Extended T2 times of shallow implanted NV in chemically mechanically polished diamond

S. Tyler,J. Newland,P. Hepworth,A. Wijesekara,I. R. Gullick,M. L. Markham,M. E. Newton,B. L. Green
2024-05-18
Abstract:Mechanical polishing of diamond is known to be detrimental to the spin lifetime and strain environment of near-surface defects. By utilising a chemical mechanical polishing (CMP) process, we demonstrate that we can achieve 13C-limited spin lifetimes of shallow implanted (<34 nm) NV centres in an industrially scalable process. We compare spin lifetimes (T2) of three diamonds processed with CMP with one processed by inductively-coupled plasma reactive ion etching (ICP-RIE), and observe an increased median T2 of 355 microseconds in the CMP-processed samples for 15NV centres implanted and annealed under identical conditions.
Applied Physics,Materials Science
What problem does this paper attempt to address?
This paper mainly discusses how to solve the problem of extending the spin lifetime (T2) of shallowly implanted Nitrogen-Vacancy (NV) centers in diamond during Chemical Mechanical Polishing (CMP) treatment. NV centers are crucial for quantum technology applications, but surface defects and damages can reduce their spin lifetime. Traditional mechanical polishing methods can cause subsurface damages, affecting the performance of NV centers. By using the CMP process, the researchers demonstrated that the spin lifetime of NV centers restricted by 13C can be achieved, and this process is industrially scalable. Compared with diamond samples treated with Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE), the average spin lifetime of 15NV centers in CMP-treated samples increased by 355 microseconds. In the paper, the researchers compared the spin lifetimes of diamond samples using different treatment methods, including CMP and ICP-RIE. The CMP process utilizes an oxidizing slurry to soften the diamond surface, followed by mechanical grinding to remove material, reducing direct damage to the diamond. In the study, CMP-treated samples showed significant improvements in the spin lifetime of NV centers implanted near the surface, indicating that CMP is a possible method for producing low-damage surfaces. The experimental results showed that CMP-treated samples have longer average spin lifetimes for NV centers at all implantation depths, approaching the lifetime restricted by 13C nuclear spin bath, which is the longest lifetime in naturally abundant materials. This suggests that the CMP process can reduce limitations on the performance of NV quantum technology applications. In conclusion, the paper attempts to address the problem of how to extend the spin lifetime of shallowly implanted NV centers by improving diamond surface treatment techniques, especially using CMP, to enhance their performance in quantum technology and sensor applications.