What problem does this paper attempt to address?

The problem that this paper attempts to solve is the influence of self - heating effect on electron - phonon scattering in nano - devices based on two - dimensional materials. Specifically, the research objectives are: 1. **Explore the self - heating effect**: Through ab - initio methods (such as density functional theory and non - equilibrium Green's function formalism), study the influence of the self - heating effect on the performance of devices based on two - dimensional materials. In particular, study the specific influence of the self - heating effect on electron - phonon interaction. 2. **Develop an efficient algorithm**: In order to be able to effectively perform self - energy calculations, the author has developed a new algorithm based on the fast Fourier transform (FFT), which can achieve an acceleration of about 500 times. This enables more efficient simulation of complex electron - phonon coupling systems in practical applications. 3. **Verify the influence of the self - heating effect**: By studying the simple case of free - standing MoS₂ (without explicit metal leads), verify whether the self - heating effect will cause significant degradation of device performance. The study found that in this case, the self - heating effect did not lead to obvious performance degradation. ### Overview of the main content of the paper #### Introduction - **Background**: In the past two decades, two - dimensional materials have become candidate materials for next - generation devices due to their excellent electrostatic control capabilities, reduced short - channel effects, and less device variation. - **Methods**: Density functional theory (DFT) and non - equilibrium Green's function (NEGF) formalism are important tools for studying two - dimensional materials. Research shows that in order to correctly describe the behavior of devices based on two - dimensional materials, electron - phonon interaction must be considered. #### Theoretical basis - **DFT Hamiltonian**: \[ \hat{H}=\sum_{n k} \epsilon_{k n} \hat{c}^{\dagger}_{k n} \hat{c}_{k n}+\sum_{\nu q} \hbar \omega_{q \nu}(\hat{a}^{\dagger}_{q \nu} \hat{a}_{q \nu}+\frac{1}{2})+\frac{N - 1}{2} \sum_{k q} \sum_{m n \nu} g_{m n \nu}(k, q) \hat{c}^{\dagger}_{k + q m} \hat{c}_{k n}(\hat{a}_{q \nu}+\hat{a}^{\dagger}_{-q \nu}) \] where \( \epsilon_{k n} \) is the electron band energy, \( \hbar \omega_{q \nu} \) is the phonon energy, and \( g_{m n \nu}(k, q) \) is the electron - phonon interaction parameter. - **NEGF formalism**: - Electron Green's function: \[ i G_{n,m}^{k_{\perp}}(t, t')=\frac{1}{\hbar}\langle T_c[\hat{c}_{k_{\perp} n}(t) \hat{c}^{\dagger}_{k_{\perp} m}(t')]\rangle \] - Phonon Green's function: \[ i D_{\nu,\mu}^{q_{\perp}}(t, t')=\frac{1}{\hbar}\langle T_c[(\hat{a}_{q_{\perp} \nu}(t)+\hat{a}^{\dagger}_{-q_{\perp} \nu}(t))(\hat{a}^{\dagger}_{q_{\perp} \mu}(t')+\hat{a}_{-q_{\perp} \mu}(t'))]\rangle \] #### Methods - **Material parameter extraction**: Use the QUANTUM ESPRESSO DFT code to extract the electron band energy, phonon energy, and electron - phonon matrix elements of MoS₂. - **Device simulation**: Combine the extracted matrix elements into a device Hamiltonian and use the ATOMOS quantum transport solver to perform Fourier transform in the mixed space.

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