Abstract:We address the question of how the Aharonov-Bohm flux $\Phi_{AB}$ can affect the energy levels of graphene magnetic quantum dots (GMQDs) of radius $R$. To answer this question, we consider GMQDs induced by a magnetic field $B$ and subjected to two different gaps - an internal gap $\Delta_1$ and an external gap $\Delta_2$. After determining the eigenspinors and ensuring continuity at the boundary of the GMQDs, we formulate an analytical equation describing the corresponding energy levels. Our results show that the energy levels can exhibit either a symmetric or an asymmetric behavior depending on the valleys $K$ and $K'$ together with the quantum angular momentum $m$. In addition, we find that $\Phi_{AB}$ causes an increase in the band gap width when $\Delta_1$ is present inside the GMQDs. This effect is less significant when a gap is present outside, resulting in a longer lifetime of the confined electronic states. Further increases in \(\Phi_{AB}\) reduce the number of levels between the conduction and valence bands, thereby increasing the band gap. These results demonstrate that the electronic properties of graphene can be tuned by the presence of the AB flux, offering the potential to control the behavior of graphene-based quantum devices.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to study the influence of Aharonov - Bohm (AB) flux \(\Phi_{AB}\) and double energy gaps (internal energy gap \(\Delta_1\) and external energy gap \(\Delta_2\)) on the energy levels of graphene magnetic quantum dots (GMQDs). Specifically, the author wants to understand the following points:
1. **Influence of AB flux on energy levels**: How to modulate the energy levels of graphene magnetic quantum dots by introducing AB flux, and then affect its band gap.
2. **Role of double energy gaps**: The specific influence of the internal and external energy gaps on the electron band structure, and how these energy gaps interact with the AB flux.
3. **Symmetry and asymmetry of energy levels**: The symmetric or asymmetric behavior of energy levels under different valleys (valleys \(K\) and \(K'\)) and angular momentum quantum number \(m\).
### Main findings
1. **Symmetry and asymmetry**:
- The combination of AB flux and quantum angular momentum \(m\) can cause the energy levels to exhibit symmetric or asymmetric behavior. In particular, for different valleys \(K\) and \(K'\), the variation patterns of energy levels are different.
2. **Band - gap change**:
- The introduction of AB flux will increase the band - gap width, especially in the presence of the internal energy gap \(\Delta_1\). When the external energy gap \(\Delta_2\) exists, this effect is weaker, thus prolonging the lifetime of the confined electron states.
- Further increasing the AB flux will reduce the number of energy levels between the conduction band and the valence band, thereby further increasing the band gap.
3. **Regulation of electron states**:
- As an external source, the AB flux can effectively control the electronic properties of the graphene system, providing a new way for designing graphene - based quantum devices.
### Research methods
In order to study the above problems, the author adopted the following methods:
1. **Theoretical model**:
- Established a theoretical framework for graphene magnetic quantum dots including AB flux and double energy gaps.
- Solved the Dirac equation to determine the eigenspinors in two different regions and ensure the continuity conditions at the boundaries.
2. **Numerical analysis**:
- Used numerical methods to analyze the influence of different physical parameters (such as magnetic field \(B\), angular momentum \(m\), radius \(R\), AB flux \(\phi_i\) and double energy gaps \(\Delta_1, \Delta_2\)) on energy levels.
- Demonstrated the specific influence of AB flux and double energy gaps on the electronic properties of the system by drawing energy spectrum diagrams.
### Conclusion
This study shows that AB flux and double energy gaps are powerful tools for regulating the electronic properties of graphene. These parameters not only affect the number and distribution of energy levels, but also significantly change the size of the band gap. This provides an important theoretical basis and technical means for designing new optoelectronic devices, spintronic devices and other quantum devices.