Abstract:Different applications require different customizations of silicon photomultiplier (SiPM) technology. We present a review on the latest SiPM technologies developed at Fondazione Bruno Kessler (FBK, Trento), characterized by a peak detection efficiency in the near-UV and customized according to the needs of different applications. Original near-UV sensitive, high-density SiPMs (NUV-HD), optimized for Positron Emission Tomography (PET) application, feature peak photon detection efficiency (PDE) of 63% at 420 nm with a 35 um cell size and a dark count rate (DCR) of 100 kHz/mm². Correlated noise probability is around 25% at a PDE of 50% at 420 nm. It provides a coincidence resolving time (CRT) of 100 ps FWHM (full width at half maximum) in the detection of 511 keV photons, when used for the readout of LYSO(Ce) scintillator (Cerium-doped lutetium-yttrium oxyorthosilicate) and down to 75 ps FWHM with LSO(Ce:Ca) scintillator (Cerium and Calcium-doped lutetium oxyorthosilicate). Starting from this technology, we developed three variants, optimized according to different sets of specifications. NUV-HD⁻LowCT features a 60% reduction of direct crosstalk probability, for applications such as Cherenkov telescope array (CTA). NUV-HD⁻Cryo was optimized for cryogenic operation and for large photosensitive areas. The reference application, in this case, is the readout of liquid, noble-gases scintillators, such as liquid Argon. Measurements at 77 K showed a remarkably low value of the DCR of a few mHz/mm². Finally, vacuum-UV (VUV)-HD features an increased sensitivity to VUV light, aiming at direct detection of photons below 200 nm. PDE in excess of 20% at 175 nm was measured in liquid Xenon. In the paper, we discuss the specifications on the SiPM related to different types of applications, the SiPM design challenges and process optimizations, and the results from the experimental characterization of the different, NUV-sensitive technologies developed at FBK.

Investigation of the burst phenomenon in SiPMs at liquid nitrogen temperature

Characterization of a Mass-Produced SiPM at Liquid Nitrogen Temperature for CsI Neutrino Coherent Detectors

Cryogenic Characterization of FBK HD Near-UV Sensitive SiPMs

Characterization of Silicon Photomultiplier Photon Detection Efficiency at Liquid Nitrogen Temperature

A Novel Measurement Method for SiPM External Crosstalk Probability at Low Temperature

SiPM Cross-Talk in Liquid Argon Detectors

Characterisation of Silicon Photomultipliers for liquid xenon detectors

Characterisation of SiPM Photon Emission in the Dark

Front-end Electronics and Optimal Ganging Schemes for Single Photon Detection with Large Arrays of SiPMs in Liquid Argon

Spatially Resolved Dark Count Rate of SiPMs

Study of Silicon Photomultiplier Performance in External Electric Fields

Characterization of Silicon Photomultipliers after proton irradiation up to $10^{12} n_{eq}/mm^2$

Characterisation of a silicon photomultiplier device for applications in liquid argon based neutrino physics and dark matter searches

Radiation damage on Silicon Photomultipliers from ionizing and non-ionizing radiation of low-earth orbit operations

Dynamic Range of SiPMs with High Pixel Densities

A low noise and low power cryogenic amplifier for single photoelectron sensitivity with large arrays of SiPMs

Silicon Photomultipliers for Detection of Photon Bunching Signatures

Stimulated Secondary Emission of Single Photon Avalanche Diodes

NUV-Sensitive Silicon Photomultiplier Technologies Developed at Fondazione Bruno Kessler

Radiation Hardness tests with neutron flux on different Silicon photomultiplier devices