP is a widely used technique for quantum - state manipulation, especially having important applications in condensed - matter physics, plasma systems, trapped ions, and superconducting devices. - In actual experiments, environmental noise (such as the coupling of electromagnetic fields, the interaction of nuclear spin baths, etc.) may have an adverse effect on the STIRAP process. - This paper selects the V\(_{\text{Si}}^{-1}\) defect in 4H - SiC materials as the research object because this defect has a long decoherence time and good coherent control ability, making it a potential candidate in the field of quantum technology. Through the above research, the authors hope to provide a new method for future quantum computing and quantum information processing to achieve more efficient quantum - state initialization and manipulation.

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